Product Datasheet Search Results:
3 Pages, 119 KB, Scan- AT6000
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600001
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600010
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600011
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600015
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
3 Pages, 119 KB, Scan- AT600020
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600021
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600031
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600083
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT600084
- Advanced Semiconductor, Inc.
- C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
3 Pages, 119 KB, Scan- AT6000A01
- Advanced Semiconductor, Inc.
- C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
Product Details Search Results:
Advancedsemiconductor.com/AT6000
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Sh...
1308 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600001
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1600","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Con...
1308 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600010
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1272 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600011
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1272 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600015
{"Status":"ACTIVE","Package Body Material":"GLASS","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1600","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configura...
1310 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600020
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1269 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600021
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number...
1277 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600031
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1269 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600083
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1270 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT600084
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1272 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT6000A
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Sh...
1314 Bytes - 18:44:48, 15 January 2025
Advancedsemiconductor.com/AT6000A01
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1700","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Con...
1313 Bytes - 18:44:48, 15 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DATA_SHEET_ACCUTRAK_AT600_COMPACT_MAGNETOSTRICTIVE_LEVEL_TRANSMITTER.pdf | 0.25 | 1 | Request |
