Power MOSFETs
1
Publication date: March 2004 SJG00037AED
2SK3494
N-channel enhancement mode MOSFET
■Features
•Low on-resistance, low Qg
•High avalanche resistance
■Applications
•For PDP
•For high-speed switching
■Absolute Maximum Ratings TC = 25°C
■Electrical Characteristics TC = 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Drain-source surrender voltage VDSS 250 V
Gate-source surrender voltage VGSS ±30 V
Drain current ID20 A
Peak drain current IDP 80 A
Avalanche energy capability *EAS 657 mJ
Power dissipation PD50 W
Ta = 25°C 1.4
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
0 to 0.5
123
(8.9)
(10.2)
0 to 0.3
(2.1) (6.4) (1.4)
10.5±0.3 4.6±0.2
1.4±0.1
0.8±0.1 2.5±0.2
1.4±0.1
2.54±0.3
10.1±0.33.0±0.5
(1.4)
1.5±0.3
0.6±0.1
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Note) *: L = 2.79 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C
Marking Symbol: K3494
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 250 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V
Drain-source cutoff current IDSS VDS = 200 V, VGS = 010µA
Gate-source cutoff current IGSS VGS = ±30 V, VDS = 0 ±1µA
Drain-source ON resistance RDS(on) VGS = 10 V, ID = 10 A 82 105 mΩ
Forward transfer admittance YfsVDS = 10 V, ID = 10 A 7 14 S
Short-circuit forward transfer capacitance
Ciss VDS = 25 V, VGS = 0, f = 1 MHz 2
450 pF
(Common-source)
Short-circuit output capacitance Coss 356 pF
(Common-source)
Reverse transfer capacitance Crss 40 pF
(Common-source)
Turn-on delay time td(on) VDD ≈ 100 V, ID = 10 A 36 ns
Rise time TrRL = 10 Ω, VGS = 10 V 20 ns
Turn-off delay time td(off) 184 ns
Fall time tf29 ns
2SK3494
2SJG00037AED
Safe operation area PC Ta
Drain current I
D
(A)
Drain-source voltage V
DS
(V)
10
−1
10
−2
10
1
100
1 000
1 10 100 1 000
I
DP
I
D
D
C
t
=
100 µs
t =
1 ms
t =
10 ms
Non repetitive pulse
T
C
= 25°C
100
50
005025 10075 125 150
Ambient temperature Ta (°C)
Collector power dissipation P
C
(W)
(1)
(2)
(1) T
C
= T
a
(2) Without heat sink
Parameter Symbol Conditions Min Typ Max Unit
Diode foward voltage VDSF IDR = 20 A, VGS = 0 −1.5 V
Reverse recovery time trr L = 230 µH, VDD = 100 V 142 ns
Reverse recovery charge Qrr IDR = 10 A, di/dt = 100 A/µs 668 nC
Gate charge load QgVDD = 100 V, ID = 10 A 41 nC
Gate-source charge Qgs VGS = 10 V 8.4 nC
Gate-drain charge Qgd 14 nC
Thermal resistance (ch-c) Rth(ch-c) 2.5 °C/W
Thermal resistance (ch-a) Rth(ch-a) 89.2 °C/W
■Electrical Characteristics (continued) TC = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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and semiconductors described in this material
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tions satisfy your requirements.
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2003 SEP
