Product Datasheet Search Results:

934006620112.pdf12 Pages, 83 KB, Original
934006620112
Nxp
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934006630112.pdf13 Pages, 74 KB, Original
934006630112
Nxp
2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934006640112.pdf16 Pages, 79 KB, Original
934006640112
Nxp
VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934006660112.pdf12 Pages, 70 KB, Original
934006660112
Nxp
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Product Details Search Results:

Nxp.com/934006620112
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Moun...
1464 Bytes - 00:47:16, 17 February 2025
Nxp.com/934006630112
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Moun...
1463 Bytes - 00:47:16, 17 February 2025
Nxp.com/934006640112
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"13 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connectio...
1436 Bytes - 00:47:16, 17 February 2025
Nxp.com/934006660112
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"65 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Con...
1437 Bytes - 00:47:16, 17 February 2025

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