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DATA SH EET

Product speciﬁcation

Supersedes data of September 1992 1996 Oct 02

DISCRETE SEMICONDUCTORS

BLF346

VHF power MOS transistor

1996 Oct 02 2

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

FEATURES

•High power gain

•Easy power control

•Good thermal stability

•Gold metallization ensures excellent reliability.

APPLICATIONS

•Linear amplifier applications in Television transmitters

and transposers.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS

transistor encapsulated in a 6-lead, SOT119 ﬂange

package, with a ceramic cap. All leads are isolated from

the ﬂange. A marking code, showing gate-source voltage

(VGS) information is provided for matched pair

applications. Refer to the General Section of Data

Handbook SC19a for further information.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING-SOT119

PIN SYMBOL DESCRIPTION

1 s source

2 s source

3 g gate

4 d drain

5 s source

6 s source

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM268

QUICK REFERENCE DATA

RF performance in a linear ampliﬁer.

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak synchronization level.

MODE OF

OPERATION f

(MHz) VDS

(V) ID

(A) Th

(°C) PL

(W) GP

(dB) dim

(dB) (1)

Class-A 224.25 28 3 70 >24 >14 −52

25 typ. 30 typ. 16.5 −52

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1996 Oct 02 3

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDSS drain-source voltage −65 V

VGSS gate-source voltage −±20 V

IDDC drain current −13 A

Ptot total power dissipation up to Tmb =25°C−130 W

Tstg storage temperature −65 150 °C

Tjjunction temperature −200 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction to

mounting base Tmb =25°C; Ptot = 130 W 1.35 K/W

Rth mb-h thermal resistance from mounting

base to heatsink Tmb =25°C; Ptot = 130 W 0.2 K/W

Fig.2 DC SOAR.

(1) Current is this area may be limited by RDSon.

(2) Tmb =25°C.

handbook, halfpage

10−1102

110

(1)

(A)

VDS (V)

MRA931

(2)

Fig.3 Power derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0 50 100 150

200

150

100

MGG104

Ptot

(W)

Th (°C)

(1)

(2)

1996 Oct 02 4

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage VGS = 0; ID=50mA 65 −−V

DSS drain-source leakage current VGS = 0; VDS =28V −−2.5 mA

IGSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA

GSth gate-source threshold voltage VDS =10V; I

D=50mA 2 −4.5 V

∆VGS gate-source voltage difference

of matched pairs VDS =10V; I

D=50mA −−100 mV

gfs forward transconductance VDS =10V; I

D=5A 3 4.2 −S

DSon drain-source on-state resistance VGS = 10 V; ID=5A −0.2 0.3 Ω

IDSX on-state drain current VGS = 10 V; VDS =10V −22 −A

Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −225 −pF

Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −180 −pF

Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −25 −pF

Fig.4 Temperature coefficient of gate-source voltage

as a function of drain current; typical values.

VDS =10V.

handbook, halfpage

−6

−2

−4

MGG105

10−210−1110

T.C.

(mV/K)

ID (A)

Fig.5 Drain current as a function of gate-source

voltage; typical values.

VDS = 10 V; Tj=25°C.

handbook, halfpage

0 5 10 20

MGG106

VGS (V)

(A)

1996 Oct 02 5

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

Fig.6 Drain-source on-state resistance as a function

of junction temperature; typical values.

ID= 5 A; VGS =10V.

handbook, halfpage

340

280

220

160 30 150

MGG107

60 90 120

RDS on

(mΩ)

Tj (°C)

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values.

VGS = 0; f = 1 MHz.

200

400

600

800

010203040

(pF)

Cis

Cos

(V)VDS

MRA930

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values.

VGS = 0; f = 1 MHz.

handbook, halfpage

01020 40

300

100

200

MGG108

30 VDS (V)

Crs

(pF)

1996 Oct 02 6

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

APPLICATION INFORMATION

RF performance in a linear ampliﬁer (common source class-A circuit).

Rth mb-h = 0.2 K/W; ZL= 1.1 + j0.2 Ωunless otherwise speciﬁed.

Note

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak synchronization level.

Ruggedness in class-A operation

The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the

following conditions: VDS = 28 V; f = 225 MHz at rated output power.

MODE OF

OPERATION f

(MHz) VDS

(V) ID

(A) Th

(°C) Po sync

(W) GP

(dB) dim

(dB) (1)

Class-A 224.25 28 3

70 > 24 > 14 −52

25 typ. 30 typ. 16.5 −52

70 typ. 20 typ. 14.5 −55

25 typ. 22 typ. 15 −55

Fig.9 Intermodulation distortion as a function of

peak synchronized output power.

handbook, halfpage

0 10203040

−50

−70

−55

MGG109

−65

−60

dim

(dB)

Po sync (W)

(1) (2)

(1) Th=70°C.

(2) Th=25°C.

1996 Oct 02 7

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

Fig.10 Test circuit for class-A operation at f = 225 MHz.

handbook, full pagewidth

MGG113

DUT

L6 C13

C12

C11 C15

C14

C10

L4 L7

L2 L3

C4C2

BLF346

50 Ω

output

C16

50 Ω

input

L1 L5

VDS

1996 Oct 02 8

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

List of components (see Figs 10 and 11).

Notes

1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board with epoxy fibre-glass dielectric (εr= 4.5); thickness

1⁄16 inch.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1 ﬁlm dielectric trimmer 2 to 18 pF 2222 809 09003

C2 multilayer ceramic chip capacitor

(note 1) 10 pF, 500 V

C3, C15, C16 ﬁlm dielectric trimmer 4 to 40 pF 2222 809 08002

C4, C5 multilayer ceramic chip capacitor

(note 1) 56 pF, 500 V

C6, C12 multilayer ceramic chip capacitor

(note 1) 680 pF, 500 V

C7, C8, C9 multilayer ceramic chip capacitor 100 nF, 50 V 2222 852 47104

C10, C11 multilayer ceramic chip capacitor

(note 1) 43 pF, 500 V

C13 electrolytic capacitor 10 µF, 63 V 2222 030 38109

C14 multilayer ceramic chip capacitor

(note 1) 27 pF, 500 V

L1 4 turns enamelled 0.7 mm copper

wire 42.4 nH length 4 mm;

int. dia. 3 mm;

leads 2 ×5mm

L2 stripline (note 2) 50 Ωlength 49 mm;

width 2.8 mm

L3, L4 stripline (note 2) 31 Ωlength 11.5 mm;

width 6 mm

L5 2 turns enamelled 1.5 mm copper

wire 18.7 nH length 8 mm;

int. dia. 4 mm;

leads 2 ×5mm

L6 grade 3B Ferroxcube RF choke 4312 020 36642

L7 stripline (note 2) 31 Ωlength 40 mm;

width 6 mm

L8 3 turns enamelled 1.5 mm copper

wire 28.8 nH length 8 mm;

int. dia. 4 mm;

leads 2 ×5mm

R1 metal ﬁlm resistor 1 kΩ, 0.4 W 2322 151 71002

R2 metal ﬁlm resistor 100 kΩ, 0.4 W 2322 151 71004

R3 10 turns cermet potentiometer 100 Ω

R4 metal ﬁlm resistor 316 kΩ, 0.4 W 2322 153 53161

R5 metal ﬁlm resistor 10 Ω, 0.4 W 2322 153 51009

1996 Oct 02 9

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

Fig.11 Component layout for 225 MHz class-A test circuit.

The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth

connections are made by means of copper straps and hollow rivets.

handbook, full pagewidth

strap

rivet

mounting

screws

(8×)

L3 L4

L1 L8

L2 L7

C16

C15

C14

C5 C11

C10

R2 C8 C9

C12

C13

R3 +VDS

150

MGG114

1996 Oct 02 10

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

Fig.12 Input impedance as a function of frequency

(series components); typical values.

Class-A operation; VDS = 28 V; ID= 3 A; PL= 30 W; Th=70°C.

handbook, halfpage

160 180 200 220 240

−6

−4

−2

MGG110

(Ω)ri

f (MHz)

Fig.13 Load impedance as a function of frequency

(series components); typical values.

Class-A operation; VDS = 28 V; ID= 3 A; PL= 30 W; Th=70°C.

handbook, halfpage

160 180 200 220 240

MGG111

(Ω)

f (MHz)

Fig.14 Definition of MOS impedance.

handbook, halfpage

MBA379

ZiZL

Fig.15 Power gain as a function of frequency;

typical values.

Class-A operation; VDS = 28 V; ID= 3 A; PL= 30 W; Th=70°C.

handbook, halfpage

160 180 200 220 240

MGG112

f (MHz)

(dB)

1996 Oct 02 11

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

PACKAGE OUTLINE

Fig.16 SOT119.

Dimensions in mm.

handbook, full pagewidth

MBC877

0.14

max

ceramic

BeO

metal

18.42

25.2

max

12.2

4.50

4.05 7.5

max

2.5

5.5

5.0

6.48

12.96

3.35

3.04 (2x)

3.8

min

5.7

5.3

5.7

5.3

min

6.35

22 max

1996 Oct 02 12

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1996 Oct 02 13

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

NOTES

1996 Oct 02 14

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

NOTES

1996 Oct 02 15

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF346

NOTES

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Printed in The Netherlands 127041/1200/04/pp16 Date of release: 1996 Oct 02 Document order number: 9397 750 01114