Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 300 V / 600 V / 800 V
• High thermal cycling performance
• Low thermal resistance VF ≤ 1.05 V
IF(AV) = 7 A
IFSM ≤ 60 A
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Glass-passivated double diffused PIN DESCRIPTION
rectifier diodes. The devices are
intended for low frequency power 1 cathode
rectifier applications. 2 anode
The BY249 series is supplied in the
conventional leaded SOD59 tab cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX.UNIT UNIT
BY249 -300 -600 -800
VRSM Peak non-repetitive reverse - 300 600 800 V
voltage
VRRM Peak repetitive reverse - 300 600 800 V
voltage
VRWM Crest working reverse voltage - 200 500 700 V
VRContinuous reverse voltage - 200 500 700 V
IF(AV) Average forward current1sinusoidal; a = 1.57; Tmb ≤ 131 ˚C - 7 A
IF(RMS) RMS forward current - 11 A
IFRM Peak repetitive forward sinusoidal; a = 1.57; - 60 A
current
IFSM Peak non-repetitive forward t = 10 ms - 60 A
current. t = 8.3 ms - 66 A
sinusoidal; Tj = 150 ˚C prior to
surge; with reapplied VRWM(max)
I2tI
2t for fusing t = 10 ms - 18 A2s
Tstg Storage temperature -40 150 ˚C
TjOperating junction - 150 ˚C
temperature
k a
12
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 2.0 K/W
mounting base
Rth j-a Thermal resistance junction to in free air. - 60 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 20 A - 1.2 1.6 V
IF = 5 A; Tj = 100 ˚C - 0.9 1.05 V
IRReverse current VR = VRWM; Tj = 125 ˚C - 0.1 0.4 mA
September 1998 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square wave where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150˚C prior
to surge with reapplied V
RWM
.
Fig.4. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.5. Transient thermal impedance Z
th
= f(t
p
)
024681012
0
5
10
15 D = 1.0
0.5
0.2
0.1
BY249
IF(AV) / A
PF / W Tmb(max) / C
150
140
130
120
Rs = 0.0200 Ohms
Vo = 1.0120 V
D =
t
p
t
p
T
T
t
I
1ms 10ms 0.1s 1s 10s
tp / s
IFS(RMS) / A BY229
80
70
60
50
40
30
20
10
0
IFSM
0 2 4 6 8
BY249
IF(AV) / A
PF / W
15
10
5
0
a = 1.57
1.9
2.2
2.8
4
Tmb(max) / C
150
140
130
120
Vo = 1.012 V
Rs = 0.02 Ohms
0 1 2
BY249
VF / V
IF / A
30
20
10
0 0.5 1.5
typ max
Tj = 100 C
Tj = 25 C
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BY229
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
September 1998 3 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.6. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
0,9 max (2x)
13,5
min
5,08
12
September 1998 4 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BY249 series
general purpose
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998 5 Rev 1.300
