Product Datasheet Search Results:
4 Pages, 729 KB, Original- 4N32A
- Motorola / Freescale Semiconductor
- Phototransistor, NPN Phototransistor And PN Infrared Emitting Diode
6 Pages, 242 KB, Scan- 4N32A
- General Electric Solid State
- Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-darlington amplifier.
3 Pages, 632 KB, Scan- 4N32A
- General Electric
- Semiconductor Data Handbook 1977
1 Pages, 87 KB, Scan- 4N32A
- Spectronics
- Product Data Book (Shortform)
Product Details Search Results:
Freescale.com/4N32AF
{"Package":"SO","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"250m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"500","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"2.5k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5.0u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...
966 Bytes - 19:19:37, 24 October 2024
Freescale.com/4N32AR
{"Package":"DIP-BL","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"250m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"500","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"1.8k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5.0u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...
969 Bytes - 19:19:37, 24 October 2024
Freescale.com/4N32AS
{"Package":"SO","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"250m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"500","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"1.8k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5.0u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...
966 Bytes - 19:19:37, 24 October 2024
Freescale.com/4N32AT
{"Package":"DIP","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"250m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"500","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"1.8k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5.0u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...
967 Bytes - 19:19:37, 24 October 2024
Optekinc.com/4N32ASMA
{"P(D) Max.(W) Power Dissipation":"150m","CTR Min.(%)Current Trans.Ratio":"500","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"100m","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","Package":"FP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"30","@I(F) (A) (Test Condition)":"10m","Viso Max.(V) Isolation Voltage":"2.5k","I(F) Max. (A) Forward Current":"80m","Semiconductor Material":"GaAs : Si","I(CEO) Max. (A) Dark Out.Cur...
1033 Bytes - 19:19:37, 24 October 2024
Optekinc.com/4N32ASMB
{"Package":"FP","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"150m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"500","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"80m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"2.5k","I(C) Abs.(A) Collector Current":"100m","Semiconductor Material":"GaAs : Si","t(resp) Max.(s) Response Time":"100u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...
1009 Bytes - 19:19:37, 24 October 2024
Toshiba.co.jp/4N32A(LF1)
{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"500 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...
1208 Bytes - 19:19:37, 24 October 2024
Toshiba.co.jp/4N32A(LF2)
{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"500 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...
1210 Bytes - 19:19:37, 24 October 2024
Toshiba.co.jp/4N32A(LF4)
{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"500 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...
1212 Bytes - 19:19:37, 24 October 2024
Toshiba.co.jp/4N32A(LF5)
{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"500 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...
1208 Bytes - 19:19:37, 24 October 2024
Toshiba.co.jp/4N32A(TP1)
{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"500 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...
1212 Bytes - 19:19:37, 24 October 2024
Toshiba.co.jp/4N32A(TP4)
{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"500 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...
1210 Bytes - 19:19:37, 24 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| VNB504A-N32A.pdf | 0.64 | 1 | Request | |
| VNA501A-N32A.pdf | 0.70 | 1 | Request | |
| VNB504B-N32A.pdf | 0.64 | 1 | Request | |
| VNB504BS-N32A.pdf | 0.64 | 1 | Request | |
| VNB514B-N32A-5DZ.pdf | 0.64 | 1 | Request | |
| VNB501B-N32A.pdf | 0.64 | 1 | Request | |
| VND500D-N32A.pdf | 0.78 | 1 | Request | |
| VNB504AS-N32A.pdf | 0.64 | 1 | Request | |
| VNB501C-N32A.pdf | 0.64 | 1 | Request | |
| VNC511A-N32A-5DZ.pdf | 1.60 | 1 | Request | |
| VNB501BS-N32A.pdf | 0.64 | 1 | Request | |
| VNB501AL-N32A.pdf | 0.64 | 1 | Request |
