NPN PHOTOTRANSISTOR AND PN INFRARED
EMITTING DIODE
...Gallium Arsenide LED optically coupled to aSilicon Photo
Darlington Transistor designed for applications requiring electrical,
isolation, high-current transfer ratios, small package size and low
cost; such as interfacing and coupling systems, phase and feedback
controls, solid-state relays and general-purpose switching circuits.
@High Isolation Voltage eExcellent’ FrequencV Responw —
VISO =7500 V(Min) 30 kHz (TYP)
0High Collector Output Current eFast Switching Times @Ic =50 mA
@l F=l OmA– ton =0.6us (TvP)
IC =50 mA (Min) –4N32,33 toff =17 US (Tvp) –4N29,30,31
10 mA (Min) –4N29,30 45 US (TvP) –4N32,33
5.0 mA (Min) –4N31
eEconomical, Compact, 84N29A, 4N32A are UL Recognized —
Dual-In-Line Package File Number E,54915 ,3$
4N29,4H29A
4H30
4H31
4N32.4N324
MAXIMUM RATINGS (TA =25°C unless otherwise noted) .,
/<7” ,+
INFRARED-EMITTING DIODE MAXIMUM RATINGS
Reverse Voltage VR . ... -,- >,....,.4%\\
Forward Current –Continuous IF ~J~&:[ mA L
Forward Current –Peak IF 3.0%’’’”
IAmp
(Pulse Width =300 YS, 2.0% Duty Cycla) I,.\\!
,,!- 1
Total Power Dissipation @TA =25°C PD +,:’ ‘~ai, 150 mW
Negligible Power in Transistor ,,,
Derate above 25°C 2.0 mW/°C
PHOTOTRANSISTOR MAXIMUM.RATING6 ,&W:xi!a:y
Collector-Emitter Voltage ‘‘Y:&{$$;E O
.}.,?~~“.}~>,h 30 volts
Emitter-Collector Voltage .$,,.
~:i:\. VECO 5.0 volts
....~,:i.‘?.~.i .$>,’
Collector-Base Voltage ,, ,~
‘~}. ;.$ Vcgo 30 volts
-’
Total Powar Dissipation @TA =25$~’’*$%’’’’”” pQ
.. 150 mW
Negligible Power in Diode ,,. -ts~.,i~,$l?’
.’,~~~:,?..
,:,{:~”
Derate above 25°C ~,.!f.,
\*.\i\+:>.~,~$j., 2.0 mWl°C
TOTAL DEVICE RATl~$$$ 3“
Total Device Dissipa:~$,6’$~ =25°C pD 250 mW
Equal Power Diss~*$in Each Element
Derate abov<a ~~:~~ 3.3 mW/°C
operating ~~c}$~~ temperature Range TJ -55 to+100 Oc
Tstg -55to +150 Oc
So(d>;F#~emperature (10 s) —260 Oc
r.. ....
?~4 FIGURE 1 – MAXIMUM POWER DISSIPATION
Figure 1is based upon using limit
160 values in the equation:
z~
~140—~—~TJI -TA =R8JA (PD1 +Kg PD2}
(A =~~o~
5~ ~
~!20-where:
\
.TJt Junction Temperature (10O°C)
~
%100 .— TA Amtient Temperature
z~ROJA Junction to Ambient Thermal
~80
:
\ \
Resistance (5000C/W}
:60 P~, Power Dissipation in One Chip
g~_,5o~ PD2 pOWer Dissipation in Other Chip
:40 \
\\
KO Thermal Coupling Coefficient
<
g20 I20%t
m\Example:
o0With PD1 =90 mW in the LED
20 a 60 80 I00 120 140
PD2. AVEBAGE POWER DISSIPATIONimWl lsO @TA =50° C, the Darlingttin
PD (pD2) ,musr be less than 50 mW.
D
654
STYLE 1:
PIN 1. ANODE
2. CATHOOE
o3. NC
4. EMITTER
5. COLLECTOR
+lG& 6. BASE
NOTES: PLANE
1. LEADS WITHIN 0.25 mm (0.010)
OIAMETER OF TRUE POSITION
AT SEATING PLANE AT
MAXIMUM MATERIAL
CONOITION.
2. OIMENSION “L” TO CENTER OF ..
CASE 730-01
MOTOROLA INC 1977 DS 2627 f