NPN PHOTOTRANSISTOR AND PN INFRARED
EMITTING DIODE
...Gallium Arsenide LED optically coupled to aSilicon Photo
Darlington Transistor designed for applications requiring electrical,
isolation, high-current transfer ratios, small package size and low
cost; such as interfacing and coupling systems, phase and feedback
controls, solid-state relays and general-purpose switching circuits.
@High Isolation Voltage eExcellent’ FrequencV Responw —
VISO =7500 V(Min) 30 kHz (TYP)
0High Collector Output Current eFast Switching Times @Ic =50 mA
@l F=l OmA– ton =0.6us (TvP)
IC =50 mA (Min) –4N32,33 toff =17 US (Tvp) –4N29,30,31
10 mA (Min) –4N29,30 45 US (TvP) –4N32,33
5.0 mA (Min) –4N31
eEconomical, Compact, 84N29A, 4N32A are UL Recognized —
Dual-In-Line Package File Number E,54915 ,3$
4N29,4H29A
4H30
4H31
4N32.4N324
MAXIMUM RATINGS (TA =25°C unless otherwise noted) .,
/<7” ,+
INFRARED-EMITTING DIODE MAXIMUM RATINGS
Reverse Voltage VR . ... -,- >,....,.4%\\
Forward Current –Continuous IF ~J~&:[ mA L
Forward Current –Peak IF 3.0%’’’”
IAmp
(Pulse Width =300 YS, 2.0% Duty Cycla) I,.\\!
,,!- 1
Total Power Dissipation @TA =25°C PD +,:’ ‘~ai, 150 mW
Negligible Power in Transistor ,,,
Derate above 25°C 2.0 mW/°C
PHOTOTRANSISTOR MAXIMUM.RATING6 ,&W:xi!a:y
Collector-Emitter Voltage ‘‘Y:&{$$;E O
.}.,?~~“.}~>,h 30 volts
Emitter-Collector Voltage .$,,.
~:i:\. VECO 5.0 volts
....~,:i.‘?.~.i .$>,’
Collector-Base Voltage ,, ,~
‘~}. ;.$ Vcgo 30 volts
-’
Total Powar Dissipation @TA =25$~’’*$%’’’’”” pQ
.. 150 mW
Negligible Power in Diode ,,. -ts~.,i~,$l?’
.’,~~~:,?..
,:,{:~”
Derate above 25°C ~,.!f.,
\*.\i\+:>.~,~$j., 2.0 mWl°C
TOTAL DEVICE RATl~$$$ 3“
Total Device Dissipa:~$,6’$~ =25°C pD 250 mW
Equal Power Diss~*$in Each Element
Derate abov<a ~~:~~ 3.3 mW/°C
operating ~~c}$~~ temperature Range TJ -55 to+100 Oc
Tstg -55to +150 Oc
So(d>;F#~emperature (10 s) —260 Oc
r.. ....
?~4 FIGURE 1 – MAXIMUM POWER DISSIPATION
Figure 1is based upon using limit
160 values in the equation:
z~
~140—~—~TJI -TA =R8JA (PD1 +Kg PD2}
(A =~~o~
5~ ~
~!20-where:
\
.TJt Junction Temperature (10O°C)
~
%100 .— TA Amtient Temperature
z~ROJA Junction to Ambient Thermal
~80
:
\ \
Resistance (5000C/W}
:60 P~, Power Dissipation in One Chip
g~_,5o~ PD2 pOWer Dissipation in Other Chip
:40 \
\\
KO Thermal Coupling Coefficient
<
g20 I20%t
m\Example:
o0With PD1 =90 mW in the LED
20 a 60 80 I00 120 140
PD2. AVEBAGE POWER DISSIPATIONimWl lsO @TA =50° C, the Darlingttin
PD (pD2) ,musr be less than 50 mW.
D
654
STYLE 1:
PIN 1. ANODE
2. CATHOOE
o3. NC
4. EMITTER
5. COLLECTOR
+lG& 6. BASE
NOTES: PLANE
1. LEADS WITHIN 0.25 mm (0.010)
OIAMETER OF TRUE POSITION
AT SEATING PLANE AT
MAXIMUM MATERIAL
CONOITION.
2. OIMENSION “L” TO CENTER OF ..
CASE 730-01
MOTOROLA INC 1977 DS 2627 f
,-
LED CHARACTERISTICS (TA =25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
*Reverse Leakage Current IR 0.05 100 MA
(VR =3.0 V, RL =1.0 Mohms)
*Forward Voltage v~ 1.2 1.5 volts
(IF =50 mA)
Capacitance c150
(VR=OV, f=l.O MHz)
pF
;PHOTOTRANSISTOR CHARACTERISTICS (TA =25°C and I~ = ounless otherwise noted)
.
Characteristic Symbol Min Typ Max Unit
*Collector-Emitter Dark Current IcEO
(VCE =10 V, Base Open)
100 ntii~t,
:i?$$l<.:!,,.+::’<,.
.,,:. r,.
*Collactor-Base Breakdown Voltage BVcBO 30 <“*?$
(lC=l OO#A,lE=O) *’J.,, .*<j:,L\$&;:?
.,,., ‘~$,.,
*Collector-Emitter Breakdown Voltage BVcEO 30 L,.’
.,~,*.?i
—t>~+~~.,,,$.:l. volts
(ic= IOOPA, IB=O)
—~,,.,,i. ~$y
.ky:,,$><~\.i..>
*Emitter-Collector Breakdown Voltage BVECO 5.0 ,,,s
.,;{t~>t:<+\:&:,&y volts
(I E= IOOPA, IB=O)”
—,}.~ ,, .
.i$!* :\:)
DC Current Gain ~.,++,.,ii’
hFE —500,$>.”: ,,’–
(VCE =5.0 V, IC.= 500 PA)
—
,.,.,,
.,, .&. “;:$
.,,’.~.*\\i..$,,t,
COUPLED CHARACTERISTICS (TA =25°C unless otherwise noted) >.,. .... ...<
,:**$
>>,>l.l\\”*
,<!,
‘~il..*.*,,,~
rCharacteristic ISymbol Min :@:[;:&fyp IMax
*Collector Output Current (1) 4N32, 4N33 Ic I%?> ‘... _—
(VCE=l OV, IF= MA, IB=O 4N29, 4N30 ,i,:,:~p:i:i.v:
4N31 ~, “*@
..
Isolation Surge Voltage (2, 5) Vlso xi: :,, {{?,>A2?’
(60 HZ ac Paak, 5Seconds) .-a~
i’.’
i>..7500
.4,.,
*4N29, 4N32 ‘“’” 2500
●4N30, 4N31 ,4N33 1500
Isolation Resistance (2) —
(v= 500 v)
*Collector-Emitter Saturation Voltage (1) 4N31 ‘i*s\$ VCE(Sat) –
{ic= 2.O mA, IF ‘8.OmA) 4N29, 4N39, 4N32, 4N33 .,$ —
Isolation Capacitance (2) *l*?:,;*>
I,_
4
—
——
—
1011 —
—1.2
—1.0
0.8 —
7
Unit
mA
volts
(1) Pulse Test: Pulse Wid4’$@300 is, Dutv Cycle <2.0%.
(2) For this test, LED ~~~$$~$@#d2are common and phototransistor pins 4, 5, and 6are common.
(3) IF adjustad to ~$1~,~~,= 2.0 mA and i= =2.0 mA P-P at 10 kHz.
(4) td and tr are i~V%,elYprOpOrtiOna! tO the amplitude Of IF; ts and tf are nOt Significantly affected bv IF.
,$~t,.
(5) Isolation ~gg,~ ,&Wage, VISO, is en internal davice dielectric breakdown rating.
3
Ohms
volts
pF
kHz
*&RwARDD’ooEcuRRENT{mA)
IF,FORWAROOIOOECUBRENT(mA]
MOTOROLA Semiconductor PrOdue*s fnc. —
TYPICAL ELECTRICAL CHARACTERISTICS
(Printed Circuit Board Mounting)
FIGURE 4 – DIODE FORWARD CHARACTERISTIC
3.0 5.0 10 20 30 50 100 200300 500 1.0 k2.0 k3.0 k
iF, INSTANTANEOUS FORWARO CURRENT (mA)
FIGURE 6 – FREQUENCY RESPONSE
1-1-1rl-3 r1-1r1I1Irt! ! ~
0.7 N
IIIuIrl I I Iu I I I I I [!,!!1r1,IIr
WI Vcc=lov=
I I 1F=41C
II1ItT.I =25°C —
0.5 ,~~1~,,..::.
\.t>,...,,
0.3 ,:, 100
‘..,
0.2 50
0,1
I!11I{1 1 1 1 1 1
IIc (OC)=2,0 mA
ic (AC SINE WAVE) =2.0 mA P.P. &
I
0.2 II I 1111 I I r1 1 1 1111 11\1111111 !,
0.1 1111111 IIII
0.3 0.5 1.0 2.0 3,0 5.0 10 20 30 50 100 200300
Ic, COLLECTOR CURRENT (mAJ
FIGURE 9–SWITCHING TIME TEST CIRCUIT
N.C.
9Vcc
Q+lov
PULSE
WI OTH }=l.Oms
I
,“ ,—>,.6,”
CONTROLSIGNAL
[“
D1 60HZA CPOWER
1N4003 2N6165
~-l 1’
9L——— ——— — .,,
!,
)
FIGURE 12- OP~@ALLY COUPLED ONE SHOT
\
‘*,\ ‘.’:<,
.:s.,....\.a..x I
I
PULSE WIDTH I
I=0.5 RC
L
-4 100 k $IKt+ I
I
.tlme 49 -C”- .,-. +.---.., -----
-q MOTOROLA Semieonducfor Produce* ln~. —
. . ..-, Pri.1.d in Switzerland 21 l-J77/3.5
