Datasheet.Directory

{"Package":"SO","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"150m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"100","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"2.5k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...

{"Package":"DIP-BL","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"250m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"100","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"1.8k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5.0u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...

{"Package":"SO","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"250m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"100","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"1.8k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5.0u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...

{"Package":"DIP","@V(CE) (V) (Test Condition)":"10","P(D) Max.(W) Power Dissipation":"250m","V(BR)CEO (V) Breakdown Voltage":"30","CTR Min.(%)Current Trans.Ratio":"100","@I(F) (A) (Test Condition)":"10m","I(F) Max. (A) Forward Current":"60m","V(F) Max.(V) Forward Voltage":"1.5","Viso Max.(V) Isolation Voltage":"1.8k","I(C) Abs.(A) Collector Current":"150m","Semiconductor Material":"Si","t(resp) Max.(s) Response Time":"5.0u","Number of Channels":"1","I(CEO) Max. (A) Dark Out.Cur.":"100n"}...

{"P(D) Max.(W) Power Dissipation":"150m","CTR Min.(%)Current Trans.Ratio":"100","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"100m","t(resp) Max.(s) Response Time":"40u","Number of Channels":"1","Package":"FP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"30","@I(F) (A) (Test Condition)":"10m","Viso Max.(V) Isolation Voltage":"2.5k","I(F) Max. (A) Forward Current":"80m","Semiconductor Material":"GaAs : Si","I(CEO) Max. (A) Dark Out.Cur....

{"P(D) Max.(W) Power Dissipation":"150m","CTR Min.(%)Current Trans.Ratio":"100","V(F) Max.(V) Forward Voltage":"1.5","Status":"Discontinued","I(C) Abs.(A) Collector Current":"100m","t(resp) Max.(s) Response Time":"40u","Number of Channels":"1","Package":"FP","@V(CE) (V) (Test Condition)":"10","V(BR)CEO (V) Breakdown Voltage":"30","@I(F) (A) (Test Condition)":"10m","Viso Max.(V) Isolation Voltage":"2.5k","I(F) Max. (A) Forward Current":"80m","Semiconductor Material":"GaAs : Si","I(CEO) Max. (A) Dark Out.Cur....

{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"100 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...

{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"100 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...

{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"100 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...

{"Status":"ACTIVE","Coll-emtr Bkdn Voltage-Min":"30 V","Terminal Finish":"TIN LEAD","Mfr Package Description":"DIP-6","Operating Temperature-Min":"-55 Cel","Input Cont Forward Current-Max":"80 mA","Current Transfer Ratio-Nom":"100 %","Operating Temperature-Max":"100 Cel","Optoelectronic Device Type":"DARLINGTON OUTPUT","Isolation Voltage-Max":"2500 V","Number of Functions":"1","Collector Dark Current-Max":"100 nA","Configuration":"SINGLE"}...

{"Maximum Forward Voltage":"1.5 V","Category":"Transistor and Photovoltaic Output PhotoCouplers","Description":"Value","Package":"6PDIP","Maximum Collector Emitter Saturation Voltage":"1000 mV","Maximum Collector Emitter Voltage":"30 V","Maximum Power Dissipation":"250 mW","Number of Channels per Chip":"1","Maximum Collector Current":"100 mA","Output Type":"DC","Typical Forward Voltage":"1.15 V","Maximum Reverse Voltage":"3 V","Minimum Isolation Voltage":"2500 Vrms","Operating Temperature":"-55 to 100 \u00b...

{"Factory Pack Quantity":"50","Isolation Voltage":"2500 Vrms","Maximum Collector Emitter Saturation Voltage":"1 V","Maximum Input Diode Current":"80 mA","Input Type":"DC","Package / Case":"PDIP-6","Vr - Reverse Voltage":"3 V","Output Device":"Photodarlington","Product Category":"Transistor Output Optocouplers","If - Forward Current":"10 mA","Brand":"Toshiba","Output Type":"DC","Number of Channels":"1 Channel","Configuration":"1 Channel","Vf - Forward Voltage":"1.5 V","Manufacturer":"Toshiba","RoHS":"Details...