2 Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic Symbol Min Typ(1) Max Unit
INPUT LED
*Reverse Leakage Current (VR = 3 V, RL = 1 M ohms) IR— 0.05 100 µA
*Forward Voltage (IF = 10 mA) VF— 1.34 1.5 Volts
Capacitance (VR = 0 V, f = 1 MHz) C — 1.8 — pF
OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted)
*Collector–Emitter Dark Current
(VCE = 10 V, Base Open) ICEO — — 100 nA
*Collector–Base Breakdown Voltage
(IC = 100 µA, IE = 0) V(BR)CBO 30 — — Volts
*Collector–Emitter Breakdown Voltage
(IC = 100 µA, IB = 0) V(BR)CEO 30 — — Volts
*Emitter–Collector Breakdown Voltage
(IE = 100 µA, IB = 0) V(BR)ECO 5 — — Volts
DC Current Gain
(VCE = 5 V, IC = 500 µA) hFE — 16K — —
COUPLED (TA = 25°C unless otherwise noted)
*Collector Output Current (3) 4N32, 4N33
(VCE = 10 V, IF = 10 mA) 4N29, 4N30
4N31
IC (CTR)(2) 50 (500)
10 (100)
5 (50)
—
—
—
—
—
—
mA (%)
Isolation Surge Voltage(4,5) 4N29/A, 4N30, 31, 32, 33
(60 Hz ac Peak, 1 Second) *4N29, 4N32
*4N30, 4N31, 4N33
VISO 7500
2500
1500
—
—
—
—
—
—
Vac(pk)
Isolation Resistance(4)
(V = 500 V) RISO — 1011 — Ohms
*Collector–Emitter Saturation Voltage(3) 4N31
(IC = 2 mA, IF = 8 mA) 4N29, 4N30, 4N32, 4N33 VCE(sat) —
——
—1.2
1Volts
Isolation Capacitance(4)
(V = 0 V, f = 1 MHz) CISO — 0.2 — pF
Turn–On Time(6)
(IC = 50 mA, IF = 200 mA, VCC = 10 V) ton — 0.6 5 µs
Turn–Off Time(6)
(IC = 50 mA, IF = 200 mA, VCC = 10 V) 4N29, 30, 31
4N32, 33
toff —
—17
45 40
100
µs
*Indicates JEDEC Registered Data. All Motorola 6–pin devices have VISO rating of 7500 Vac(pk).
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle
p
2%.
4. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common.
5. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
6. For test circuit setup and waveforms, refer to Figure 11.