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2N7002L — N-Channel Enhancement Mode Field Effect Transistor
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002L Rev. 1.0.1 1
October 2014
2N7002L
N-Channel Enhancement Mode Field Effect Transistor
Features
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• Very Low Capacitance
• Fast Switching Speed
Ordering Information
Part Number Marking Package Packing Method
2N7002L 70L SOT-23 3L Tape and Reel
SOT-23
G
S
D
D
SG
Description
This N-channel enhancement mode field effect transistor
is produced using high cell density, trench MOSFET
technology. This product minimizes on-state resistance
while providing rugged, reliable and fast switching perfor-
mance. This product is particularly suited for low-voltage,
low-current applications such as small servo motor con-
trol, power MOSFET gate drivers, logic level translator,
high speed line drivers, power management/power sup-
ply, and switching applications.
2N7002L — N-Channel Enhancement Mode Field Effect Transistor
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002L Rev. 1.0.1 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference
is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is
determined by the user's board design.
Scale 1: 1 on letter size paper
ESD Rating(2)
Note:
2. ESD values are in typical, no over-voltage rating is implied, ESD CDM zap voltage is 2000 V maximum.
Symbol Parameter Value Unit
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS ≤ 1 MΩ) 60 V
VGSS Gate-Source Voltage Continuous ±20 V
Non Repetitive (tp < 50 μs) ±40
IDMaximum Drain Current Continuous 115 mA
Pulsed 800
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temperature for Soldering Purposes, 1/16 inch from Case
for 10 Seconds 300 °C
Symbol Parameter Value Unit
PD
Maximum Power Dissipation 200 mW
Derate Above 25°C1.6mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 380 °C/W
Symbol Parameter Value Unit
HBM Human Body Model per ANSI/ESDA/JEDEC JS-001-2012 50 V
CDM Charged Device Model per JEDEC C101C >2000 V
a) 380°C/W when mounted on a minimum pad.
2N7002L — N-Channel Enhancement Mode Field Effect Transistor
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002L Rev. 1.0.1 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 μA 60.0 65.2 V
IDSS Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V 0.024 1
μA
VDS = 60 V, VGS = 0 V,
TJ = 125°C0.080 500
IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 0.107 100 nA
IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -0.037 -100 nA
On Characteristics(3)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 0.80 1.81 2.50 V
RDS(ON) Static Drain-Source On-Resistance
VGS = 10 V, ID = 500 mA 3.35 7.50
Ω
VGS = 10 V, ID = 500 mA,
TJ = 100°C5.62 13.50
VGS = 5 V, ID = 50 mA 2.68 7.50
VGS = 5 V, ID = 50 mA,
TJ = 100°C3.97 13.50
VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 1.68 3.75 V
VGS = 5 V, ID = 50 mA 0.13 1.50
ID(ON) On-State Drain Current VGS = 10 V, VDS ≥ 2 VDS(ON) 500 557 mA
VGS = 4.5 V, VDS = 10 V 75 571
gFS Forward Trans-conductance VDS ≥ 2 VDS(ON),
ID = 200 mA 80 214 mS
Dynamic Characteristics
Ciss Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
12.8 50 pF
Coss Output Capacitance 3.25 25 pF
Crss Reverse Transfer Capacitance 1.52 5 pF
RGGate Resistance VGS = 0 V, f = 1.0 MHz 22.2 Ω
Switching Characteristics (3)
ton Turn-On Time
VDD = 30 V, RL = 150 Ω,
ID = 200 mA, VGS = 10 V,
RGEN = 25 Ω
4.35 20 ns
toff Turn-Off Time 15.6 20 ns
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current 115 mA
ISM Maximum Pulsed Drain-Source Diode Forward Current 0.8 A
VSD
Drain-Source Diode Forward
Voltage VGS = 0 V, IS = 115 mA(3) 0.818 1.5 V
2N7002L — N-Channel Enhancement Mode Field Effect Transistor
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002L Rev. 1.0.1 4
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Vol tage
and Drain Current
Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current
and Temperature
Figure 5. Transfer Characteristics Figure 6. Gate Threshol d Variation with Te mperature
ID, DRAIN CURRENT (A)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 1.0 2.0 3.0 4.0
VDS, DRAIN-SOURCE VOLT AGE (V)
VGS=10V
7.0
6.0
5.0
4.5 4.0
3.0
8.0
9.0
RDS(ON), NORMALIZED
DRAIN-SOUCE ON-RESISTANCE
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 0.2 0.4 0.6 0.8 1
ID, DRAIN CURRENT (A)
VGS=4.0V
6.0
4.5
6.5
5.0
10
7.0
8.0
9.0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERA TURE (oC)
ID= 0.5A
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0
0.5
1
1.5
2
2.5
3
0 0.2 0.4 0.6 0.8 1
ID, DR AIN CU RR ENT (A)
25oC
-55oC
125oC
ID, DRAIN CURRENT (A)
0.00
0.25
0.50
0.75
1.00
01234567
VGS, GATE TO SOURCE VOLTAGE (V)
125
o
C
-55oC
TJ= 150oC
V
= 10V
25
o
C
GATE-OURCE THRESHOLD VOLTAGE
Vth, NORMALIZED
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERA TURE (oC)
ID= 1mA
VGS = Vds
2N7002L — N-Channel Enhancement Mode Field Effect Transistor
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002L Rev. 1.0.1 5
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation with
Temperature Figure 8. Body Diode Forward Voltage Variation with
Source Current and Temperature
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Figure 12. Switching Waveforms
DRAIN-SOURCE BREAKDOWN VOLTAGE
BVDSS, NORMALIZED
0.9
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
1.125
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERA TURE (oC)
ID= 250uA
IS, REVERSE DRAIN CURRENT (A)
0.001
0.01
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOL TAGE (V)
TJ= 125oC
25oC-55oC
VGS = 0V
CAPACITANCE (pF)
1
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAG E (V)
Ciss
C
rss
C
oss
f = 1MHz
VGS = 0V
VGS, GATE-SOURCE VOLTAGE (V)
Qg, Gate Charge (nC)
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Id=500mA
280mA
115mA
2N7002L — N-Channel Enhancement Mode Field Effect Transistor
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002L Rev. 1.0.1 6
Typical Performance Characteristics (Continued)
Figure 13. Maximum Safe Operating Area
Figure 14. Transient Thermal Response Curve
0.001
0.01
0.1
1
0.01 0.1 1 10 100
VDS, DRAIN- SOURCE VOL TAGE (V)
DC
10s
1s
100ms
RDS(ON) LIMIT
SINGLE PULSE
RJA = 380oC/W
TA= 25oC
10ms
1ms
100 s
200
ID, DRAIN CURRENT (A)
θ
μ
Normalized Thermal Impedance ZoJA
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
t, Rectangular Pulse Duration
TRANSIENT THERMAL IMPEDANCE
Single Pulse
0.01
0.02
0.05
0.1
0.2
0.5
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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