Product Datasheet Search Results:
4 Pages, 268 KB, Original- 2SK3676-01S
- Fuji Electric
- 2SK3676-01S
4 Pages, 268 KB, Original- 2SK3676-01SJ
- Fuji Electric
- 2SK3676-01SJ
Product Details Search Results:
Fujielectric.co.jp/2SK3676-01S
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"244 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1545 Bytes - 06:29:56, 30 November 2024
Fujielectric.co.jp/2SK3676-01SJ
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.67 W","Avalanche Energy Rating (Eas)":"244 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"24 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1514 Bytes - 06:29:56, 30 November 2024
