2SK3676-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications P4 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 900 900 6 24 30 6 244 40 5 1.67 195 +150 -55 to +150 *1 L=12.4mH, Vcc=90V,Tch=25C, See to Avalanche Energy Graph < DSS, Tch=150C < *4 VDS < *3 IF< =-ID, -di/dt=50A/s, Vcc=BV = 900V Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C < *2 Tch=150C *5 VGS=-30V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C VDS=720V VGS=0V Tch=125C VGS=30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=3A VGS=10V Min. 900 3.0 3.7 RGS=10 VCC =450V ID=6A VGS=10V L=12.4mH Tch=25C IF=6A VGS=0V Tch=25C IF=6A VGS=0V -di/dt=100A/s Tch=25C Typ. 1.92 7.4 750 100 7 21 8.0 42 11 25 3 7 Max. 5.0 25 250 100 2.50 1125 150 11 32 12 63 16.5 32 4.5 10.5 6 0.90 1.1 5.5 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.640 75.0 Units C/W C/W 1 2SK3676-01L,S,SJ FUJI POWER MOSFET Characteristics Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C Allowable Power Dissipation PD=f(Tc) 250 10V 8.0V 7.0V 20V 8 200 6.5V 6 6.0V ID [A] PD [W] 150 4 100 2 50 VGS=5.5V 0 0 0 25 50 75 100 125 0 150 5 10 15 20 VDS [V] Tc [C] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 10 1 VGS[V] 2.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 6.0V VGS=5.5V 10 ID [A] 2.5 6.5V 7 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 7.0V 8.0V 6 10V 20V 2.4 RDS(on) [ ] RDS(on) [ ] 5 2.3 2.2 2.1 4 max. 3 typ. 2 2.0 1 1.9 1.8 0 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3676-01L,S,SJ 7.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=6A,Tch=25C 6.5 6.0 12 Vcc= 180V 5.5 10 720V 4.5 4.0 VGS [V] VGS(th) [V] 450V max. 5.0 3.5 3.0 min. 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 10 1 10 0 10 20 25 30 35 Qg [nC] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Ciss -1 Coss IF [A] C [nF] Tch [C] 1 10 -2 10 -3 Crss 10 0 10 1 10 0.1 0.00 2 0.25 0.50 10 3 0.75 1.00 1.25 1.50 VSD [V] VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 800 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=2A tf 600 10 2 t [ns] EAS [mJ] td(off) td(on) 10 IAS=4A IAS=6A 1 200 tr 10 400 0 10 0 -1 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3676-01L,S,SJ 10 2 10 1 10 0 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V Single Pulse -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4