Product Datasheet Search Results:
4 Pages, 115 KB, Original- 2SK3535-01
- Fuji Electric
- 2SK3535-01
Product Details Search Results:
Fujielectric.co.jp/2SK3535-01
{"Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"252 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"148 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","Transist...
1496 Bytes - 09:55:34, 15 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3535-01.pdf | 0.11 | 1 | Request |
