1
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 250
VDSX 220
Continuous drain current ID±37
±3.4 *4
Pulsed drain current ID(puls] ±148
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 37
Maximum Avalanche Energy EAS *1 251.9
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD2.4 *4
270
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics atTc =25°C ( unless otherwise specified)
Thermalcharacteristics
2SK3535-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
for Switching
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=250V VGS=0V
VDS=200V VGS=0V
VGS=±30V
ID=12.5A VGS=10V
ID=12.5A VDS=25V
VCC=72V ID=12.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
Rth(ch-a) *4 channel to ambient
0.463
87.0
52.0
°C/W
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=72V
ID=25A
VGS=10V
L=309 µH Tch=25°C
IF=25A VGS=0V Tch=25°C
IF=25A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
W
°C
°C
250
3.0 5.0
25
250
10 100
75 100
816
2000 3000
220 330
15 30
20 30
30 45
60 90
20 30
44 66
14 21
16 24
37 1.10 1.65
0.45
1.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super F AP-G Series
Foot Print Pattern
(1) Gate(G)
(3) Source(S)
[power line]
(4) Drain(D)
(2) Source(S)
[signal line]
VGS=30V
Ta=25°C
VDS 250V
Ta=25°C
=
<
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
*1 L=0.309mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
200304
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2
0 2 4 6 8 10 12
0
20
40
60
80
100
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
Characteristics
2SK3535-01 FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
0 25 50 75 100 125 150
0
1
2
3
4
5
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [ °C]
Surface mounted on
1000mm2,t=1.6mm FR-4 PCB
(Drain pad area : 500mm2)
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 20406080100
0.00
0.05
0.10
0.15
0.20
0.25
7.0V6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0 255075100125150
0
50
100
150
200
250
300
Allowable P ower Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
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3
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
2SK3535-01 FUJI POWER MOSFET
VGS=f(Qg):ID=25A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=72V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
0 102030405060
0
2
4
6
8
10
12
14
Qg [C]
Typical Gate Charge Characteristics
VGS [V]
96V
72V
Vcc= 36V
-50 -25 0 25 50 75 100 125 150
0
30
60
90
120
150
180
210
240
270
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=12.5A,VGS=10V
10-1 100101102
10-2
10-1
100
101
C [nF ]
VDS [V]
Typical Capacitanc e
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
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4
2SK3535-01 FUJI POWER MOSFET
0 25 50 75 100 125 150
0
5
10
15
20
25
30
IAV [A]
starting Tch [°C]
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
0 1000 2000 3000 4000 5000
0
10
20
30
40
50
60
70
80
90
100
Rth(ch-a) [°C/W]
Drain Pad Area [mm2]
Thermal Resistance vs. Drain Pad area
t=1.6mm FR-4 PCB
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
IAS=15A
IAS=22A
IAS=37A
EAS [mJ]
starting Tc h [°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(s tarting Tc h) :Vcc = 48V
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single P uls e
Maximum Avalanche Current Pulsewidth
IAV=f(tAV): s tar ti ng T c h= 25 °C,Vcc=48V
Aval an che Curre nt I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum T ransient Thermal Im pedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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