Datasheet.Directory

{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V","Transistor Appl...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3, SC-65-3; PRSS0004ZE-A","Family":"FETs - Single","Vgs(th) (Max) @ Id":"-","Series":"-","Standard Package":"1","Supplier Device Package":"TO-3P","Datasheets":"2SK1341-E","Rds On (Max) @ Id, Vgs":"3 Ohm @ 3A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"100W","Package \/ Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"900V","Current - C...