Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1341
Silicon N Channel MOS FET REJ03G0938-0200
(Previous : AD E-208- 1 278)
Rev.2.00
Sep 07, 2005
Application
High speed power swit ching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
123
2SK1341
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 900 V
Gate to source voltage VGSS ±30 V
Drain current ID 6 A
Drain peak current ID(pulse)*1 15 A
Body to drain diode reverse drain current IDR 6 A
Channel dissipation Pch*2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 900 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
Zero gate voltage drain current IDSS — — 250 µA VDS = 720 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance RDS(on) — 2.0 3.0 Ω I
D = 3 A, VGS = 10 V *3
Forward transfer admittance |yfs| 2.3 3.7 — S ID = 3 A, VDS = 20 V *3
Input capacitan ce Ciss — 980 — pF
Output capacitance Coss — 400 — pF
Reverse transfer capacitance Crss — 195 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 20 — ns
Rise time tr — 80 — ns
Turn-off delay time td(off) — 125 — ns
Fall time tf — 100 — ns
ID = 3 A, VGS = 10 V,
RL = 10 Ω
Body to drain diode forward voltage VDF — 0.9 — V IF = 6 A, VGS = 0
Body to drain diode reverse recovery
time trr — 1000 — ns IF = 6 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1341
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
150
100
50
0 50 100 150
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
50
1,000
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
1
20
10
5
2
1
0.5
0.2
0.1
0.05
3 10 30 100 300
100 µs
1 ms
DC Operation (T
C
= 25
°
C)
PW = 10 ms (1 Shot)
10 µs
Ta = 25
°
C
Operation in this area
is limited by R
DS (on)
10
20 50
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
8
2
10 30 400
4
6
Drain Current I
D
(A)
Pulse Test
VGS = 4 V
10 V
6 V
5.5 V
5 V
4.5 V
5
410
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
4
1
2680
2
3
VDS = 20 V
Pulse Test
Ta = 25
°
C
75
°
C
–25
°
C
20
820
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS (on)
(V)
16
4
412160
8
12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
ID = 5 A
2 A
1 A
Pulse Test
50
20
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.2
Static Drain to Source on State
Resistance vs. Drain Current
0.5 1 2 5 10
20
10
5
2
1
0.5
Pulse Test
15 V
VGS = 10 V
2SK1341
Rev.2.00 Sep 07, 2005 page 4 of 6
10
40 160
Case Temperature TC (°C)
Static Drain to Source on State Resistance
RDS (on) (Ω)
8
2
0 80 120
0
4
6
Static Drain to Source on State
Resistance vs. Temperature
–40
I
D
= 5 A
V
GS
= 10 V
Pulse Test
1 A
2 A
10
5
Drain Current ID (A)
Forward Transfer Admittance yfs (S)
Forward Transfer Admittance
vs. Drain Current
0.05 0.1 0.2 0.5 1 2
5
2
1
0.5
0.2
0.1
V
DS
= 20 V
Pulse Test
–25°C
T
C
= 25°C
75°C
5,000
10
Reverse Drain Current IDR (A)
Reverse Recovery Time trr yfs (ns)
Body to Drain Diode Reverse
Recovery Time
0.1
2,000
1,000
500
200
100
50
0.2 0.5 1 2 5
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
10,000
20 50
Drain to Source Voltage VDS (V)
Capacitance C (pF)
10 30 40
Typical Capacitance vs.
Drain to Source Voltage
0
1,000
100
10
Crss
Coss
Ciss
V
GS
= 0
f = 1 MHz
1,000
40 100
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
800
200
20 60 800
400
600
20
16
4
0
8
12
Gate to Source Voltage VGS (V)
V
DD
= 250 V
400 V
600 V
I
D
= 6 A
V
DS
V
GS
600 V
400 V
V
DD
= 250 V
500
10
Drain Current ID (A)
Switching Time t (ns)
0.1
Switching Characteristics
200
100
50
20
10
5
0.2 0.5 1 2 5
V
GS
= 10 V, V
DD
30 V
PW = 2 µs, duty < 1%
=
..
t
d (off)
t
f
t
d (on)
t
r
2SK1341
Rev.2.00 Sep 07, 2005 page 5 of 6
10
0.8 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
8
0.4 1.2 1.6
4
6
Reverse Drain Current vs.
Source to Drain Voltage
0
2
Pulse Test
V
GS
= 0, –5 V
5 V, 10 V
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
1.0
0.1
0.3
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
Normalized Transient Thermal Impedance vs. Pulse Width
PW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 1.25°C/W, T
C
= 25°C
T
T
C
= 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
Switching Time Test Circuit
Vin Monitor
Vout Monitor
R
L
D.U.T
50 Ω
Vin
10 V
Vout
Waveforms
t
d
(on)
10%
10%
90% 90%
10%
90%
Vin
t
r
t
d
(off)
t
f
V
DD
= 30 V
2SK1341
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
φ
3.2 ± 0.2
4.8 ± 0.2
1.5
0.3
2.8
0.6 ± 0.2
1.0 ± 0.2
18.0 ± 0.5 19.9 ± 0.2
15.6 ± 0.3
0.5
1.0
5.0 ± 0.3
1.6
1.4 Max 2.0
2.0
14.9 ± 0.2
3.6 0.9
1.0
5.45 ± 0.55.45 ± 0.5
Package Name
PRSS0004ZE-A TO-3P / TO-3PV
MASS[Typ.]
5.0gSC-65
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1341-E 500 pcs Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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