Product Datasheet Search Results:
- 2SD718
- Mospec Semiconductor
- High-Power NPN Silicon Power Transistor
- 2SD718
- Unisonic Technologies Co., Ltd.
- 10 A, 120 V, NPN, Si, POWER TRANSISTOR
- 2SD718O
- Unisonic Technologies Co., Ltd.
- 10 A, 120 V, NPN, Si, POWER TRANSISTOR
- 2SD718R
- Unisonic Technologies Co., Ltd.
- 10 A, 120 V, NPN, Si, POWER TRANSISTOR
- 2SD718
- Various Russian Datasheets
- Transistor
- 2SD718
- Wing Shing Computer Components
- NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
Product Details Search Results:
N_a/2SD718
{"Category":"NPN Transistor, Transistor","Amps":"8A","MHz":"12 MHz","Volts":"120V"}...
512 Bytes - 22:16:30, 25 November 2024
Unisonic.com.tw/2SD718
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3P, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"55","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"12 MHz","Collector Current-Max (IC)":"10 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Transistor...
1285 Bytes - 22:16:30, 25 November 2024
Unisonic.com.tw/2SD718O
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3P, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"80","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"12 MHz","Collector Current-Max (IC)":"10 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Transistor...
1289 Bytes - 22:16:30, 25 November 2024
Unisonic.com.tw/2SD718R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3P, 3 PIN","Terminal Form":"THROUGH-HOLE","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"55","Collector-emitter Voltage-Max":"120 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"12 MHz","Collector Current-Max (IC)":"10 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Transistor...
1291 Bytes - 22:16:30, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
LXM32SD72N4.pdf | 8.27 | 1 | Request |