UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R214-003,A
HIGH POWER AMPLIFIER
APPLICATION
FEATURES
*Recommended for 45~50W Audio Frequency
*Amplifier Output Stage.
*Complementary to 2SB688.
TO-3P
1
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 120 V
Emitter-Base Voltage VEBO 5 V
Collector Current Ic 10 A
Base Current IB 1 A
Collector Power Dissipation (Tc=25℃) Pc 80 W
Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55 ~150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified))
PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage V(BR)CEO Ic=50mA,IB=0 120 V
Collector Cut-off Current ICBO VCB=120V,IE=0 10
μA
Emitter Cut-off Current IEBO VEB=5V,Ic=0 10
μA
DC Current Gain HFE VCE=5V,Ic=1A 55 160
Collector-Emitter Saturation Voltage VCE(sat) Ic=6A,IB=0.6A 2.0 V
Base-Emitter Voltage VBE VCE=5V,Ic=5A 1.5 V
Transition Frequency fT VCE=5V,Ic=1A 12 MHz
Collector Output Capacitance Cob VCB=10V,IE=0, f=1MHz 170 pF
CLASSIFICATION OF hFE
RANK R O
RANGE 55-110 80-160
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R214-003,A
ELECTRICAL CHARACTERISTICS CURVES
12
8
6
4
2
02
COLLECTOR-EMITTER VOLTAGE, VCE (V)
COLLECTOR CURRENT, Ic (A)
812
Ic - VCE
46 10
10
014
COMMON EMITTER
Tc=25°C
400 300
200
100
50
0
IB=20mA
1k
300
100
50
30
0.01 0.03
COLLECTOR CURRENT, Ic (A)
DC CURRENT GAIN, hFE
1
hFE - Ic
0.1 0.3 3
500
10 10
Tc=-25°C
1
0.3
0.1
0.05
0.03
0.01 0.03
COLLECTOR CURRENT, Ic (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE, VCE(sat) (V)
1
VCE(sat) - Ic
0.1 0.3 3
0.5
0.01
10
COMMON EMITTER
Ic/IB=10
Tc=100°C
Tc=25°C
Tc=-25°C
100
60
40
20
040
AMBIENT TEMPERATURE, Ta (℃ )
COLLECTOR POWER DISSIPATION, Pc (W)
160 240
Pc - Ta
80 120 200
80
0
Ta=Tc
INFINITE HEAT SINK
300
×
300×2mm AI
HEAT SINK
200×200×2mm AI
HEAT SINK
100×100×2mm AI
HEAT SINK
NO HEAT SINK
1
3
4
5
2
1
2
3
4
5
Tc=25°C
Tc=100°C
COMMON EMITTER
VcE=5V
131030100
300
0.1
0.3
1
3
10
30
COLLECTOR-EMITTER VOLTAGE, VCE (V)
COLLECTOR CURRENT, Ic (A)
SAFE OPERATING AREA
IC MAX(PULSED) *
IC MAX(CONTINUOUS)
t=1mS *
10mS *
100mS *
500mS *
DC OPERATION
Tc=25
°
C
*SINGLE NONREPETITIVE
PULSE Tc=25°C CURVES
MUST BE DERATED
LINEARLY WIHT INCREASE
IN TEMPERATURE.
VCEO MAX.
UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R214-003,A
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
