Product Datasheet Search Results:
- 2SC2230-BP
- Micro Commercial Components Corp.
- 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
- 2SC2230GR-BP
- Micro Commercial Components Corp.
- 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
- 2SC2230Y-BP
- Micro Commercial Components Corp.
- 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
- 2SC2230A-G
- N/a
- Transistor Shortform Datasheet & Cross References
- 2SC2230A-Y
- N/a
- Transistor Shortform Datasheet & Cross References
Product Details Search Results:
Mccsemi.com/2SC2230-BP
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"160 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"0.1000 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM...
1423 Bytes - 13:14:24, 04 December 2024
Mccsemi.com/2SC2230GR-BP
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"200","Collector-emitter Voltage-Max":"160 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"0.1000 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM...
1437 Bytes - 13:14:24, 04 December 2024
Mccsemi.com/2SC2230Y-BP
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.8000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"160 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"0.1000 A","EU RoHS Compliant":"Yes","Terminal Position":"BOTTOM...
1431 Bytes - 13:14:24, 04 December 2024
N_a/2SC2230(A)
{"Category":"NPN Transistor, Transistor","Amps":"0.1A","MHz":">50 MHz","Volts":"200V"}...
542 Bytes - 13:14:24, 04 December 2024
Toshiba.co.jp/2SC2230A-GR
{"@I(C) (A) (Test Condition)":"10m","Absolute Max. Power Diss. (W)":"800m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"180","Package":"TO-92","h(FE) Min. Static Current Gain":"400","V(BR)CBO (V)":"200","Military":"N","C(obo) (Max) (F)":"7.0p"}...
802 Bytes - 13:14:24, 04 December 2024
Toshiba.co.jp/2SC2230AGR
{"V(CE)sat Max.(V)":".5","Absolute Max. Power Diss. (W)":"800m","V(BR)CBO (V)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"200","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"400","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"200","Package":"TO-92var","f(T) Min. (Hz) Transition Freq":"50M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"180","Military":"N","@I(C) (A) (T...
1027 Bytes - 13:14:24, 04 December 2024
Toshiba.co.jp/2SC2230A-Y
{"@I(C) (A) (Test Condition)":"10m","Absolute Max. Power Diss. (W)":"800m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"180","Package":"TO-92","h(FE) Min. Static Current Gain":"240","V(BR)CBO (V)":"200","Military":"N","C(obo) (Max) (F)":"7.0p"}...
797 Bytes - 13:14:24, 04 December 2024
Toshiba.co.jp/2SC2230AY
{"V(CE)sat Max.(V)":".5","Absolute Max. Power Diss. (W)":"800m","V(BR)CBO (V)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"120","I(C) Abs.(A) Collector Current":"100m","h(FE) Max. Current gain.":"240","@Freq. (Hz) (Test Condition)":"1.0M","I(CBO) Max. (A)":"100n","@V(CBO) (V) (Test Condition)":"200","Package":"TO-92var","f(T) Min. (Hz) Transition Freq":"50M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"5.0m","V(BR)CEO (V)":"180","Military":"N","@I(C) (A) (T...
1023 Bytes - 13:14:24, 04 December 2024
Toshiba.co.jp/2SC2230A-Y(F)
{"Collector Current (DC) ":"0.1(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"180(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Power","Power Dissipation":"0.8(W)","Rad Hardened":"No","Frequency":"50(MHz)","Package Type":"TO-92 Mod","Collector-Base Voltage":"200(V)","DC Current Gain":"120@10MA@10V","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...
1481 Bytes - 13:14:24, 04 December 2024
Toshiba.co.jp/2SC2230O
{"@I(C) (A) (Test Condition)":"10m","I(CBO) Max. (A)":"100n","Absolute Max. Power Diss. (W)":"800m","I(C) Abs.(A) Collector Current":"100m","@V(CE) (V) (Test Condition)":"10","f(T) Min. (Hz) Transition Freq":"50M","V(BR)CEO (V)":"160","Package":"TO-92var","h(FE) Min. Static Current Gain":"120","V(BR)CBO (V)":"200","Military":"N","C(obo) (Max) (F)":"7.0p"}...
815 Bytes - 13:14:24, 04 December 2024
Toshiba.co.jp/2SC2230-Y(F)
{"Collector Current (DC) ":"0.1(A)","Transistor Polarity":"NPN","Collector-Emitter Voltage":"160(V)","Mounting":"Through Hole","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Power","Power Dissipation":"0.8(W)","Rad Hardened":"No","Frequency":"50(MHz)","Package Type":"TO-92 Mod","Collector-Base Voltage":"200(V)","DC Current Gain":"120@10MA@10V","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","Number of Elements":"1"}...
1475 Bytes - 13:14:24, 04 December 2024
Various/2SC2230
TVM, 2SC2230, Silicon, NPN, 800mW, 300V, 160V, 5V, 100mA, 150°C, 50MHz, 7, 120MIN, TOS, TO92-1...
533 Bytes - 13:14:24, 04 December 2024