FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a* + 7 i K & (T. = 25C) 6 & = #6) % wo #| me ei m ie) | Von] Veo | Fe | Po | % | tea matt [erie Cees Aare] <4 7%] he | he] lng fas [Con] roe) le x cv) | CV) | (mA) | (mwa) CC) | (HA) [Vea(v) Veet fctma)|venv V)[le(ma)] Aro us ie 4) tae di Me) | (pF) a La 250595 (22 og) SW SiEP| 30 | 5 | 200 | 300 | 150 | 2 | 1%) 60} 1 1 Jo] 10 | 10 | 60 feeeSon Ss 7 ons 450") 4 40 * l49c > 50618, [RF PA | 6 | 5 | 500 | 800 | 175 | 0.5 | 20 |m~10| 10 , 30 | 10 | -30| 50 | 400*| 6 | 40 * asp vsa7 lk Z| pa [oe [4 fra (Ol as [5 | a0 | / | 100 | 30 2 ee ee 598 Agi Ts | 65 [ 4 [15a | OW] a7 | 5 | 30 | | 400" tf fi | 599 |= ee 60 4 [15a pow.,| 200 | 500 | 28 | 500 "| 25 7 lua | 600 [R2 OE) |e | 4 13a PON.) 175 | 12 | 30 4oo*} a4 | 7.5* a1 601 | RF.SW | o* 40 5 | 100 | 300 | 175 | 0.1 | 20 ee eS p< iensl 580] 2.4 2% [sc | 602 REA | ORF " 30 3 30 | 200 | 150 | 1 15 0 | tome) s00"| 1.3 | 70 |50C 603/H | Ch SiLE| 7 7 | 50 | 200 | 150 | 2 6 | 100 | 0.5 | 0.1 [YAM eSave re, Alnezen OMY 70 *| 5.5 [Cots] 47 [BRIBE 604 _| | |_| v5 fn eGo) si | ao | 4 | 20 | 150 | 150 | 0.2 | 20 | eo | io | 2 w [-2{| m] | 480") 0.5 [O 5%, 606) # " " 30 4 20 150 | 150 | 0.2 20 60 10 2 10 | -2 70 530*| 0.5 oF oes * 607/H %IPA sitT| 7 | 4 | 600 |1w| is | 5 | 40 10 | -50 | 50 70 *| 25 20 * | oslo | " % | 4 {isa [Jel as | 5 | 40 Toe 50 | 60 [ 7 70 *| 25 | 20 *lo7B 609) + fon | 2 | 4 |isa | JOW) 175 | 5 | 40 10 | ~50 | 60 | | 0 Le 8" [oa | 6lole | si.Tp| 100 | 4 | 10A | 290%) 175 Joma; 40 | 50 | 1 | 1A (f=40MMe, Vor 40V, Pi=7.5W) tog y ei ERG RF Com |si gpl a0 | 3 | 20 | 200 | 150 | 2 | 10 wo |-2 | o NTP Re) wooo") 1 [5% [soc] | | 612 RP | RF * | 3 | 2 | 20 180 | 75 | 1 10 wo | 2 | 80 | FEM.) | 1300") 2 2-430.0] 50C | * 613/8 |/SW " 40 5 } 200 | 360 | 200 | 0.1 | 20 | 80 1 10 fons 2onS) four 250 49C * 614/= E} Ose. PA Si.P | 80 4/15 ale SW las | 1 | 40 | 80 | 10 | 250 | 10 | 250 | 200 *| 12.5 8 |84B 7] ps) | 30 | 4 j 1.5 AlZ-58) 175 | 1 | 10 | 80 | 10 | 250 | 10 | 250 ti 2o0*| 12.5 | 8 | aa 616} # " 80 1.5 Aj JW} 175 | 1 40 10 |.250} 80 200*| 12.5} 8 | 83 + 6i7| " 30 1.5 Al ISW. | 175 1. | 1 10 | -250 | 80 | 8 618 | #--ii| RF Si. EP] 25 4 | 25 | 150 | 150 | 0.1 | 12 6 | -2 | 50 | NPRM) | 800") * 618A) * " 25 4 ] 2 | 150 | 150 | 02 | 12 6 |-2 | 50 | SFU SSB re) 619|= #/SW.PA [{Si.EP| 30 5 | 200 | 250 | 125 | 1 23 | n0} 6 10 bon es MONS, 1/5 2500S 620| |RF.PA | 50 | 5 | 200 | 250 | 125 | 1 | 2 | go | 6 | 1 | 6 | -1 ~ real BRCeemial S| os | 4 | yoo | iso | 50 | 1 | 2 | 7 | 6 | 10 | 6 |-1 | 80 | 2500 | 0.4 | 38 622] # |RE;Conv.Mix) 25 4 | 100 | 150 | 150 | 1 25 75 6 10 6 |-1 ) 80 | 2500] 0.4 | 15 * 623 | Ta] SW * | 40 | 4.5 | 150 10 | 150 | 0.8 | 20 | 60 | 1 10 br S30nS. 1/<30nS 22 KT-2003