Product Details Search Results:
N_a/2SB1067
{"Category":"Transistor, Darlington Transistor","Amps":"2A","MHz":"<1 MHz","Volts":"80V"}...
546 Bytes - 14:44:08, 27 April 2025
Toshiba.co.jp/2SB1067
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-8H1A, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.5 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"2000","Collector-emitter Voltage-Max":"80 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"50 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"SINGLE","Transistor Polarit...
1422 Bytes - 14:44:08, 27 April 2025
Toshiba.co.jp/2SB1067(Q)
{"Polarity":"PNP","Collector Current (DC) ":"2(A)","Collector-Emitter Saturation Voltage":"1.5(V)","Base-Emitter Saturation Voltage (Max)":"2(V)","Collector-Emitter Voltage":"80(V)","Mounting":"Through Hole","Emitter-Base Voltage":"8(V)","Rad Hardened":"No","Maximum Collector Cut-off Current":"10","Power Dissipation":"1.5(W)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-126IS","Collector-Base Voltage":"80(V)","DC Current Gain":"2000","Configurati...
1572 Bytes - 14:44:08, 27 April 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SB1067.pdf | 0.17 | 1 | Request |
