2SB1067(Q) - TOSHIBA - Pdf.Support

2SB1067

2009-12-21

TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)

2SB1067

Micro-Moter Drive, Hammer Drive Applications

Switching Applications

Power Amplifier Applications

• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)

• Low saturation voltage: VCE (sat) = −1.5 V (max)

(IC = −1 A, IB = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −80 V

Collector-emitter voltage VCEO −80 V

Emitter-base voltage VEBO −8 V

Collector current IC −2 A

Base current IB −0.5 A

Ta = 25°C 1.5

Collector power

dissipation Tc = 25°C

Junction temperature Tj 150 °C

Storage temperature range Tstg −55 to 150 °C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

Industrial Applications

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-8H1A

Weight: 0.82 g (typ.)

BASE

EMITTER

≈ 4 kΩ ≈ 800 Ω

COLLECTOR

2SB1067

2009-12-21

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO V

CB = −80 V, IE = 0 ― ― −10 μA

Emitter cut-off current IEBO V

EB = −8 V, IC = 0 ― ― −4 mA

Collector-emitte breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −80 ― ― V

DC current gain hFE V

CE = −2 V, IC = −1 A 2000 ― ―

Collector-emitter saturation voltage VCE (sat) IC = −1 A, IB = −1 mA ― ― −1.5 V

Base-emitter saturation voltage VBE (sat) I

C = −1 A, IB = −1 mA ― ― −2.0 V

Transition frequency fT V

CE = −2 V, IC = −0.5 A ― 50 ― MHz

Collector output capacitance Cob V

CB = −10 V, IE = 0, f = 1 MHz ― 30 ― pF

Turn-on time ton ― 0.4 ―

Storage time tstg ― 2.0 ―

Switching time

Fall time tf

IB1 = 1 mA,IB2 = 1 mA

duty cycle ≤ 1%

― 0.4 ―

μs

Marking

Note2: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

IB1

20 μsInput

IB2

VCC = −30 V

IB2

IB1

Output

30 Ω

B1067 Part No. (or abbreviation code)

Lot No.

Note2

2SB1067

2009-12-21

Collector-emitter voltage VCE (V)

IC – VCE

Collector current IC (A)

hFE – IC

DC current gain hFE

Collector current IC (A)

VCE (sat) – IC

Collector-emitter saturation voltage

VCE (sat) (V)

Collector current IC (A)

Base-emitter saturation voltage

VBE (sat) (V)

Base-emitter voltage VBE (V)

IC – VBE

Collector current IC (A)

VBE (sat) – IC

−0.8

−1.6

−0.8 −1.6 −2.4 −3.2

Common emitter

VCE = −2 V

Tc = 100°C

−55

Collector current IC (A)

Ambient temperature Ta (°C)

PC – Ta

Collector power dissipation PC (W)

−0.8

−1.6

−2 −4 −6 −8

IB = −200 μA

−1000

−800

−600

−500

−400

−300

Common emitter

Tc = 25°C

10000

−0.01

Common emitter

VCE = −2 V

100

300

500

1000

3000

5000

−0.03 −0.1 −0.3 −1 −3

Tc = 100°C 25

−55

−0.5

−0.3

−3

Tc = −55°C

100

Common emitter

IC/IB = 1000

−1

−1 −3

−5

Common emitter

IC/IB = 1000

−0.3 −1 −3

−1

−3

Tc = −55°C

100

(1) Tc = Ta Infinite heat sink

(2) No heat sink

40 80 120 160 200 240

(1)

(2)

2SB1067

2009-12-21

Collector-emitter voltage VCE (V)

Safe Operating Area

Collector current IC (A)

−3 −10 −30 −100

−0.02

−1

−5

−0.05

−0.1

−0.3

−0.5

−1

−3

*: Single nonrepetitive pulse

Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

IC max (continuous)

IC max (pulsed)*

VCEO max

1 ms*

10 ms*

100 μs*

DC operation

Tc = 25°C

2SB1067

2009-12-21

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information

in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with

TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are

responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and

systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the

Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of

all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes

for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their

own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such

design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,

diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating

parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR

APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring

equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.

Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or

reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious

public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used

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or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.

Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,

including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of

noncompliance with applicable laws and regulations.