Product Datasheet Search Results:
- 2SA1020-Y
- Micro Commercial Components Corp.
- SMALL SIGNAL TRANSISTOR
- 2SA1020-Y-AP
- Micro Commercial Components Corp.
- SMALL SIGNAL TRANSISTOR
- 2SA1020-Y-BP
- Micro Commercial Components Corp.
- SMALL SIGNAL TRANSISTOR
- 2SA1020-Y(F)
- Toshiba
- Trans GP BJT PNP 50V 2A 3-Pin LSTM
- 2SA1020-Y,F(J
- Toshiba
- Silicon NPN Epitaxial Type GP BJT
- 2SA1020-Y,F(J)
- Toshiba
- 2SA1020-Y,F(J)
- 2SA1020-Y,T6F(J)
- Toshiba
- 2SA1020-Y,T6F(J)
- 2SA1020-Y(TE6,F,M)
- Toshiba
- Bipolar Transistors - BJT PNP -50V -2A 900mW
- 2SA1020-YTPE6
- Toshiba America Electronic Components, Inc.
- 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Product Details Search Results:
Mccsemi.com/2SA1020-Y
{"Status":"DISCONTINUED","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
769 Bytes - 05:46:49, 27 November 2024
Mccsemi.com/2SA1020-Y-AP
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
781 Bytes - 05:46:49, 27 November 2024
Mccsemi.com/2SA1020-Y-BP
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...
779 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-92MOD, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.9000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Pol...
1422 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y(F)
{"Collector Current (DC) ":"2 A","Transistor Polarity":"PNP","Collector Current (DC) (Max)":"2 A","Collector-Emitter Voltage":"50 V","Mounting":"Through Hole","Emitter-Base Voltage":"5 V","Category ":"Bipolar Small Signal","DC Current Gain (Min)":"120","Operating Temperature Classification":"Military","Power Dissipation":"0.9 W","Operating Temp Range":"-55C to 150C","Frequency":"100 MHz","Package Type":"LSTM","Collector-Base Voltage":"50 V","Rad Hardened":"No","DC Current Gain":"120","Pin Count":"3","Number...
1557 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y,F(J
{"Mounting":"Through Hole","Rad Hardened":"No","Package Type":"TO-92 Mod","Pin Count":"3"}...
1048 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y,F(J)
839 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y,T6F(J
852 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y,T6F(J)
845 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y(TE6,F,M)
{"Emitter- Base Voltage VEBO":"- 5 V","Gain Bandwidth Product fT":"100 MHz","Product Category":"Bipolar Transistors - BJT","Transistor Polarity":"PNP","Minimum Operating Temperature":"- 55 C","Factory Pack Quantity":"3000","DC Collector/Base Gain hfe Min":"70","DC Current Gain hFE Max":"240","Collector-Emitter Saturation Voltage":"- 0.5 V","Collector- Emitter Voltage VCEO Max":"- 50 V","Packaging":"Ammo Pack","Collector- Base Voltage VCBO":"- 50 V","Mounting Style":"Through Hole","Pd - Power Dissipation":"9...
1844 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-YTPE6
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.9000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"120","Collector-emitter Voltage-Max":"50 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"100 MHz","Collector Current-Max (IC)":"2 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE S...
1388 Bytes - 05:46:49, 27 November 2024
Toshiba.co.jp/2SA1020-Y(TPE6,F)
854 Bytes - 05:46:49, 27 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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2SA1020.pdf | 0.16 | 1 | Request |