Product Datasheet Search Results:
3 Pages, 136 KB, Original- 2N7002LT3
- Leshan Radio Company Co., Ltd.
- Small Signal MOSFET 115 mAmps, 60 Volts
3 Pages, 136 KB, Original- L2N7002LT3
- Leshan Radio Company Co., Ltd.
- 60 V, 115 mA, small signal MOSFET
4 Pages, 90 KB, Original- 2N7002LT3
- On Semiconductor
- MOSFET N-CH 60V 115MA SOT-23 - 2N7002LT3
4 Pages, 90 KB, Original- 2N7002LT3G
- On Semiconductor
- MOSFET N-CH 60V 115MA SOT-23 - 2N7002LT3G
4 Pages, 89 KB, Original- 2N7002LT3H
- On Semiconductor L.l.c.
- 75 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Product Details Search Results:
Onsemi.com/2N7002LT3
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"SOT-23-3","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Series":"-","Standard Package":"10,000","PCN Design/Specification":"Copper Wire 26/May/2009","Supplier Device Package":"SOT-23-3 (TO-236)","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N7002L","Power - Max":"225mW","Package / Case":"TO-236-3, SC-59, SOT-2...
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Onsemi.com/2N7002LT3G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.5V @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"115mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT-23-3","PCN Design/Specification":"Copper Wire 26/May/2009","Rds On (Max) @ Id, Vgs":"7.5 Ohm @ 500mA, 10V","Datasheets":"2N7002L Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"10,000","Drain to Source Voltage (Vdss)":"...
1798 Bytes - 10:00:31, 01 December 2024
Onsemi.com/2N7002LT3H
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0750 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1533 Bytes - 10:00:31, 01 December 2024
