L2N7002LT1–1/3
LESHAN RADIO COMPANY, LTD.
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3
2
L2N7002LT1
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
RDS(on) = 7.5
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2
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N - Channel
DevicePackageShipping
ORDERING INFORMATION
2N7002LT1SOT–233000 Tape & Reel
W
702
702= Device Code
W= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
GateSource
2N7002LT3SOT–2310,000 Tape & Reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 60 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
ID
ID
IDM
±115
±75
±800
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs) VGS
VGSM
±20
±40 Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg –55 to
+150 °C
1.The Power Dissipation of the package may result in a lower continuous drain
current.
2.Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3.FR–5 = 1.0 x 0.75 x 0.062 in.
4.Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
LESHAN RADIO COMPANY, LTD.
L2N7002LT1–2/3
L2N7002LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc) V(BR)DSS 60 – – Vdc
Zero Gate Voltage Drain CurrentTJ = 25°C
(VGS = 0, VDS = 60 Vdc)TJ = 125°CIDSS –
––
–1.0
500 µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc) IGSSF – – 100 nAdc
Gate–Body Leakage Current, Reverse
(VGS = –20 Vdc) IGSSR – – –100 nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc) VGS(th) 1.0 – 2.5 Vdc
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) ID(on) 500 – – mA
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on) –
––
–3.75
0.375
Vdc
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc)TC = 25°C
TC = 125°C
rDS(on) –
–
–
–
–
–
–
–
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc) gFS 80 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – – 50 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss– – 25 pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – – 5.0 pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time (V DD = 25 Vdc , ID 500 mAdc, td(on) – – 20 ns
Turn–Off Delay Time
(V
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) td(off) – – 40 ns
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 11.5 mAdc, VGS = 0 V) VSD – – –1.5 Vdc
Source Current Continuous
(Body Diode) IS– – –115 mAdc
Source Current Pulsed ISM – – –800 mAdc
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
LESHAN RADIO COMPANY, LTD.
L2N7002LT1–3/3
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (AMPS)
rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)ID, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
TA = 25°C
VGS = 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
VDS = 10 V -55°C25°C
125°C
VGS = 10 V
ID = 200 mA
VDS = VGS
ID = 1.0 mA
L2N7002LT1
