Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.8300 W","Package Shape":"ROUND","Status":"ACTIVE-UNCONFIRMED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE S...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Package / Case":"TO-226-3, TO-92-3 (TO-226AA)","Supplier Device Package":"TO-92-3","Datasheets":"2N7000","Rds On (Max) @ Id, Vgs":"5 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Bulk","Power - Max":"1W","Standard Package":"1,000"...

{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Brand":"Microchip Technology","Id - Continuous Drain Current":"200 mA","Mounting Style":"Through Hole","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5.3 Ohms","Package / Case":"TO-92-3","RoHS":"Details","Manufacturer":"Microchip"}...

{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transi...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor App...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor App...

{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.4000 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1150 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor App...