2N7000
N-channel enhancement mode field-effect transistor
Rev. 03 — 19 May 2000 Product specification
c
c
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
2N7000 in SOT54 (TO-92 variant).
2. Features
■TrenchMOS™ technology
■Very fast switching
■Logic level compatible.
3. Applications
■Relay driver
■High speed line driver
■Logic level translator.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT54, simplified outline and symbol
Pin Description Simplified outline Symbol
1 drain (d)
SOT54 (TO-92 variant) N-channel MOSFET
2 gate (g)
3 source (s)
321
03ab40
d
g
s
03ab30
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 2 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−60 V
IDdrain current (DC) Tamb =25°C; VGS =10V −300 mA
Ptot total power dissipation Tamb =25°C−0.83 W
Tjjunction temperature −150 °C
RDSon drain-source on-state resistance VGS = 10 V; ID= 500 mA 2.8 5 Ω
VGS = 4.5 V; ID= 75 mA 3.8 5.3 Ω
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj=25to150°C−60 V
VDGR drain-gate voltage (DC) Tj=25to150°C; RGS =20kΩ−60 V
VGS gate-source voltage (DC) −±30 V
VGSM peak gate-source voltage tp≤50 µs; pulsed; duty cycle = 25% −±40 V
IDdrain current (DC) Tamb =25°C; VGS =10V;
Figure 2 and 3−300 mA
Tamb = 100 °C; VGS =10V;Figure 2 −190 mA
IDM peak drain current Tamb =25°C; pulsed; tp≤10 µs;
Figure 3 −1.3 A
Ptot total power dissipation Tamb =25°C; Figure 1 −0.83 W
Tstg storage temperature −55 +150 °C
Tjoperating junction temperature −55 +150 °C
Source-drain diode
ISsource (diode forward) current (DC) Tamb =25°C−300 mA
ISM peak source (diode forward) current Tamb =25°C; pulsed; tp≤10 µs−1.3 A
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 3 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
VGS ≥4.5 V
Fig 1. Normalized total power dissipation as a
function of ambient temperature. Fig 2. Normalized continuous drain current as a
function of ambient temperature.
Tamb =25°C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Pder (%)
Tamb (oC)
03aa19
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175
Ider (%)
Tamb (oC)
Pder Ptot
Ptot 25 C
°
()
---------------------- 100%×=
Ider ID
ID25C
°
()
-------------------100%×=
03aa02
0.01
0.1
1
10
1 10 100
D.C. 100 ms
10 ms
1 ms
tp = 10 µs
100 µs
tp
tp
T
P
t
T
δ
=
Tamb = 25oC
RDSon = VDS/ ID
VDS (V)
ID (A)
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 4 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
Rth(j-a) thermal resistance from junction to ambient vertical in still air;
lead length ≤5 mm; Figure 4 150 K/W
Vertical in still air.
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse
duration.
03aa00
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
tp (s)
Zth(j-a)
(K/W)
single pulse
δ = 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
δ =
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 5 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID=10µA; VGS =0V
Tj=25°C6075−V
Tj=−55 °C55−−V
VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V
GS;
Figure 9
Tj=25°C12−V
Tj= 150 °C 0.6 −−V
Tj=−55 °C−−3.5 V
IDSS drain-source leakage current VDS = 48 V; VGS =0V
Tj=25°C−0.01 1.0 µA
Tj= 150 °C−−10 µA
IGSS gate-source leakage current VGS =±15 V; VDS =0V −10 100 nA
RDSon drain-source on-state
resistance VGS =10V; I
D= 500 mA;
Figure 7 and 8
Tj=25°C−2.8 5 Ω
Tj= 150 °C−−9.25 Ω
VGS = 4.5 V; ID=75mA;
Figure 7 and 8
Tj=25°C−3.8 5.3 Ω
Dynamic characteristics
gfs forward transconductance VDS = 10 V; ID= 200 mA;
Figure 11 100 300 −mS
Ciss input capacitance VGS =0V; V
DS =10V;
f = 1 MHz; Figure 12 −25 40 pF
Coss output capacitance −18 30 pF
Crss reverse transfer capacitance −7.5 10 pF
ton turn-on time VDD = 50 V; RD= 250 Ω;
VGS =10V; R
G=50Ω;
RGS =50Ω
−310ns
toff turn-off time −12 15 ns
Source-drain diode
VSD source-drain (diode forward)
voltage IS= 300 mA; VGS =0V;
Figure 13 −0.85 1.5 V
trr reverse recovery time IS= 300 mA;
dIS/dt = −100 A/µs;
VGS =0V; V
DS =25V
−30 −ns
Qrrecovered charge −30 −nC
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 6 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
Tj=25°CT
j=25°C and 150 °C; VDS ≥ID×RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values. Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
03aa04
0
0.2
0.4
0.6
0.8
1
0 0.4 0.8 1.2 1.6 2
3.5 V
Tj = 25oC
4 V
4.5 V
3 V
VDS (V)
ID (A)
VGS = 10 V
03aa06
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
01234567
VDS
> ID
X RDSon
Tj = 25oC150oC
ID (A)
VGS (V)
03aa05
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Tj = 25oC
4.5 V
4 V
3.5V
3 V
RDSon (Ω)
VGS = 10 V
ID (A)
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60 -20 20 60 100 140 180
Tj (oC)
a
aRDSon
RDSon 25 C
°
()
----------------------------
=
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 7 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
ID= 1 mA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature. Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj=25°C and 150 °C; VDS ≥ID×RDSon VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values. Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60 -20 20 60 100 140 180
typ
min
VGS(th) (V)
Tj (oC)
03aa37
0 0.5 1 1.5 2 2.5 3
typmin
ID
(A)
VGS (V)
10-6
10-5
10-4
10-3
10-2
10-1
03aa07
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Tj = 25oC
150oC
VDS
> ID
X RDSon
gfs (S)
ID (A)
03aa09
1
10
100
0.1 1 10 100
Ciss
Coss
Crss
Ciss, Coss
Crss (pF)
VDS (V)
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 8 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
Tj=25°C and 150 °C; VGS =0V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
03aa08
0
0.2
0.4
0.6
0.8
1
0 0.2 0.4 0.6 0.8 1 1.2
Tj = 25oC
150oC
VGS
= 0 V
IS (A)
VSD (V)
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 9 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
9. Package outline
Fig 14. SOT54 (TO-92 variant).
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 5.2
5.0
b
0.48
0.40
c
0.45
0.40
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L1(1)
2.5
b1
0.66
0.56
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54 TO-92 SC-43 97-02-28
A L
0 2.5 5 mm
scale
b
c
D
b1L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads SOT54
e1e
1
2
3
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 10 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
10. Revision history
Table 6: Revision history
Rev Date CPCN Description
03 20000519 HZG336 Product specification; third version.
Converted to TrenchMOS™ technology.
02 19970617 - Product specification; second version.
01 19901031 - Product specification; initial version.
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 11 of 13
9397 750 07153 © Philips Electronics N.V. 2000 All rights reserved.
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Datasheet status Product status Definition[1]
Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 19 May 2000 12 of 13
9397 750 07153 © Philips Electronics N.V. 2000. All rights reserved.
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(SCA69)
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Date of release: 19 May 2000 Document order number: 9397 750 07153
Contents
Philips Semiconductors 2N7000
N-channel enhancement mode field-effect transistor
1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1 Transient thermal impedance. . . . . . . . . . . . . . 4
8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
