Product Datasheet Search Results:
- 2N6761
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 4.5A, 450V/500V
- 2N6761
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.
- 2N6761
- Harris Semiconductor
- Power MOSFET Data Book 1990
- 2N6761
- International Rectifier
- TO-3 N-Channel HEXFETs
- 2N6761
- Ixys Corporation
- High Voltage Power MOSFETs
- 2N6761
- National Semiconductor
- N-Channel Power MOSFETs
- 2N6761
- Semelab Plc.
- 4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
- 2N6761R1
- Semelab Plc.
- 4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
- 2N6761
- Semiconductor Technology, Inc.
- High Voltage MOS Power Field Effect Transistors
Product Details Search Results:
Semelab.co.uk/2N6761
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"2 ohm","Number of Terminals":"2","DS Break...
1232 Bytes - 01:20:41, 30 December 2024
Semelab.co.uk/2N6761R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-...
1291 Bytes - 01:20:41, 30 December 2024
Documentation and Support
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