Product Datasheet Search Results:

2N6761.pdf5 Pages, 138 KB, Scan
2N6761
Fairchild Semiconductor
N-Channel Power MOSFETs, 4.5A, 450V/500V
2N6761.pdf1 Pages, 38 KB, Scan
2N6761
Motorola
European Master Selection Guide 1986
2N6761.pdf4 Pages, 113 KB, Scan
2N6761
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.
2N6761.pdf4 Pages, 118 KB, Scan
2N6761
Harris Semiconductor
Power MOSFET Data Book 1990
2N6761.pdf1 Pages, 109 KB, Scan
2N6761.pdf12 Pages, 1094 KB, Original
2N6761
Ixys Corporation
High Voltage Power MOSFETs
2N6761.pdf3 Pages, 175 KB, Scan
2N6761
N/a
FET Data Book
2N6761.pdf1 Pages, 28 KB, Original
2N6761.pdf1 Pages, 55 KB, Scan
2N6761
Semelab Plc.
4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2N6761R1.pdf1 Pages, 55 KB, Scan
2N6761R1
Semelab Plc.
4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
2N6761.pdf1 Pages, 152 KB, Scan
2N6761
Semiconductor Technology, Inc.
High Voltage MOS Power Field Effect Transistors
2N6761.pdf1 Pages, 42 KB, Scan
2N6761
Siliconix
MOSPOWER Design Data Book 1983

Product Details Search Results:

Semelab.co.uk/2N6761
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-Max":"2 ohm","Number of Terminals":"2","DS Break...
1232 Bytes - 01:20:41, 30 December 2024
Semelab.co.uk/2N6761R1
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source On Resistance-...
1291 Bytes - 01:20:41, 30 December 2024

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