Datasheet.Directory

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JAN2N6661","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"90","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain Cur...

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTX2N6661","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"90","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain C...

{"C(iss) Max. (F)":"50p","Absolute Max. Power Diss. (W)":"6.25","g(fs) Max, (S) Trans. conduct,":"195m","r(DS)on Max. (Ohms)":"4.0","@V(DS) (V) (Test Condition)":"25","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"500m","@(VDS) (V) (Test Condition)":"30","Package":"TO-39","I(DSS) Min. (A)":"10u","Military":"Y","Mil Number":"JANTXV2N6661","t(r) Max. (s) Rise time":"5.0n","V(BR)DSS (V)":"90","t(f) Max. (s) Fall time.":"5.0n","g(fs) Min. (S) Trans. conduct.":"170m","I(D) Abs. Drain ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 1mA","Package / Case":"TO-205AD, TO-39-3 Metal Can","Current - Continuous Drain (Id) @ 25\u00b0C":"350mA (Tj)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"2N6661 VN2210N2","PCN Assembly/Origin":"3L TO-39 Qualification Assembly Site Update 22/Aug/2014 Additional Fabrication Site 03/Sep/2014 Fab Site Addition 14/Aug/2014","Rds On (Max) @ Id, Vgs":"4 Ohm @ 1A, 10V","Datasheets":"2N6661","FET Type":"MOSFET N-Cha...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.7250 W","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Applicat...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"TO-220M, 3 PIN","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Configuration":"SINGLE","Drain-source On Resistance...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"TIN SILVER COPPER","Package Body Material":"METAL","Mfr Package Description":"TO-220M, 3 PIN","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Channel Type":"N-CHANNEL","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"SQUARE","Con...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...

{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.9000 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"90 V","Transistor Appl...