JAN2N6661 - Defense Supply Center Columbus

MIL-PRF-19500/547B

30 July 1999

SUPERSEDING

MIL-S-19500/547A

20 January 1988

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL,

SILICON TYPES 2N6660 AND 2N6661

JAN, JANTX, JANTXV AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level,

high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated

device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-205AD).

1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.

Type PT 1/

TC = +25°C PT

TA = +25°CVDS VDGR

VGS ID1 2/

TC = +25°CID2 2/

TC = +100°CISIDM TJ and

TSTG

2N6660

2N6661

6.25

725

V dc

± 20

A dc

0.99

0.86

A dc

0.62

0.54

A dc

-0.99

-0.86

A(pk)

°C

-65 to +150

1/ Derate linearly 0.05 W/°C for TC > +25°C

2/ Derate above TC = +25 °C according to the formula K

ratedP

ID)(

where P(rated) = 150 - (TC -25) (0.05) watts;

K = max rDS(on) at TJ =+150°C.

3/ RGS ≤ 1 M ohm.

AMSC N/A FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 30 October 1999

INCH-POUND

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

MIL-PRF-19500/547B

1.4 Primary electrical characteristics at TC = +25°C.

Type Min V(BR)DSS

VGS = 0 V

ID = 10 µA dc

VGS(th)1

VDS ≥ VGS

ID = 1.0 mA dc

Max IDSS1

VGS = 0 V Max rDS(on) 1/

VGS = 10 V dc RθJC

Max

VDS = 80 percent

rated VDS

TJ = +25°C

at ID1 TJ = +150°C

at ID2

2N6660

2N6661

V dc

Min Max

0.8 2.0

µA dc

1.0

Ohm

3.0

4.0

Ohm

6.33

8.44

°C/W

1/ Pulsed (see 4.5.1).

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include

documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements

documents cited in section 3 and 4 of this specification, whether or not they are listed.

2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document

to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department

of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

MILITARY

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated

Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this

specification takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific

exemption has been obtained.

3. REQUIREMENTS

3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.

3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-

19500.

3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in

MIL-PRF-19500 and figure 1 (TO-205AD) herein.

MIL-PRF-19500/547B

FIGURE 1. Physical dimensions (TO-205AD).

MIL-PRF-19500/547B

Ltr Dimensions Notes

Inches Millimeters

Min Max Min Max

CD 0.305 0.335 7.75 8.51

CH 0.240 0.260 6.10 6.60

HD 0.335 0.370 8.51 9.40

TW 0.028 0.034 0.71 0.86 2

TL 0.029 0.045 0.74 1.14 3

LD 0.016 0.021 0.41 0.53 7,8

LL 0.500 0.750 12.70 19.05 7,8

LC 0.200 TP 5.08 TP 6

LU 0.016 0.019 0.41 0.48 7,8

L10.050 1.27 7,8

L20.250 6.35 7,8

P0.100 2.54 5

Q0.050 1.27 4

R0.010 0.25 9

α45 TP 45 TP 6

NOTES:

1. Dimensions are in inches. Metric equivalents are given for general information only.

2. Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011 (0.028 mm).

3. Dimension TL measured from maximum HD.

4. Outline in this zone is not controlled.

5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling.

6. Leads at gauge plane 0.054 + 0.001, - 0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm)

radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL

minimum.

8. All three leads.

9. Radius (r) applies to both inside corners of tab.

10. Drain is electrically connected to the case.

FIGURE 1. Physical dimensions(TO-205AD) Continued.

MIL-PRF-19500/547B

3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of

lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.3.2 Internal construction. Multiple chip construction shall not be permitted.

3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.

3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.

The following handling practices shall be followed:

a. Devices shall be handled on benches with conductive handling devices.

b. Ground test equipment, tools, and personnel handling devices.

c. Do not handle devices by the leads.

d. Store devices in conductive foam or carriers.

e. Avoid use of plastic, rubber, or silk in MOS areas.

f. Maintain relative humidity above 50 percent if practical.

g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead.

h. Gate must be terminated to source, R ≤ 100 k, whenever bias voltage is to be applied drain to source.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as

specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing

on the applicable qualified manufacturer's list before contract award (see 4.2 and 6.3 ).

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. Alternate flow is allowed

for qualification inspection in accordance with figure 4 of MIL-PRF-19500.

4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and herein.

MIL-PRF-19500/547B

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as

specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I

herein shall not be acceptable.

Screen (see table IV of

MIL-PRF-19500) Measurement

JANS level JANTX and JANTXV levels

3Test condition G. Test condition G.

1/Method 3161 (see 4.5.3) Method 3161 (see 4.5.3)

9IGSS1, IDSS1, gate stress test (see 4.5.5),

subgroup 2 of table I herein Gate stress test (see 4.5.5), subgroup 2 of table I

herein

10 Method 1042, test condition B Method 1042, test condition B

11 Subgroup 2 of table I herein;

IGSS1, IDSS1, rDS(on)1, VGS(th)1,

∆IGSS1 = ± 10 nA dc or ±100 percent of initial

value, whichever is greater.

∆IDSS1 = ± 1 µA dc or ±100 percent of initial

value, whichever is greater.

Subgroup 2 of table I herein.

IGSS1, IDSS1, rDS(on)1, VGS(th)1

12 Method 1042, test condition A and test condition

C. (see 4.3.1) Method 1042, test condition A, (see 4.3.1)

13 Subgroups 2 and 3 of table I herein;

∆IGSS1 = ± 10 nA dc or ±100 percent of initial

value, whichever is greater.

∆IDSS1 = ± 1 µA dc or ±100 percent of initial

value, whichever is greater.

∆rDS(on)1 = ± 20 percent of initial value or ± 0.5

ohm, whichever is greater.

∆VGS(th)1 = 4± 10 percent of initial value or ±

0.3 V dc.

Subgroup 2 of table I herein;

∆IGSS1 = ± 10 nA dc or ±100 percent of initial

value, whichever is greater.

∆IDSS1 = ± 1 µA dc or ±100 percent of initial

value, whichever is greater.

∆rDS(on)1 = ± 20 percent of initial value or ± 0.5

ohm, whichever is greater.

∆VGS(th)1 = ± 10 percent of initial value or ± 0.3

V dc.

1/ Shall be performed anytime before screen 9.

4.3.1 Power burn-in. Power burn-in conditions are as follows: MIL-STD-750, method 3161, condition C, TA = +25°C, -5°C, +10°C,

VDS = 10 V min.; ID adjusted to meet a junction temperature of 140°C, - 0°C, + 10°C, t = 240 hours.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for

quality conformance inspection in accordance with figure 4 of MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical

measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.

MIL-PRF-19500/547B

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VIa of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points) shall be in accordance with group A,

subgroup 2 herein. Delta measurements shall be in accordance with table II herein. See 4.4.2.2 herein and table VIb of MIL-PRF-19500

for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be in accordance with group A,

subgroup 2 herein. Delta measurements shall be in accordance with table II herein.

4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500.

Subgroup Method Conditions

3 1051 Test condition G.

4 1042 Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.

VDS = 10 V dc, PT = See 1.4 at TA = +25°C ± 3°C.

5 1042 Accelerated steady-state operation life; test condition C; TA = + 25°C, - 5°C, + 10°C, VDS = 10 V

min.; ID adjusted to meet a junction temperature of 140°C, - 0°C, + 10°C, t = 240 hours.

5 2037 Bond strength (Al-Au die interconnects only); test condition A.

6 3161 See 4.5.2.

4.4.2.2 Group B inspection, table IVb (JAN, JANTX and JANTXV) of MIL-PRF-19500.

Subgroup Method Condition

2 1051 Test condition G, 25 cycles.

3 1027 TJ = PT (RθJA) + PT = VDS ID; VDS = 15 V dc; ID ≤ 0.05 A dc; RθJA = 170°C/W;

TA = 30 °C ± 5°C.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

Delta measurements shall be in accordance with table II herein.

Subgroup Method Condition

2 2036 Test condition E .

6 1026 TJ = PT (RθJA) + PT = VDS ID; VDS = 15 V dc; ID ≤ 0.05 A dc; RθJA = 170°C/W;

TA = 30 °C ± 5°C.

MIL-PRF-19500/547B

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in

table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

Delta measurements shall be in accordance with table II herein. A separate sample may be pulled for each test.

Subgroup Method Condition Sampling plan

E1 1051 Test condition G, 500 cycles 45 devices, c = 0

Electrical measurements

See table I, subgroup 2.

E2 1042 Test condition A, 1,000 hours. 45 devices, c = 0

Electrical measurements

See table I, subgroup 2.

E2 1042 Test condition B, 1,000 hours. 45 devices, c = 0

Electrical measurements

See table I, subgroup 2.

E3 Not applicable

E4 3161 RθJC see 1.4 herein. 5 devices, c = 0

E5 Not applicable

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Thermal impedance. Thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD 750.

RθJC (max) = 20 °C/W.

IM measuring current .......................................................10 mA.

IM drain heating current.....................................................0.41 A.

tH heating time ..................................................................Steady state (see MIL-STD-750, method 3161 for definition).

VH drain-source heating voltage.......................................10 V.

tMD measurement time delay............................................10 to 80 µs.

tSW sample window time.................................................10 µs (max).

4.5.3 Thermal response (∆VSD measurements). The ∆VSD measurements shall be performed in accordance with MIL-STD-750,

method 3161. The VSD conditions (IH and VH) and maximum limit shall be derived by each vendor from the thermal response curves and

shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall apply.

IM measuring current .......................................................10 mA.

IM drain heating current.....................................................0.41 A.

TH heating time.................................................................Steady state (see MIL-STD-750, method 3161 for definition).

VH drain-source heating voltage.......................................10 V.

tMD measurement time delay............................................10 to 80 µs.

tSW sample window time.................................................10 µs (max).

MIL-PRF-19500/547B

4.5.4 Unclamped inductive switching.

a. Peak current (ID) (see 1.4 herein).

b. Peak gate voltage (VGS)............................................................10 V.

c. Gate to source resistor (RGS) ...................................................25Ω ≤ RGS ≤ 200Ω.

d. Initial case temperature (TC) .....................................................+25°C, +10°C, -5°C.

e. Inductance (L).............................................................................100 µH ±10 percent.

f. Number of pulses to be applied..................................................1 pulse minimum.

g. Pulse repetition rate....................................................................None.

4.5.5 Gate stress test.

VGS = ± 30 V minimum.

t = 250 µs minimum.

MIL-PRF-19500/547B

TABLE I. Group A inspection.

Inspection 1/MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 1

Visual and mechanical

Inspection 2071

Subgroup 2

Breakdown voltage, drain to

Source

2N6660

2N6661

3407 Bias condition C, VGS = 0 V;

ID = 1.0 µA dc V(BR)DSS

Gate to source voltage

(threshold) 3403 VDS > VGS; ID = -1.0 mA dc VGS(th)1 0.8 2.0 V dc

Gate current 3411 Bias condition C; VDS = 0 V;

VGS = +20 and -20 V dc IGSS1 ±100 nA dc

Drain current 3413 VGS = 0; bias condition C;

VDS = 80 percent of rated VDS (see

1.3)

IDSS1 1.0 µA dc

Drain to source on-state voltage

2N6660

2N6661

3405 VGS = 10 V dc; condition A; pulsed

(see 4.5.1), ID = -1.0 A dc VDS(on)1

3.0

4.0

Drain to source on-state voltage

2N6660

2N6661

3405 VGS = 5 V dc; condition A; pulsed

(see 4.5.1), ID = 0.3 A dc VDS(on)2

1.5

1.6

Static drain to source on-state

resistance

2N6660

2N6661

3421 VGS = 10 V dc; condition A; pulsed

(see 4.5.1); ID = 1.0 A dc rDS(on)1

3.0

4.0

ohms

Static drain to source on-state

resistance

2N6660

2N6661

3421 VGS = 5 V dc; condition A; pulsed

(see 4.5.1); ID = 10.3 A dc rDS(on)2

5.0

5.3

ohms

Forward voltage (source drain

diode)

2N6660

2N6661

4011 Pulsed (see 4.5.1); VGS = 0 V

IS = 0.99 A dc

IS = 0.86 A dc

VSD

0.7

0.7 1.6

1.4

V (pk)

See footnotes at end of table.

MIL-PRF-19500/547B

TABLE I. Group A inspection - Continued.

Inspection 1/MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 2 continued

Forward transconductance

2N6660

2N6661

3475 Pulsed (see 4.5.1), VDS = VGS = 7.5

V dc

ID1 = 525 m A dc

ID2 = 475 m A dc

gFS 170 ms

Subgroup 3

High temperature operation: TC = +125°C

Gate current 3411 Bias condition C, VDS = 0 V;

VGS = +20 V dc and -20 V dc IGSS2 ± 500 nA dc

Drain current 3413 Bias condition C, VGS = 0 V,

VDS = -80 percent of rated VDS (see

1.3)

IDSS2 100 µA dc

Drain to source on-state voltage

2N6660

2N6661

3405 VGS = 10 V dc; condition A; pulsed

(see 4.5.1), ID = 1 A dc VDS(on)3

5.6

7.5

Static drain to source on-state

resistance

2N6660

2N6661

3421 VGS = 10 V dc; condition A; pulsed

(see 4.5.1); ID = 1.0 A dc rDS(on)3

5.6

7.5

ohms

Gate to source voltage(threshold) 3403 VDS > VGS, ID = -1.0 mA dc VGS(th)2 0.3 V dc

Low temperature operation: TC = -55°C

Gate to source voltage

(threshold) 3403 VDS > VGS; ID = 1.0 mA VGS(th)3 2.5 V dc

Subgroup 4

Switching time test 3472 Rgen = 50 Ω; RGS = 50 Ω,

Turn-on delay time VDD = 25 V dc; ID ≅ 1 A dc td(on) 10 ns

Turn-off delay time VDD = 25 V dc; ID ≅ 1 A dc td(off) 10 ns

See footnotes at end of table.

MIL-PRF-19500/547B

TABLE I. Group A inspection - Continued.

Inspection 1/MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 4 - Continued.

Small signal common source

short-circuit input capacitance 3431 VDS = 25 V dc; VGS; = 0 V; f = 1

MHz

Ciss 50 pF

Small signal common source

short-circuit output capacitance VDS = 25 V dc; VGS; = 0V; f = 1

MHz, Coss 40 pF

Small signal common source

short-circuit reverse transfer

capacitance

3433 VDS = 25 V dc; VGS; = 0 V; f = 1

MHz Crss 10 pF

Subgroup 5

Safe operating area

High voltage test

Electrical measurements

See figure 2

VDS = 80 percent of rated VDS (see

1.3)

See table I, subgroup 2.

Subgroups 6 and 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

MIL-PRF-19500/547B

TABLE II. Group B, C and E delta measurements. 1/ 2/ 3/ 4/

Step Inspection 5/MIL-STD-750 Symbol Limit Unit

Method Conditions Min Max

1. Gate current 3411 Bias condition C; VDS = 0 V

VGS = +15 V dc and -15 V dc ∆IGSS ± 10 nA dc or 100

percent of initial

value, whichever is

greater.

2. Drain cutoff current 3413 Bias condition C; VGS = +15 V dc

and -15 V dc

VDS = 60 V for 2N6660

VDS = 90 V for 2N6661

∆IDSS ± 1 µA dc or 100

percent of initial

value, whichever is

greater.

3. Small signal, drain to

source on-state

resistance

3423 VGS = 10 V dc; condition A,

pulsed (see 4.5.1); ID = 1.0 A dc

f = kHz

∆rDS(on) ± 0.5 ohm or ± 20

percent of initial

value , whichever

is greater.

4. Gate to source voltage

(threshold) 3403 VDS = VGS ; ID = 1.0 mA dc ∆VGS(th)± 10 percent of

initial value or

± 0.3 V dc,

whichever is

greater.

5. Thermal resistance 3161 See 4.5.2 RθJC 20 °C/W

1/The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table II herein, step 1.

b. Subgroup 4, see table II herein, step 5.

2/The delta measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table II herein, step 5.

3/The delta measurements for table VII of MIL-PRF-19500 are as follows:

a. Subgroup 6, see table II herein, step 5.

4/The delta measurements for table IX of MIL-PRF-19500 are as follows:

a. Subgroup 1, see table II herein, step 1.

b. Subgroup 2, see table II herein, step 1.

5/See MIL-PRF-19500 for sampling plan.

MIL-PRF-19500/547B

FIGURE 2. Maximum safe operating area.

MIL-PRF-19500/547B

FIGURE 2. Maximum safe operating area continued.

MIL-PRF-19500/547B

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When

actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to

ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity

within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is

available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting

the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents must specify the following:

a. Issue of DODISS to be cited in the solicitation (see 2.2.1).

b. The lead finish as specified (see 3.3.1).

c. Type designation and quality assurance level.

d. Packaging requirements (see 5.1).

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of

award of contract, qualified for inclusion in Qualified Manufacturer's QML-19500 whether or not such products have actually been so

listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the

products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded

contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be

obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.

6.4 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue due to

the extensiveness of the changes.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 11 (Project 5961- 2080)

DLA - CC

Review activities:

Navy - TD

Air Force - 13, 19, 99

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of

requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to

waive any portion of the referenced document(s) or to amend contractual requirements.

I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER

MIL-PRF-19500/547B 2. DOCUMENT DATE (YYMMDD)

990730

3. DOCUMENT TITLE

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6660 AND 2N6661 JAN, JANTX, JANTXV AND

JANS

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial) b. ORGANIZATION

c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)

Commercial

DSN

FAX

7. DATE SUBMITTED

(YYMMDD)

8. PREPARING ACTIVITY

a. Point of contact: Alan Barone, b. TELEPHONE

Commercial DSN FAX EMAIL

614-692-0510 850-0510 614-692-6939 alan_barone@dscc.dla.mil

c. ADDRESS : Defense Supply Center

Columbus, ATTN: DSCC-VAC, 3990 East

Broad Street, Columbus, OH 43216-5000

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221

Telephone (703) 767-6888 DSN 427-68880

DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99