Datasheet.Directory

{"@V(DS) (V) (Test Condition)":"20","C(iss) Max. (F)":"25p","V(GS)off Max. (V)":"3.0","Absolute Max. Power Diss. (W)":"300m","I(GSS) Max. (A)":"250p","I(DSS) Min. (A)":"3.0m","V(BR)DSS (V)":"40","V(BR)GSS (V)":"40","g(fs) Min. (S) Trans. conduct.":"1.0m","I(D) Abs. Drain Current (A)":"50m","Package":"Chip","Military":"N","g(fs) Max, (S) Trans. conduct,":"3.0m"}...

{"Vds - Drain-Source Breakdown Voltage":"20 V","Transistor Polarity":"N-Channel","Gate-Source Cutoff Voltage":"- 3 V","Forward Transconductance - Min":"1000 uS","Brand":"InterFET","Id - Continuous Drain Current":"1 uA","Pd - Power Dissipation":"300 mW","Mounting Style":"Through Hole","Product Category":"JFET","Package / Case":"TO-72-3","Drain-Source Current at Vgs=0":"3 mA","Vgs - Gate-Source Breakdown Voltage":"- 40 V","Configuration":"Single","Technology":"Si","RoHS":"Details","Manufacturer":"InterFET"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Feedback Cap-Max (Crss)":"5 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"4","Number of Elements":"1"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"WIRE","Operating Mode":"DEPLETION","Package Style":"CYLINDRICAL","Transistor Application":"AMPLIFIER","Feedback Cap-Max (Crss)":"5 pF","Transistor Element Material":"SILICON","FET Technology":"JUNCTION","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"4","Number of Elements":"1"}...