Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C VHF Amplifiers Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: 2N3821 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS - 50 - 0.5 Gate Source Voltage Max VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Min Max - 50 Process NJ32 Unit Test Conditions V IG = - 1 A, VDS = OV - 0.1 - 0.1 nA VGS = - 30V, VDS = OV - 0.1 - 0.1 A VGS = - 30V, VDS = OV V VDS = 15V, ID = 50 A V VDS = 15V, ID = 200 A V VDS = 15V, ID = 400 A -6 V VDS = 15V, ID = 0.5 nA 10 mA VDS = 15V, VGS = OV nA VDS = 15V, VGS = - 8V A VDS = 15V, VGS = - 8V TA = 150C VGS = OV, ID = O V f = 1 kHz -2 VGS Gate Source Cutoff Voltage 2N3822 - 50 V 10 mA 300 mW 2mW/C -1 -4 0.5 2.5 2 -4 TA = 150C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transconductance gfs 1500 4500 3000 6500 S VDS = 15V, VGS = OV f = 1 kHz Common Source Forward Transmittance | Yfs | 1500 S VDS = 15V, VGS = OV f = 100 MHz Common Source Output Conductance gos 10 20 S VDS = 15V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 6 6 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 2 2 pF VDS = 15V, VGS = OV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 200 VDS = 15V, VGS = OV f = 10 Hz Noise Figure NF 5 VDS = 15V, VGS = OV RG = 1 M f = 10 Hz 3000 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 200 nV/Hz 5 dB 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-4 B-4 01/99 2N3823, 2N3824 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C VHF Amplifiers Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: 2N3823 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Voltage VGS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Max - 30 -1 4 2N3824 Min Max - 50 V 10 mA 300 mW 2 mW/C Process NJ32 Unit - 50 Test Conditions V IG = - 1 A, VDS = OV - 0.5 - 0.1 nA VGS = - 30V, VDS = OV - 0.5 - 0.1 A VGS = - 30V, VDS = OV - 7.5 V VDS = 15V, ID = 400 A -8 V VDS = 15V, ID = 0.5 nA 20 mA VDS = 15V, VGS = OV 0.1 nA VDS = 15V, VGS = - 8V 0.1 A VDS = 15V, VGS = - 8V TA = 150C 250 VGS = OV, ID = O V f = 1 kHz TA = 150C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transconductance gfs 3500 6500 S VDS = 15V, VGS = OV f = 1 kHz Common Source Forward Transmittance | Yfs | 3200 S VDS = 15V, VGS = OV f = 100 MHz Common Source Output Conductance gos 35 S VDS = 15V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 6 6 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 2 3 pF VDS = 15V, VGS = OV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 200 nV/Hz VDS = 15V, VGS = OV f = 10 Hz Noise Figure NF 6 dB VDS = 15V, VGS = OV RG = 1 M f = 10 Hz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com Databook.fxp 1/14/99 11:29 AM Page B-5 B-5 01/99 2N3954, 2N3955, 2N3956 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Low and Medium Frequency Differential Amplifiers High Input Impedance Amplifiers 2N3954 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85C Case Temperature (both sides) Power Derating (both sides) Min V(BR)GSS - 50 IGSS IG Gate Source Voltage VGS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Max 2N3955 Min Max - 50 2N3956 Min - 50 V 50 mA 250 mW 500 mW 4.3 mW/C Process NJ16 Max Unit V IG = - 1A, VDS = OV pA VGS = - 30V, VDS = OV - 50 Test Conditions - 100 - 100 - 100 - 500 - 500 - 500 nA VGS = - 30V, VDS = OV - 50 - 50 - 50 pA VDS = 20V, ID = 200 A - 250 - 250 - 250 nA VDS = 20V, ID = 200 A - 4.2 - 4.2 - 4.2 V VDS = 20V, ID = 50 A - 0.5 -4 - 0.5 -4 - 0.5 -4 V VDS = 20V, ID = 200 A -1 - 4.5 -1 - 4.5 -1 - 4.5 V VDS = - 20V, IG = 1 nA 2 V VDS = OV, IG = 1 mA 0.5 5 0.5 5 0.5 5 mA VDS = 20V, VGS = OV 1000 3000 1000 3000 1000 3000 2 2 TA = 125C TA = 125C Dynamic Electrical Characteristics Common Source Forward Transconductance g fs 1000 1000 1000 S VDS = 20V, VGS = OV f = 1 kHz S VDS = 20V, VGS = OV f = 200 MHz Common Source Output Capacitance gos 35 35 35 S VDS = 20V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 4 4 4 pF VDS = 20V, VGS = OV f = 1 MHz Drain Gate Capacitance Cdgo 1.5 1.5 1.5 pF Vdg = 10V, IS = OA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 1.2 pF VDS = 20V, VGS = OV f = 1 MHz Noise Figure NF 0.5 0.5 0.5 dB VDS = 20V, VGS = OV, Rg = 10 M f = 100 Hz Differential Gate Current | IG1 - IG2 | 10 10 10 nA VDS = 20V, ID = 200A TA = 125C Saturation Drain Current Ratio IDSS1 /IDSS2 0.95 | VGS1 - VGS2 | 5 10 15 mV VDS = 20V, ID = 200A 0.8 2 4 mV/C VDS = 20V, ID = 200A 1 2.5 5 mV/C VDS = 20V, ID = 200A to = +125C VDS = 20V, ID = 200A f = 1 kHz Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio VGS1 - VGS2 T gfs1 /gfs2 0.97 1 1 TO71 Package Pin Configuration See Section G for Outline Dimensions 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com 0.95 0.97 1 1 0.95 0.97 1 1 VDS = 20V, VGS = OV TA = 25C to = - 55C TA = 25C 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 11:30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Low and Medium Frequency Differential Amplifiers High Input Impedance Amplifiers At 25C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85C Case Temperature (both sides) Power Derating (both sides) 2N3957 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Voltage VGS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Max - 50 2N3958 Min Max - 50 V 50 mA 250 mW 500 mW 4.3 mW/C Process NJ16 Unit - 50 Test Conditions V IG = - 1 A, VDS = OV - 100 - 100 pA VGS = - 30V, VDS = OV - 500 - 500 nA VGS = - 30V, VDS = OV - 50 - 50 pA VDS = 20V, ID = 200 A - 250 - 250 nA VDS = 20V, ID = 200 A - 4.2 - 4.2 V VDS = 20V, ID = 50 A TA = 125C TA = 125C - 0.5 -4 - 0.5 -4 V VDS = 20V, ID = 200 A -1 - 4.5 -1 - 4.5 V VDS = 20V, ID = 1 nA 2 V VDS = O, IG = 1 mA 5 mA VDS = 20V, VGS = OV 1000 3000 1000 3000 S VDS = 20V, VGS = OV f = 1 kHz 1000 S VDS = 20V, VGS = OV f = 200 MHz 2 0.5 5 0.5 Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 35 35 S VDS = 20V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 20V, VGS = OV f = 1 MHz Drain Gate Capacitance Cdgo 1.5 1.5 pF VDS = 10V, IS = OA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 pF VDS = 20V, VGS = OV f = 1 MHz Noise Figure NF 0.5 0.5 dB VDS = 20V, VGS = OV RG = 10 M f = 100 Hz Differential Gate Current | IG1 - IG2 | 10 10 nA VDS = 20V, ID = 200 A TA = 125C Saturation Drain Current Ratio IDSS1 / IDSS2 Differential Gate Source Voltage | VGS1 - VGS2 | Differential Gate Source Voltage with Temperature Transconductance Ratio 0.9 VGS1- VGS2 T gfs1 / gfs2 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 0.9 1000 1 0.85 1 VDS = 20V, VGS = OV 20 25 mV VDS = 20V, ID = 200 A 6 8 mV VDS = 20V, ID = 200 A TA = 25C to - 55C 7.5 10 mV VDS = 20V, ID = 200 A TA = 25C to 125C VDS = 20V, ID = 200 A f = 1 kHz 1 0.85 1 TO71 Package Pin Configuration See Section G for Outline Dimensions 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-7 B-7 01/99 2N3993, 2N3993A P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers High Speed Commutators At 25C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N3993 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS 25 Gate Source Cutoff Voltage VGS(OFF) 4 Drain Saturation Current (Pulsed) IDSS Drain Reverse Current IDGO Drain Cutoff Current ID(OFF) Max 2N3993A Min Max 25 9.5 - 10 4 9.5 - 10 25 V - 10 mA 300 mW 2.4 mW/C Process PJ99 Unit Test Conditions V IG = 1 A, VDS = OV V VDS = - 10V, ID = - 1 A mA VDS = - 10V, VGS = OV - 1.2 - 1.2 nA VDG = - 15V, IS = OA - 1.2 - 1.2 A VDG = - 15V, IS = OA - 1.2 - 1.2 nA VDS = - 10V, VGS = 10 V -1 -1 A VDS = - 10V, VGS = 10 V TA = 150C 150 150 VGS = OV, ID = O A f = 1 kHz 12 mS VDS = - 10V, VGS = OV f = 1 kHz TA = 150C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transmittance | Yfs | Common Source Input Capacitance Ciss 16 12 pF VDS = - 10V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 4.5 3 pF VDS = O, VGS = 10V f = 1 MHz 6 12 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate, 3 Drain, 4 Case www.interfet.com 7 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-8 B-8 01/99 2N3994, 2N3994A P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers High Speed Commutators At 25C free air temperature: Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N3994 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS 25 Gate Source Cutoff Voltage VGS(OFF) 1 Drain Saturation Current (Pulsed) IDSS Drain Reverse Current IDGO Drain Cutoff Current ID(OFF) Max 2N3994A Min Max Process PJ99 Unit 25 5.5 -2 1 5.5 -2 25 V 25 V - 10 mA 300 mW 2.4 mW/C Test Conditions V IG = 1 A, VDS = OV V VDS = - 10V, ID = - 1 A mA VDS = - 10V, VGS = OV - 1.2 - 1.2 nA VDG = - 15V, IS = OA - 1.2 - 1.2 A VDG = - 15V, IS = OA - 1.2 - 1.2 nA VDS = - 10V, VGS = 10V -1 -1 A VDS = - 10V, VGS = 10V TA = 150C 300 300 VGS = OV, ID = O A f = 1 kHz 10 mS VDS = - 10V, VGS = OV f = 1 kHz TA = 150C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transmittance | Yfs | Common Source Input Capacitance Ciss 16 12 pF VDS = - 10V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 3.5 pF VDS = O, VGS = 10V f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 4 10 5 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Gate, 3 Drain, 4 Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175C) 2N4117 2N4117A At 25C free air temperature: Static Electrical Characteristics Min Max - 40 2N4118 2N4118A Min Max Gate Source Breakdown Voltage V(BR)GSS - 40 Gate Reverse Current 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A IGSS Gate Source Cutoff Voltage VGS(OFF) - 0.6 - 1.8 -1 -3 Drain Saturation Current (Pulsed) 2N4117, 2N4118, 2N4119 2N4117A, 2N4118A, 2N4119A IGSS 0.03 0.09 0.08 0.015 0.09 70 210 2N4119 2N4119A Min Max - 40 - 40 V 50 mA 300 mW 2 mW/C Process NJ01 Unit Test Conditions V IG = - 1A, VDS = OV - 10 - 10 - 10 pA VGS = - 20V, VDS = OV -1 -1 -1 pA VGS = - 20V, VDS = OV -2 -6 V VDS = 10V, ID = 1 nA 0.24 0.2 0.6 mA VDS = 10V, VGS = OV 0.08 0.24 0.2 0.6 mA VDS = 10V, VGS = OV 80 250 100 330 S VDS = 10V, VGS = OV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 3 5 10 S VDS = 10V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 3 3 3 pF VDS = 10V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.5 1.5 1.5 pF VDS = 10V, VGS = OV f = 1 MHz TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-10 B-10 01/99 2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Mixers Oscillators VHF Amplifiers Small Signal Amplifiers 2N4220 2N4220A NJ16 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 150 C) Min V(BR)GSS Gate Reverse Current IGSS Gate Source Voltage VGS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max - 30 - 0.5 (50) 2N4221 2N4221A NJ16 Min Max - 30 2N4222 2N4222A NJ32 Min Process Max Unit Test Conditions V IG = - 1A, VDS = OV - 0.1 - 0.1 - 0.1 nA VGS = - 15V, VDS = OV - 0.1 - 0.1 - 0.1 A VGS = - 15V, VDS = OV - 2.5 - 1 -5 -2 -6 (50) (200) (200) (500) (500) V A VDS = 15V, ID = ( ) -8 V VDS = 15V, ID = 0.1 nA -4 - 30 - 30 V 10 mA 300 mW 2 mW/C -6 TA = 150C 0.5 3 2 6 5 15 mA VDS = 15V, VGS = OV 4000 2000 5000 2500 6000 S VDS = 15V, VGS = OV f = 1 kHz S VDS = 15V, VGS = OV f = 100 MHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 1000 Common Source Forward Transmittance | Yfs | 750 Common Source Output Conductance gos 10 20 40 S VDS = 15V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 6 6 6 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 2 2 2 pF VDS = 15V, VGS = OV f = 1 MHz Noise Figure 2N4220A, 2N4221A, 2N4222A NF 2.5 2.5 2.5 dB VDS = 15V, VGS = OV RG = 1 M f = 100 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 750 750 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-11 B-11 01/99 2N4338, 2N4339 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers Small Signal Amplifiers Voltage-Controlled Resistors Current Limiters & Regulators At 25C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175C) 2N4339 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS - 50 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Drain Source ON Resistance rds(on) Common Source Forward Transconductance gfs Common Source Output Conductance gos 5 Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Noise Figure 2N4339 Min Max - 50 - 50 V 50 mA 300 mW 2mW/C Process NJ16 Unit Test Conditions V IG = - 1 A, VDS = OV - 100 - 100 pA VGS = - 30V, VDS = OV - 100 - 100 nA VGS = - 30V, VDS = OV - 0.6 - 1.8 V VDS = 15V, ID = 0.1 A 1.5 mA VDS = 15V, VGS = OV 0.05 (- 5) 0.05 (- 5) nA V VDS = 15V, VGS = ( ) 2500 1700 VGS = OV, ID = O A f = 1 kHz 600 1800 800 2400 S VDS = 15V, VGS = OV f = 1 kHz 15 S VDS = 15V, VGS = OV f = 1 kHz 7 7 pF VDS = 15V, VGS = OV f = 1 MHz Crss 3 3 pF VDS = 15V, VGS = OV f = 1 MHz NF 1 1 dB VDS = 15V, VGS = OV RG = 1 M, BW = 200 Hz f = 1 kHz - 0.3 -1 0.2 0.6 0.5 TA = 150C Dynamic Electrical Characteristics TO18 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-12 B-12 01/99 2N4340, 2N4341 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Small Signal Amplifiers Current Regulators Voltage-Controlled Resistors At 25C free air temperature: Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 175C) 2N4340 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS - 50 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) -1 -3 Drain Saturation Current (Pulsed) IDSS 1.2 3.6 Drain Cutoff Current ID(OFF) 0.05 (- 5) Drain Source ON Resistance rds(on) 1500 Common Source Forward Transconductance gfs Common Source Output Conductance gos 30 Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Noise Figure 2N4341 Min Max - 50 V 50 mA 300 mW 2mW/C Process NJ16 Unit - 50 Test Conditions V IG = - 1 A, VDS = OV - 100 - 100 pA VGS = - 30V, VDS = OV - 100 - 100 nA VGS = - 30V, VDS = OV -2 -6 V VDS = 15V, ID = 0.1 A 3 9 mA VDS = 15V, VGS = OV 0.07 nA (- 10) V VDS = 15V, VGS = ( ) TA = 150C Dynamic Electrical Characteristics 800 VGS = OV, ID = O A f = 1 kHz 1300 3000 2000 4000 S VDS = 15V, VGS = OV f = 1 kHz 60 S VDS = 15V, VGS = OV f = 1 kHz 7 7 pF VDS = 15V, VGS = OV f = 1 MHz Crss 3 3 pF VDS = 15V, VGS = OV f = 1 MHz NF 1 1 dB VDS = 15V, VGS = OV RG = 1 M, BW = 200 Hz f = 1 kHz TO18 Package Surface Mount Dimensions in Inches (mm) SMP4340, SMP4341 Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Low On Resistance Analog Switches Choppers Commutators 2N4391 At 25C free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Max - 40 2N4392 Min Max - 40 - 100 2N4393 Min - 200 Unit Test Conditions V IG = - 1A, VDS = OV - 100 pA VGS = - 20V, VDS = OV - 200 nA VGS = - 20V, VDS = OV - 0.5 -3 V VDS = - 20V, ID = 1 nA 1 V IG = 1 mA, VDS = OV 5 30 mA VDS = 20V, VGS = OV 100 pA VDS = 20V, VGS = - 5V 200 nA VDS = 20V, VGS = - 5V 100 pA VDS = 20V, VGS = - 7V 200 nA VDS = 20V, VGS = - 7V 100 pA VDS = 20V, VGS = - 12V 200 nA VDS = 20V, VGS = - 12V V VGS = OV, ID = 3 mA V VGS = OV, ID = 6 mA V VGS = OV, ID = 12 mA VGS = OV, ID = 1 mA -4 - 10 50 150 - 200 Process NJ132 Max - 40 - 100 - 40 V 50 mA 1.8 W 12 mW/C -2 -5 25 75 1 1 ID(OFF) 0.4 Drain Source ON Voltage VDS(ON) 0.4 Static Drain Source ON Resistance rDS(ON) 30 Drain Source ON Resistance rds(on) Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Crss 0.4 TA = 150C TA = 150C TA = 150C TA = 150C 60 100 30 60 100 VGS = OV, ID = OA f = 1 kHz 14 14 14 pF VDS = 20V, VGS = OV f = 1 kHz 3.5 pF VDS = OV, VGS = - 5V f = 1 kHz pF VDS = OV, VGS = - 7V f = 1 kHz pF VDS = OV, VGS = - 12V f = 1 kHz ns VDD = 10V, VGS(ON) = OV Dynamic Electrical Characteristics 3.5 3.5 Switching Characteristics Turn ON Delay Time td(on) 15 Rise Time tr 5 5 5 ns Turn OFF Delay Time td(off) 20 35 50 ns ID(ON) 12 6 3 Fall Time tf 15 20 30 ns VGS(OFF) - 12 -7 -5 TO18 Package Surface Mount See Section G for Outline Dimensions SMP4391, SMP4392, SMP4393 15 15 2N4391 2N4392 2N4393 Pin Configuration 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 mA V Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor Mixers VHF Amplifiers Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation Power Derating At 25C free air temperature: 2N4416 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max - 30 2N4416 2N4416A Min Max - 30 V 10 mA 300 mW 2 mWC 2N4416A - 35 V 10 mA 300 mW 2 mW/C Process NJ26 Unit - 35 Test Conditions V IG = - 1A, VDS = OV - 0.1 - 0.1 nA VGS = - 20V, VDS = OV - 0.1 - 0.1 A VGS = - 20V, VDS = OV TA = 150C -6 - 2.5 -6 V VDS = 15V, ID = 1 nA 15 5 15 mA VDS = 15V, VGS = OV 4500 7500 4500 7500 S VDS = 15V, VGS = OV f = 1 kHz 4000 S VDS = 15V, VGS = OV f = 400 MHz 5 Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance gfs gos 4000 50 50 S VDS = 15V, VGS = OV f = 1 kHz 75 75 S VDS = 15V, VGS = OV f = 100 MHz 100 100 S VDS = 15V, VGS = OV f = 400 MHz Common Source Input Capacitance Ciss 4 4 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Output Capacitance Coss 2 2 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 0.8 0.8 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Input Conductance gis 100 100 S VDS = 15V, VGS = OV f = 100 MHz 1000 1000 S VDS = 15V, VGS = OV f = 400 MHz Common Source Input Susceptance bis 2500 2500 S VDS = 15V, VGS = OV f = 100 MHz 10000 10000 S VDS = 15V, VGS = OV f = 400 MHz Common Source Output Susceptance bos 1000 1000 S VDS = 15V, VGS = OV f = 100 MHz 4000 4000 S VDS = 15V, VGS = OV f = 400 MHz Common Source Power Gain Gps Noise Figure NF 18 18 dB VDS = 15V, ID = 5mA f = 100 MHz 10 10 dB VDS = 15V, ID = 5mA f = 400 MHz VDS = 15V, ID = 5mA RG = 1k f = 100 MHz 2 2 dB 4 4 dB TO72 Package Surface Mount See Section G for Outline Dimensions SMP4416, SMP4416A f = 400 MHz Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case Note: rf parameters guaranteed, but not 100% tested. 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:30 AM Page B-15 B-15 01/99 2N4856, 2N4857, 2N4858, 2N4859, 2N4860, 2N4861 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Commutators Analog Switches 2N4856, 2N4857, 2N4858 - 40 V - 40 V 1.8 W 10 mW/C 50 mA Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Power Derating Continuous Forward Gate Current 2N4856 2N4859 At 25C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage 2N4856, 2N4857, 2N4858 2N4859, 2N4860, 2N4861 V(BR)GSS Gate Reverse Current 2N4856, 2N4857, 2N4858 IGSS Gate Reverse Current 2N4859, 2N4860, 2N4861 IGSS Gate Source Cutoff Voltage VGS(OFF) -4 Drain Saturation Current (Pulsed) IDSS 50 Drain Cutoff Current ID(OFF) Drain Source ON Voltage VDS(ON) Max 2N4857 2N4860 Min Max 2N4858 2N4861 Min 2N4859, 2N4860, 2N4861 - 30 V - 30 V 1.8 W 10 mW/C 50 mA Process NJ132 Max Unit Test Conditions - 40 - 40 - 40 V IG = - 1 A, VDS = OV - 30 - 30 - 30 V IG = - 1 A, VDS = OV - 250 - 250 - 250 pA VGS = - 20V, VDS = OV - 500 - 500 - 500 nA VGS = - 20V, VDS = OV - 250 - 250 - 250 pA VGS = - 15V, VDS = OV - 500 - 500 - 500 nA VGS = - 15V, VDS = OV - 10 -2 -6 - 0.8 -4 V VDS = 15V, ID = 0.5 nA 20 100 8 80 mA VDS = 15V, VGS = OV 250 250 250 pA VDS = 15V, VGS = - 10V 500 500 500 nA VDS = 15V, VGS = - 10V 0.75 (20) 0.5 (10) 0.5 (5) V (mA) TA = 150C TA = 150C TA = 150C VGS = OV, ID = ( ) Dynamic Electrical Characteristics Common Source ON Resistance rds(on) 25 40 60 VGS = OV, ID = O A f = 1 kHz Common Source Input Capacitance Ciss 18 18 18 pF VDS = OV, VGS = - 10V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 8 8 8 pF VDS = OV, VGS = - 10V f = 1 MHz td(on) 6 (20) [-10] 6 (10) [- 6] 10 (5) [- 4] ns (mA) [V] tr 3 (20) [-10] 4 (10) [- 6] 10 (5) [- 4] ns (mA) [V] td(off) 25 (20) [-10] 50 (10) [- 6] 100 (5) [- 4] ns (mA) [V] Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time TO18 Package Surface Mount See Section G for Outline Dimensions SMP4856, SMP4857, SMP4858, SMP4859, SMP4860, SMP4861 Pin Configuration VDD = 10V, VGS = OV ID(ON) = ( ) VGS(OFF) = [ ] (2N4856, 2N4859) RL = 465 (2N4857, 2N4860) RL = 953 (2N4858, 2N4861) RL = 1910 1 Source, 2 Drain, 3 Gate &Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 12:00 PM Page B-16 B-16 01/99 2N4856A, 2N4857A, 2N4858A, 2N4859A, 2N4860A, 2N4861A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Commutators Analog Switches Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Dissipation Continuous Forward Gate Current Power Derating 2N4856A 2N4859A At 25C free air temperature: Static Electrical Characteristics Min Max 2N4856A, 2N4857A, 2N4858A - 40 V - 40 V 1.8 W 50 mA 10 mA/C 2N4857A 2N4860A Min Max 2N4858A 2N4861A Min 2N4859A, 2N4860A, 2N4861A - 30 V - 30 V 1.8 W 50 mA 10 mA/C Process NJ132 Max Unit Test Conditions Gate Source Breakdown Voltage 2N4856A, 2N4857A, 2N4858A V(BR)GSS - 40 - 40 - 40 V IG = - 1 A, VDS = OV Gate Source Breakdown Voltage 2N4859A, 2N4860A, 2N4861A V(BR)GSS - 30 - 30 - 30 V IG = - 1 A, VDS = OV Gate Reverse Current 2N4856A, 2N4857A, 2N4858A IGSS - 250 - 250 - 250 pA VGS = - 20V, VDS = OV - 500 - 500 - 500 nA VGS = - 20V, VDS = OV - 250 - 250 - 250 pA VGS = - 15V, VDS = OV - 500 nA VGS = - 15V, VDS = OV -4 V VDS = 15V, ID = 0.5 nA Gate Reverse Current 2N4859A, 2N4860A, 2N4861A IGSS Gate Source Cutoff Voltage VGS(OFF) -4 Drain Saturation Current (Pulsed) IDSS 50 Drain Cutoff Current ID(OFF) Drain Source ON Voltage VDS(ON) - 500 - 10 - 500 -2 20 -6 - 0.8 100 8 80 mA VDS = 15V, VGS = OV 250 250 250 pA VDS = 15V, VGS = - 10V 500 500 500 nA VDS = 15V, VGS = - 10V 0.75 (20) 0.5 (10) 0.5 (5) V (mA) VGS = OV, ID = ( ) TA = 150C TA = 150C TA = 150C Dynamic Electrical Characteristics Common Source ON Resistance rds(on) 25 40 60 VGS = OV, ID = O A f = 1 kHz Common Source Input Capacitance Ciss 10 10 10 pF VDS = OV, VGS = - 10V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 4 3.5 3.5 pF VDS = OV, VGS = - 10V f = 1 MHz td(on) 5 (20) [-10] 6 (10) [- 6] 8 (5) [- 4] ns (mA) [V] tr 3 (20) [-10] 4 (10) [- 6] 8 (5) [- 4] ns (mA) [V] 25 (20) [-10] 40 (10) [- 6] 80 (5) [- 4] ns (mA) [V] Switching Characteristics Turn ON Delay Time Rise Time Turn OFF Delay Time td(off) VDD = 10V, VGS = OV ID(ON) = ( ) VGS(OFF) = [ ] (2N4856A, 2N4859A) RL = 464 (2N4857A, 2N4860A) RL = 953 (2N4858A, 2N486A1) RL = 1910 TO18 Package Surface Mount See Section G for Outline Dimensions SMP4856A, SMP4857A, SMP4858A, SMP4859A, SMP4860A, SMP4861A Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 12:00 PM Page B-17 B-17 01/99 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range 2N4867 2N4867A At 25C free air temperature: Static Electrical Characteristics Min Max - 40 2N4868 2N4868A Min Max - 40 2N4869 2N4869A Min Max - 40 - 40 V 50 mA 300mW 1.7 mW/C - 65C to + 200C Process NJ16 Unit V Test Conditions Gate Source Breakdown Voltage V(BR)GSS IG = - 1A, VDS = OV Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) - 0.7 -2 -1 -3 - 1.8 -5 V VDS = 20V, ID = 1 A Drain Saturation Current (Pulsed) IDSS 0.4 1.2 1 3 2.5 7.5 mA VDS = 20V, VGS = OV Common Source Forward Transconductance gfs 700 2000 1000 3000 1300 4000 S VDS = 20V, VGS = OV f = 1 kHz Common Source Output Conductance gos 1.5 4 10 S VDS = 20V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 25 25 25 pF VDS = 20V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 5 5 pF VDS = 20V, VGS = OV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N Noise Figure NF - 0.25 - 0.25 - 0.25 nA VGS = - 30V, VDS = OV - 0.25 - 0.25 - 0.25 A VGS = - 30V, VDS = OV TA = 150C Dynamic Electrical Characteristics 20 20 20 nV/HZ VDS = 10V, VGS = OV f = 10 Hz 10 10 10 nV/HZ VDS = 10V, VGS = OV f = 1 kHz VDS = 10V, VGS = OV f = 1 kHz 1 1 1 dB TO72 Package Surface Mount Dimensions in Inches (mm) SMP4867, SMP4867A, SMP4868, SMP4868A, SMP4869, SMP4869A Pin Configuration (2N4867, 68, 69) RG = 20 k (2N4867A, 68A, 69A) RG = 5 k 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: 2N5020 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GDO Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max 25 2N5021 Min Process PJ32 Unit 25 1.5 - 0.3 - 1.2 Test Conditions V IG = 1A, VDS = OV 1 nA VGS = 15V, VDS = OV 0.5 2.5 V VDS = - 15V, ID = 1 nA -1 - 3.5 mA VDS = - 15V, VGS = OV 1.5 6 mS VDS = - 15V, VGS = OV 1 0.3 Max - 50 V 50 mA 500 mW 4 mW/C - 65C to + 200C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 20 20 S VDS = - 15V, VGS = OV Common Source Input Capacitance Ciss 25 25 pF VDS = - 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 7 7 pF VDS = - 15V, VGS = OV f = 1 MHz 1 3.5 TO18 Package Surface Mount Dimensions in Inches (mm) SMP5020, SMP5021 Pin Configuration 1 Source 1, 2 Gate & Case, 3 Drain 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:31 AM Page B-19 B-19 01/99 2N5114, 2N5115, 2N5116 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range 2N5114 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Max 30 2N5115 Min Max 30 500 1 10 - 30 - 90 Min 1 3 6 -1 1 -1 - 15 - 60 Unit V IG = - 1A, VDS = OV 500 pA VGS = 20V, VDS = OV 1 A VGS = 20V, VDS = OV 4 V VDS = - 15V, IG = - 1 nA -1 -5 - 25 - 500 -1 Drain Cutoff Current - 500 ID(OFF) -1 VDS(ON) Test Conditions V VDS = OV, IG = - 1 mA mA VGS = OV, VDS = - 18V mA VGS = OV, VDS = - 15V pA VDS = - 15V, VGS = 12 V A VDS = - 15V, VGS = 12 V pA VDS = - 15V, VGS = 7V A VDS = - 15V, VGS = 7V - 500 pA VDS = - 15V, VGS = 5V -1 A VDS = - 15V, VGS = 5V V VGS = OV, ID = - 15 mA - 1.3 Drain Source ON Voltage Process PJ99 Max 30 500 5 2N5116 - 40 V 50 mA 500mW 3 mW/C - 65C to + 200C - 0.8 V VGS = OV, ID = - 7 mA - 0.6 V VGS = OV, ID = - 3 mA TA = 150C TA = 150C TA = 150C TA = 150C rDS(ON) 75 100 150 VGS = OV, ID = - 1 mA Drain Source ON Resistance rds(on) 75 100 150 VGS = OV, ID = OA f = 1 kHz Common Source Input Capacitance Ciss 25 25 27 pF VDS =- 15V, VGS = OV f = 1 MHz pF VDS = OV, VGS = 12V f = 1 MHz pF VDS = OV, VGS = 7 V f = 1 MHz pF VDS = OV, VGS = 5V f = 1 MHz VDD VGG RL RG ID(ON) Static Drain Source ON Resistance Dynamic Electrical Characteristics 7 Common Source Reverse Transfer Capacitance Crss 7 7 Switching Characteristics 2N5114 2N5115 2N5116 Turn ON Delay Time td(on) 6 10 25 ns Rise Time tr 10 20 35 ns Turn OFF Delay Time td(off) 6 8 20 ns Fall Time tf 15 30 60 ns TO18 Package Pin Configuration See Section G for Outline Dimensions 1 Source 1, 2 Gate & Case, 3 Drain www.interfet.com - 10 20 130 100 - 15 -6 12 910 220 -7 -6 8 2000 390 -3 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 V V mA Databook.fxp 1/13/99 2:09 PM Page B-20 B-20 01/99 2N5397, 2N5398 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Low-Noise High Power Gain High Transconductance Mixers Oscillators VHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Drain Source Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: 2N5397 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS - 25 Gate Source Forward Voltage VGS(F) Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) -1 -6 Drain Saturation Current (Pulsed) IDSS 10 Common Source Forward Transconductance gfs Common Source Forward Transfer Admittance | Yfs | Common Source Output Conductance | gos | Common Source Input Admittance | Yos | Common Source Input Conductance 2N5398 Min Max - 25 V 25 V 10 mA 300 mW 1.7 mW/C Process NJ26L Unit - 25 Test Conditions V IG = - 1 A, VDS = OV 1 1 V IG = 1 mA, VDS = OV - 0.1 - 0.1 nA VGS = - 15V, VDS = OV - 0.1 - 0.1 A VGS = - 15V, VDS = OV -1 -6 V VDS = 10V, ID = 1 nA 30 5 40 mA VDS = 10V, VGS = OV 5.5 9 5 10 mS VDG = 10V, ID = 10 mA f = 450 MHz 6 10 5.5 10 mS VDS = 10V, ID = 10 mA f = 1 kHz 0.4 0.5 mS VDG = 10V, ID = 10 mA f = 450 MHz 0.2 0.4 mS VDS = 10V, ID = 10 mA f = 1 kHz gis 2 3 mS VDG = 10V, ID = 10 mA f = 450 MHz Common Source Input Capacitance Ciss 5 5.5 pF VDG = 15V, VGS = OV f = 1 kHz Common Source Reverse Transfer Capacitance Crss 1.2 1.3 pF VDG = 15V, VGS = OV f = 1 kHz TA = 150C Dynamic Electrical Characteristics TO72 Package Surface Mount Dimensions in Inches (mm) SMP5397, SMP5398 Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-21 B-21 01/99 2N5460, 2N5461, 2N5462 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at 25C Audio Amplifiers General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating 2N5460 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Voltage VGS Drain Saturation Current (Pulsed) IDSS Max 40 2N5461 Min Max 40 5 6 0.8 4.5 -1 -5 1 4 2N5462 Min 1 1 7.5 0.8 4.5 -2 -9 1.8 Process PJ32 Max Unit V IG = 10A, VDS = OV 5 nA VGS = 20V, VDS = OV 1 A VGS = 20V, VDS = OV 9 V VDS = - 15V, ID = - 1 A V VDS = - 15V, ID = - 100 A V VDS = - 15V, ID = - 200 A VDS = - 15V, ID = - 400 A 40 5 1 0.75 40 V - 10 mA 310 mW 2.8 mW/C 1.5 6 V -4 - 16 mA Test Conditions TA = 100C VDS = - 15V, VGS = OV Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Common Source Forward Transadmittance | Yfs | 2 Common Source Output Admittance | Yos | 75 Common Source Input Capacitance Ciss 7 Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage Noise Figure 0.8 0.4 k VGS = OV, ID = O A f = 1 kHz 6 mS VDS = - 15V, VGS = O V f = 1 kHz 75 75 S VDS = - 15V, VGS = O V f = 1 kHz 7 7 pF VDS = - 15V, VGS = OV f = 1 MHz 2 2 2 pF VDS = - 15V, VGS = OV f = 1 MHz e N 2.5 2.5 2.5 dB VDS = - 15V, VGS = OV f = 100 Hz, BW = 1 Hz NF 115 115 115 nV/Hz VDS = - 15V, VGS = OV, RG = 1M f = 100 Hz 1.5 TO226AA Package Surface Mount Dimensions in Inches (mm) SMP5460, SMP5461, SMP5462 5 2 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-22 B-22 01/99 2N5484, 2N5485, 2N5486 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C VHF/UHF Amplifiers Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Device Power Dissipation Power Derating 2N5484 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Max - 25 2N5485 Min Max - 25 -1 2N5486 Min - 0.2 - 0.2 Process NJ26 Max Unit V IG = 1A, VDS = OV -1 nA VGS = - 20V, VDS = OV - 25 -1 - 25 V - 25 V 360 mW 3.27 mW/C Test Conditions - 0.2 A VGS = - 20V, VDS = OV - 0.3 -3 - 0.5 -4 -2 -6 V VDS = 15V, ID = 10 nA TA = 100C 1 5 4 10 8 20 mA VDS = 15V, VGS = OV S VDS = 15V, VGS = OV S VDS = 15V, VGS = OV f = 400 MHz S VDS = 15V, VGS = O V f = 1 kHz Dynamic Electrical Characteristics Forward Transconductance Re(Yfs) Common Source Forward Transadmittance Yfs Input Admittance Re(Yis) Output Conductance Re(Yos) Common Source Output Admittance Yos Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Output Capacitance 2500 3000 3000 6000 3500 3500 7000 4000 8000 100 f = 100 MHz S VDS = 15V, VGS = OV f = 100 MHz 1000 1000 S VDS = 15V, VGS = OV f = 400 MHz S VDS = 15V, VGS = OV f = 100 MHz 100 100 S VDS = 15V, VGS = OV f = 400 MHz 50 60 75 S VDS = 15V, VGS = OV f = 1 MHz 5 5 5 pF VDS = 15V, VGS = OV f = 1 MHz Crss 1 1 1 pF VDS = 15V, VGS = OV f = 1 MHz Coss 2 2 2 pF VDS = 15V, VGS = OV f = 1 MHz 75 TO226AA Package Surface Mount Dimensions in Inches (mm) SMP5484, SMP5485, SMP5486 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: 2N5911 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Max - 25 2N5912 Min Max - 25 50 mA 500 mW 4 mWC -65C to + 200C Process NJ30L or NJ36D Unit Test Conditions V IG = - 1 A, VDS = OV - 100 - 100 pA VGS = - 15V, VDS = OV - 250 - 250 nA VGS = - 15V, VDS = OV - 100 - 100 pA VDG = 10V, ID = 5 mA - 100 - 100 nA VDG = 10V, ID = 5 mA Gate Source Cutoff Voltage VGS(OFF) -1 -5 -1 -5 V VDS = 10V, ID = 1 nA Gate Source Voltage VGS - 0.3 -4 - 0.3 -4 V VDS = 10V, ID = 5 mA Drain Saturation Current (Pulsed) IDSS 7 40 7 40 mA VDS = 10V, VGS = OV TA = 150C TA = 125C Dynamic Electrical Characteristics 5000 10000 5000 10000 S VDG = 10V, ID = 5 mA f = 1 kHz 5000 10000 5000 10000 S VDG = 10V, ID = 5 mA f = 100 MHz S VDG = 10V, ID = 5 mA f = 1 kHz S VDG = 10V, ID = 5 mA f = 100 MHz pF VDG = 10V, ID = 5 mA f = 1 MHz 1.2 pF VDG = 10V, ID = 5 mA f = 1 MHz 20 20 nV/Hz VDG = 10V, ID = 5 mA f = 10 kHz 1 1 dB VDG = 10V, ID = 5 mA RG = 100 K f = 10 kHz 20 nA VDG = 10V, ID = 5 mA TA = 125C Common Source Forward Transconductance gfs Common Source Output Conductance gos 100 100 150 150 Common Source Input Capacitance Ciss 5 5 Common Source Reverse Transfer Capacitance Crss 1.2 Equivalent Short Circuit Input Noise Voltage e N Noise Figure NF Differential Gate Current Saturation Drain Current Ratio IG1 - IG2 IDSS1 / IDSS2 Differential Gate Source Voltage | VGS1 - VGS2 | Gate Source Voltage Differential Drift Transconductance Ratio 20 0.95 VGS1- VGS2 T gfs1 / gfs2 0.9 1 0.95 1 VDG = 20V, VGS = OV 10 15 mV VDG = 10V, ID = 5 mA 20 40 mV VDG = 10V, ID = 5 mA TA = 25C, TB = 125C 20 40 mV VDG = 10V, ID = 5 mA TA = - 55C, TB = 25C VDG = 10V, ID = 5 mA f = 1 kHz 1 0.85 1 SOIC-8 Package TO78 Package Surface Mount See Section G for Outline Dimensions See Section G for Outline Dimensions SMP5911, SMP5912 Pin Configuration Pin Configuration 1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted 1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: 2N6449 Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Max - 300 2N6450 Min Max Process NJ42 Unit - 200 IG = - 10 A, VDS = OV nA VGS = - 150V, VDS = OV nA VGS = - 100V, VDS = OV A VGS = - 150V, VDS = OV TA = 150C - 100 A VGS = - 100V, VDS = OV TA = 150C - 100 IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Test Conditions V - 100 Gate Reverse Current 2N6449 2N6450 - 300 V - 200 V - 300 V - 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/C 6.4 mW/C - 100 -2 - 15 -2 - 15 V VDS = 30V, ID = 4 nA IDSS 2 10 2 10 mA VDS = 30V, VGS = OV Common Source Forward Transfer Admittance Yfs 0.5 3 0.5 3 mS VDS = 30V, VGS = OV f = 1 kHz Common Source Output Conductance Yos 100 100 S VDS = 30V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 20 20 pF VDS = 30V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 2.5 2.5 pF VDS = 30V, VGS = OV f = 1 MHz Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TO39 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-25 B-25 01/99 2N6451, 2N6452 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers Low-Noise, High Gain Amplifiers Low-Noise Preamplifiers At 25C free air temperature: 2N6451 Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS Max - 20 2N6452 Min Max - 25 - 0.1 Gate Reverse Current - 0.5 IGSS - 0.2 -1 Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS - 0.5 - 3.5 - 0.5 - 3.5 2N6451 2N6452 - 20 V - 25 V - 20 V - 25 V 10 mA 10 mA 360 mW 360 mW 2.88 mW/C 2.88 mW/C Process NJ132L Unit Test Conditions V IG = - 1 A, VDS = OV nA VGS = - 10V, VDS = OV nA VGS = - 15V, VDS = OV A VGS = - 10V, VDS = OV TA = 125C A VGS = - 15V, VDS = OV TA = 125C V VDS = 10V, ID = 0.5 nA 5 20 5 20 mA VDS = 10V, VGS = OV 15 30 15 30 mS VDS = 10V, ID = 5 mA f = 1 kHz mS VDS = 10V, ID = 15 mA f = 1 kHz S VDS = 10V, ID = 5 mA f = 1 kHz S VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transmittance | Yfs | Common Source Output Conductance | Yos | Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage e N Noise Figure NF 50 25 5 25 5 5 10 nV/Hz VDS = 10V, ID = 5 mA f = 10 kHz 3 8 nV/Hz VDS = 10V, ID = 5 mA f = 1 kHz 1.5 2.5 dB VDS = 10V, ID = 5 mA RG = 10 k f = 10 Hz TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 50 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-26 B-26 01/99 2N6453, 2N6454 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers Low-Noise, High Gain Amplifiers Low-Noise Preamplifiers At 25C free air temperature: 2N6453 Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS Max - 20 2N6454 Min Max Process NJ132L Unit - 25 IG = - 1 A, VDS = OV nA VGS = - 10V, VDS = OV nA VGS = - 15V, VDS = OV A VGS = - 10V, VDS = OV TA = 125C -1 A VGS = - 15V, VDS = OV TA = 125C - 0.75 - 5 - 0.75 - 5 V VDS = 10V, ID = 0.5 nA mA VDS = 10V, VGS = OV mS VDS = 10V, ID = 5 mA f = 1 kHz mS VDS = 10V, ID = 15 mA f = 1 kHz S VDS = 10V, ID = 5 mA f = 1 kHz S VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz pF VDS = 10V, ID = 5 mA f = 1 kHz pF VDS = 10V, ID = 15 mA f = 1 kHz - 0.5 IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Test Conditions V - 0.1 Gate Reverse Current 2N6453 2N6454 - 20 V - 25 V - 20 V - 25 V 10 mA 10 mA 360 mW 360 mW 2.88 mW/C 2.88 mW/C - 0.2 15 50 15 50 Dynamic Electrical Characteristics Common Source Forward Transmittance | Yfs | Common Source Output Conductance | Yos | Common Source Input Capacitance Ciss Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage e N Noise Figure NF 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 20 40 100 25 20 40 100 25 5 5 5 10 nV/Hz VDS = 10V, ID = 5 mA f = 10 kHz 3 8 nV/Hz VDS = 10V, ID = 5 mA f = 1 kHz 1.5 2.5 dB VDS = 10V, ID = 5 mA RG = 10 k f = 10 Hz TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-27 B-27 01/99 2N6550 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA =25C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current Continuous Device Power Dissipation Power Derating Junction Temperature (Operating & Storage) At 25C free air temperature: 2N6550 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Leakage Current IGSS Zero Gate Voltage Drain Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Typ - 20 V 50 mA 400 mW 2.3 mW/C - 65C to +200C Process NJ450L Max - 20 Unit Test Conditions V IG = 10 A, VDS = OV -3 nA VGS = - 10V, VDS = OV - 0.1 A VGS = - 10V, VDS = OV 250 mA VDS = 10V, VGS = O V - 0.3 -3 V VDS = 10V, ID = 0.1 mA 25 150 mS VDS = 10V, ID = 10 mA f = 1 kHz 150 S VDS = 10V, ID = 10 mA f = 1 kHz 10 100 TA = 85C Dynamic Electrical Characteristics Transconductance gfs Common Source Output Conductance |Yos | Common Source Input Capacitance Ciss 30 35 pF VDS = 10V, ID = 10 mA f = 140 kHz Common Source Reverse Transfer Capacitance Crss 10 20 pF VDS = 10V, VDS = OV f = 140 kHz 1.4 2 nV/Hz VDS = 5V, ID = 10 mA f = 1 kHz 6 10 nV/Hz VDS = 5V, ID = 10 mA f = 10 Hz e N Total 0.4 0.6 Vrms VDS = 5V, ID = 10 mA f = 10 kHz to 20 kHz iN 0.1 pA/Hz RS < 100 K f = 1 kHz Equivalent Short Circuit Input Noise Voltage Equivalent Open Circuit Input Noise Current e N TO46 Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-28 B-28 01/99 IF140, IF140A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Low-Noise, High Gain Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IF140 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage IF140A Max - 20 Min Max - 20 V 10 mA 375 mW 3 mW/C - 65C to 200C Process NJ14AL Unit - 20 Test Conditions V IG = - 1 A, VDS = OV - 0.1 - 0.1 nA VGS = - 15V, VDS = OV - 0.2 - 0.2 nA VGS = - 15V, VDS = OV VGS(OFF) -6 -6 V VDS = 15V, ID = 5 nA Gate Source Voltage VGS -5 -6 V VDS = 15V, ID = 50 A Gate Source Forward Voltage VGS(F) 1 V VDS = O, IG = 1 mA Drain Saturation Current (Pulsed) IDSS 15 mA VDS = 15V, VGS = OV mS VDS = 15V, VGS = OV f = 1 kHz - 2.5 1 5 15 5 TA = 150C Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs 4.5 4.5 Common Source Output Conductance Yos 0.05 0.05 S VDS = 15V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 3 3 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 0.6 0.6 pF VDS = 15V, VGS = OV f = 1 MHz nV/Hz VDS = 12V, VGS = OV f = 10 Hz Equivalent Short Circuit Input Noise Voltage e N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Typ Typ 4 4 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com Databook.fxp 1/14/99 1:50 PM Page B-29 B-29 01/99 IF142 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IF142 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage Gate Source Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) VGS(OFF) VGS VGS(F) IDSS Process NJ14AL Max - 25 5 - 20 V 10 mA 375 mW 3 mW/C - 65C to 200C Unit Test Conditions V IG = - 1 A, VDS = OV - 0.1 nA VGS = - 15V, VDS = OV - 0.2 -6 -5 1 15 nA V V V mA VGS = - 15V, VDS = OV VDS = 15V, ID = 5 nA VDS = 15V, ID = 50 A VDS = O, IG = 1 mA VDS = 15V, VGS = OV TA = 150C mS VDS = 15V, VGS = OV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transmittance Yfs Common Source Output Conductance Yos 0.05 S VDS = 15V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 3 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 0.6 pF VDS = 15V, VGS = OV f = 1 MHz nV/Hz VDS = 12V, VGS = OV f = 10 Hz 3.5 Typ Equivalent Short Circuit Input Noise Voltage e N TO236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com 4 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 1:50 PM Page B-30 B-30 01/99 IF1320 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier At 25C free air temperature: Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF1320 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ132L Max - 20 - 0.35 5 - 20 V 10 mA 225 mW 1.8 mWC - 65C to 200C - 0.1 - 1.5 20 Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VDS = OV, VGS = - 10V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV mS VDS = 10V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 pF VDS = 10V, ID = 5 mA f = 1 MHz nV/Hz VDS = 10V, ID = 5 mA f = 1 kHz 15 Typ Equivalent Short Circuit Input Noise Voltage e N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 2.5 TO236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com Databook.fxp 1/14/99 1:50 PM Page B-31 B-31 01/99 IF1330 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IF1330 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ132H Max - 20 - 0.35 5 - 20 V 10 mA 225 mW 1.8 mW/C - 65C to 200C - 0.1 - 1.5 20 Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VDS = OV, VGS = - 10V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV mS VDS = 10V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 pF VDS = 10V, ID = 5 mA f = 1 MHz nV/Hz VDS = 10V, ID = 5 mA f = 1 kHz 10 Typ Equivalent Short Circuit Input Noise Voltage e N TO236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com 2.5 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 12:56 PM Page B-32 B-32 01/99 IF1331 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier At 25C free air temperature: Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF1331 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ132H Max Unit - 20 - 0.35 5 - 20 V 10 mA 225 mW 1.8 mW/C - 65C to 200C - 0.1 - 1.5 20 Test Conditions V IG = - 1 A, VDS = OV nA V mA VDS = OV, VGS = - 10V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV mS VDS = 10V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 20 pF VDS = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 pF VDS = 10V, ID = 5 mA f = 1 MHz nV/Hz VDS = 10V, ID = 5 mA f = 1 kHz 10 Typ Equivalent Short Circuit Input Noise Voltage e N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 2.5 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-33 B-33 01/99 IF1801 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IF1801 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Max - 20 - 0.35 30 - 0.1 -2 - 20 V 10 mA 300 mW 2 mW/C - 65C to 200C Process NJ1800DL Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 10V, VDS = OV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV mS VDS = 10V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 100 pF VDS = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 50 pF VDS = 10V, ID = 5 mA f = 1 MHz nV/Hz VDG = 4V, ID = 5 mA f = 1 kHz 50 Typ Equivalent Short Circuit Input Noise Voltage e N TO52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 0.5 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-34 B-34 01/99 IF3601 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier At 25C free air temperature: Absolute maximum ratings = TA at 25C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF3601 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Dynamic Electrical Characteristics Process NJ3600L Max Unit - 20 - 0.35 30 - 20 V 10 mA 300 mW 2 mW/C - 65C to 200C - 0.1 -2 Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 10V, VDS = OV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV Typ Common Source Forward Transconductance gfs 750 mS VDS = 10V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 300 pF VDS = OV, VGS = - 4V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 200 pF VDS = OV, VGS = - 4V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 0.3 nV/Hz VDG = 3V, ID = 5 mA f = 100 Hz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TO39 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-35 B-35 01/99 IF3602 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IF3602 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Dynamic Electrical Characteristics Max - 20 - 0.35 30 - 0.5 -3 - 20 V 10 mA 300 mW 4 mW/C - 65C to 200C Process NJ3600L Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 10V, VDS = OV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV Typ Common Source Forward Transconductance gfs 750 mS VDS = 10V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 300 pF VDS = OV, VGS = - 4V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 200 pF VDS = OV, VGS = - 4V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 0.3 nV/Hz VDG = 3V, ID = 5 mA f = 100 Hz mV VDS = 10V, VGS = OV Max Differential Gate Source Voltage | VGS1 - VGS2 | 100 TO78 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Omitted, 5 Source, 6 Drain, 7 Gate, 8 Omitted www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 1:51 PM Page B-36 B-36 01/99 IF4500 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier At 25C free air temperature: Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF4500 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ450L Max - 20 - 0.35 5 - 20 V 10 mA 225 mW 1.8 mW/C - 65C to 200C - 0.1 - 1.5 Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 30V, VDS = OV VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = OV mS VDS = 15V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 35 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 8 pF VDS = 15V, VGS = OV f = 1 MHz nV/Hz VDS = 12V, VGS = OV f = 1 kHz 15 Typ Equivalent Short Circuit Input Noise Voltage e N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 1.5 TO236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-37 B-37 01/99 IF4501 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IF4501 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ450L Max - 20 - 0.35 5 - 20 V 10 mA 300 mW 2.4 mW/C - 65C to 200C - 0.1 - 1.5 Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 10V, VDS = OV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV mS VDS = 15V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 35 pF VDS = 15V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 9 pF VDS = 15V, ID = 5 mA f = 1 MHz nV/Hz VDG = 12V, ID = 5 mA f = 1 kHz 15 Typ Equivalent Short Circuit Input Noise Voltage e N TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1.5 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 1:51 PM Page B-38 B-38 01/99 IF4510 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier At 25C free air temperature: Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF4510 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ450H Max - 20 - 0.35 5 - 20 V 10 mA 300 mW 1.8 mW/C - 65C to 200C - 0.1 - 1.5 Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 15V, VDS = OV VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = OV mS VDS = 15V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 35 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 8 pF VDS = 15V, VGS = OV f = 1 MHz nV/Hz VDG = 12V, VGS = OV f = 1 kHz 15 Typ Equivalent Short Circuit Input Noise Voltage e N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 1.5 TO236AB Package Pin Configuration Dimensions in Inches (mm) 1 Drain, 2 Source, 3 Gate www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-39 B-39 01/99 IF4511 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IF4511 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ450H Max - 20 - 0.35 5 - 20 V 10 mA 300 mW 1.8 mW/C - 65C to 200C - 0.1 - 1.5 Unit Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 30V, VDS = OV VDS = 15V, ID = 0.5 nA VDS = 15V, VGS = OV mS VDS = 15V, ID = 5 mA f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 35 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 8 pF VDS = 15V, VGS = OV f = 1 MHz nV/Hz VDG = 12V, VGS = OV f = 1 kHz 15 Typ Equivalent Short Circuit Input Noise Voltage e N TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com 1.5 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-40 B-40 01/99 IF9030 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier At 25C free air temperature: Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IF9030 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) IGSS VGS(OFF) IDSS Process NJ903L Max Unit - 20 - 0.35 30 - 20 V 10 mA 300 mW 2.4 mW/C - 65C to 200C - 0.1 -2 300 Test Conditions V IG = - 1 A, VDS = OV nA V mA VGS = - 10V, VDS = OV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV mS VDS = 10V, VGS = OV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Input Capacitance Ciss 60 pF VDS = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 20 pF VDS = 10V, ID = 5 mA f = 1 MHz nV/Hz VDG = 4V, ID = 5 mA f = 1 kHz 80 Typ Equivalent Short Circuit Input Noise Voltage e N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 0.5 TO52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com Databook.fxp 1/14/99 12:22 PM Page B-41 B-41 01/99 IFN421, IFN422, IFN423 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Very High Input Impedance Differential Amplifiers Electrometers Device Dissipation (Derate 3.2 mW/C to 50C) Total Device Dissipation (Derate 6 mW/C to 150C) Storage Temperature Range At 25C free air temperature: IFN421, IFN422, IFN423 Static Electrical Characteristics Min Typ - 60 Gate Source Breakdown Voltage V(BR)GSS - 40 Gate to Gate Breakdown Voltage BVG1G2 40 Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Gate Source Voltage VGS Drain Saturation Current (Pulsed) IDSS Max 400 mW 750 mW - 65C to 200C Process NJ01 Unit Test Conditions V IG = - 1 A, VDS = OV V IG = - 1 A, ID = OA, IS = OA -1 pA VGS = - 20V, VDS = OV -1 nA VGS = - 20V, VDS = OV - 0.25 pA VDS = 10V, ID = 30 A - 250 pA VDS = 10V, ID = 30 A -2 V VDS = 10V, ID = 1 nA - 1.8 V VDS = 10V, ID = 30 A 60 1000 A VDS = 10V, VGS = O V 100 1500 S VDS = 10V, VGS = O V f = 1 kHz - 0.4 TA = +125C TA = +125C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 3 S VDS = 10V, ID = 30 A f = 1 kHz Common Source Input Capacitance Ciss 3 pF VDS = 10V, VGS = O V f = 1 MHz 1.5 pF VDS = 10V, VGS = O V f = 1 MHz 70 nV/Hz VDS = 10V, ID = 30 A f = 10 Hz 1 dB VDS = 10V, ID = 30 A RG = 10 M f = 10 Hz mV VDG = 10V, ID = 30 A Common Source Reverse Transfer Capacitance Crss Equivalent Circuit Input Noise Voltage e N Noise Figure NF 20 Max - IFN421 IFN422 IFN423 Differential Gate Source Voltage |VGS1- VGS2| Differential Gate Source Voltage With Temperature |VGS1- VGS2| T 10 10 15 25 25 40 V/C VDG = 10V, ID = 30 A TA = - 55C TB = 25C TC = 125C Min - IFN421 IFN422 IFN423 Common Mode Rejection Ratio CMRR 90 80 TO78 Package Pin Configuration See Section G for Outline Dimensions 1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted www.interfet.com 80 dB VDG = 10V to 20V, ID = 30 A 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 12:22 PM Page B-42 B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Very High Impedance Differential Amplifiers Electrometers Device Dissapation (Derate 3.2 mW/C to 50C) Total Device Dissipation (Derate 6 mW/C to 150 C) Storage Temperature Range At 25C free air temperature: IFN424, IFN425, IFN426 Static Electrical Characteristics Min Typ - 60 Gate Source Breakdown Voltage V(BR)GSS - 40 Gate to Gate Breakdown Voltage BVG1G2 40 Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Gate Source Voltage VGS Drain Saturation Current (Pulsed) IDSS - 0.4 60 400 mW 750 mW - 60 C to 200 C Process NJ01 Max Unit Test Conditions V IG = - 1 A, VDS = OV V IG = - 1 A, ID = OA, IS = OA -3 pA VGS = - 20V, VDS = OV -3 nA VGS = - 20V, VDS = OV - 0.5 pA VDS = 10V, ID = 30 A - 500 pA VDS = 10V, ID = 30 A -3 V VDS = 10V, ID = 1 nA - 2.9 V VDS = 10V, ID = 30 A A VDS = 10V, VGS = O V 1500 S VDS = 10V, VGS = O V f = 1 kHz 1800 TA = +125C TA = +125C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 100 Common Source Output Conductance gos 3 S VDS = 10V, ID = 30 A f = 1 kHz Common Source Input Capacitance Ciss 3 pF VDS = 10V, VGS = O V f = 1 MHz 1.5 pF VDS = 10V, VGS = O V f = 1 MHz 70 nV/Hz VDS = 10V, ID = 30 A f = 10 Hz 1 dB VDS = 10V, ID = 30 A RG = 1 M f = 10 Hz mV VDG = 10V, ID = 30 A Common Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage e N Noise Figure NF 20 Max - IFN424 IFN425 IFN426 Differential Gate Source Voltage |VGS1- VGS2| Differential Gate Source Voltage With Temperature |VGS1- VGS2| T 10 10 15 25 25 40 V/C VDG = 10V, ID = 30 A TA = - 55C TB = 25C TC = 125C Min - IFN424 IFN425 IFN426 Common Mode Rejection Ratio CMRR 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 90 80 80 dB VDG = 10V to 20V, ID = 30 A TO78 Package Pin Configuration See Section G for Outline Dimensions 1 Source 1, 2 Drain 1, 3 Gate 1, 4 Case, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted www.interfet.com Databook.fxp 1/14/99 12:22 PM Page B-43 B-43 01/99 IFN860 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise Audio Amplifier Equivalent to Crystalonics CD860 Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IFN860 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Leakage Voltage IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Differential Gate Source Voltage |VGS1- VGS2| Typ Process NJ450L Max - 20 - 0.3 - 20 V 50 mA 400 mW 2.3 mW/C - 65C to 200C Unit Test Conditions V IG = - 1 A, VDS = OV 3 nA VGS = - 10V, VDS = OV -3 V VDS = 10V, ID = 100 A 10 25 mA VDS = 10V, VGS = O V mV VDS = 10V, ID = 100 A mS VDS = 10V, ID = - 10 mA f = 1 kHz Dynamic Electrical Characteristics Transconductance gm 25 40 Common Source Input Capacitance Ciss 30 35 pF VDS = 10V, ID = - 10 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 17 20 pF VDS = 10V, ID = - 10 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 2 nV/Hz VDG = 3V, ID = 10 mA f = 1 kHz TO71 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 5 Source, 6 Drain, 7 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 12:22 PM Page B-44 B-44 01/99 IFN5114, IFN5115, IFN5116 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range IFN5114 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) Drain Cutoff Current IDSS Max 30 IFN5115 Min 30 2 10 - 30 - 90 Min 10 3 -1 6 1 -1 - 15 - 60 Unit V IG = - 1mA, VDS = OV 2 nA VGS = 20V, VDS = OV 10 A VGS = 20V, VDS = OV 4 V VDS = - 15V, IG = - 1 nA -1 -5 Test Conditions V VDS = OV, IG = - 1 mA mA VDS = - 15V, VGS = 18V - 25 mA VDS = - 15V, VGS = 15V -2 -2 -2 nA VDS = - 15V, VGS = 12V - 10 - 10 - 10 A VDS = - 15V, VGS = 7V V VGS = OV, ID = - 15 mA - 1.3 Drain Source ON Voltage Process PJ99 Max 30 2 10 5 ID(OFF) Max IFN5116 - 50 V 50 mA 500 mW 4 mW/C - 65C to 200C VDS(ON) - 0.8 V VGS = OV, ID = - 7 mA - 0.6 V VGS = OV, ID = - 3 mA TA = 150C TA = 150C rDS(ON) 75 100 150 VGS = OV, ID = - 1 mA Drain Source ON Resistance rds(on) 75 100 150 VGS = OV, ID = OA f = 1 kHz Common Source Input Capacitance Ciss 25 25 27 pF VDS =- 15V, VGS = OV f = 1 MHz pF VDS = - 10V, VGS = 12V f = 1 MHz pF VDS = - 10V, VGS = 7 V f = 1 MHz pF VDS = - 10V, VGS = 5V f = 1 MHz VDD VGG RL RG ID(ON) Static Drain Source ON Resistance Dynamic Electrical Characteristics 7 Common Source Reverse Transfer Capacitance 7 Crss 7 Switching Characteristics IFN5114 IFN5115 IFN5116 Turn ON Delay Time td(on) 6 10 25 ns Rise Time tr 10 20 35 ns Turn OFF Delay Time td(off) 6 8 20 ns Fall Time tf 15 30 60 ns - 10 20 130 100 - 15 -6 12 910 220 -7 -6 8 2000 390 -3 TO18 Package Surface Mount See Section G for Outline Dimensions SMP5114, SMP5115, SMP5116 V V mA Pin Configuration 1 Source 1, 2 Gate & Case, 3 Drain 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-45 B-45 01/99 IFN5432, IFN5433, IFN5434 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Analog Low On Resistance Switches Choppers IFN5432 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Min V(BR)GSS - 25 IGSS Gate Source Cutoff Voltage VGS(OFF) -4 Drain Saturation Current (Pulsed) IDSS 150 ID(OFF) Drain Source ON Voltage VDS Static Drain Source ON Resistance rDS(ON) Min - 10 IFN5434 Min - 200 -3 -9 100 -1 Process NJ903 Max Unit V IG = - 1A, VDS = OV - 200 pA VGS = - 15V, VDS = OV - 200 nA VGS = - 15V, VDS = OV -4 V VDS = 5V, IG = 3 nA - 25 - 200 - 200 2 Max - 25 - 200 Gate Reverse Current Drain Cutoff Current Max IFN5433 - 25 V 100 mA 300 mW 2.4 mW/C 30 Test Conditions mA VDS = 15V, VGS = OV pA VDS = 5V, VGS = - 10V 200 nA VDS = 5V, VGS = - 10V 100 mV VGS = OV, ID = 10 mA 7 10 VDS = OV, ID = 10 mA 200 200 200 200 200 50 70 5 TA = 150C TA = 150C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 5 7 10 VGS = OV, ID = OA f = 1 kHz Common Source Input Capacitance Ciss 60 60 60 pF VDS = OV, VGS = - 10V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 20 20 20 pF VDS = OV, VGS = - 10V f = 1 MHz Turn ON Delay Time td(on) 4 4 4 ns Rise Time tr 1 1 1 ns Turn OFF Delay Time td(off) 6 6 6 ns Fall Time tf 30 30 30 ns VDD = 1.5 V, VGS(ON) = OV VGS(OFF) = - 12V, ID(ON) = 10 mA (IFN5432) RL = 145 (IFN5433) RL = 143 (IFN5433) RL = 140 Switching Characteristics TO52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-46 B-46 01/99 IFN5564, IFN5565, IFN5566 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C. Wide Band Differential Amplifier Commutators Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating IFN5564 At 25C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Leakage Voltage IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Voltage VGS(f) Saturation Current (Pulsed) IDSS Static Drain Source ON Resistance rDS(ON) Max - 40 IFN5565 Min Max - 40 - 100 -3 5 30 Min - 200 - 0.5 -3 5 30 1 Unit Test Conditions V IG = - 1A, VDS = OV - 100 pA VGS = - 20V, VDS = OV - 200 nA - 0.5 -3 V 1 V VDS = OV, IG = 2 mA 5 30 mA VDS = 15V, VGS = OV 100 ID = 1 mA, VGS = OV 1 100 Process NJ72 Max - 40 - 100 - 200 - 0.5 IFN5566 - 40 V 50 mA 650 mW 3.3 mW/C 100 TA = 150C VDS = 15V, ID = 1 nA Dynamic Electrical Characteristics 7000 12500 7000 12500 7000 12500 hmo VDG = 15V, ID = 2 mA f = 1 kHz Common Source Forward Transconductance gfs Common Source Output Transconductance gos 45 45 45 hmo VDS = 15V, ID = 2 mA f = 1 kHz Ciss Common Source Reverse Transfer Capacitance Crss 12 12 12 pF VDS = 15V, ID = 2 mA f = 1 MHz 3 3 3 pF VDS = 15V, ID = 2 mA f = 1 MHz Noise Figure NF 1 1 1 dB VDS = 15V, ID = 2 mA RG = 1 M f = 10 Hz Equivalent Short Circuit Input Noise Voltage e N 50 50 50 nV/Hz VDG = 15V, ID = 2 mA f = 10 Hz 1 - VDG = 15V, VGS = OV 7000 Common Source Input Capacitance 7000 7000 hmo f = 100 MHz Characteristics Saturation Drain Current Ratio (Pulsed) IDSS1 0.95 1 0.95 1 0.95 IDSS2 Differential Gate Source Voltage |VGS(1)- VGS(2)| Gate Source Voltage Differential Drift Transconductance Ratio (Pulsed) - 5 10 20 mV |VGS(f)- VGS(f)| 10 25 50 V/C VDS = 15V, TA = 25C TB = 125C T 10 25 50 V/C ID = 2 mA TA = 55C TB = 25C 1 - gfs(1) gfs(2) 0.95 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 1 0.9 1 0.9 VDS = 15V, ID = 2 mA VDS = 15V, ID = 2 mA - TO71 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Omitted, 5 Source, 6 Drain, 7 Gate, 8 Omitted www.interfet.com Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C VHF Amplifiers Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range At 25C free air temperature: IFN5911 Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Min V(BR)GSS Max IG Min Process NJ30L or NJ36D Max Unit V IG = - 1 A, VDS = OV - 100 - 100 pA VGS = - 15V, VDS = OV - 250 - 250 nA VGS = - 15V, VDS = OV - 100 - 100 pA VDG = 10V, ID = 5 mA - 100 - 100 nA VDG = 10V, ID = 5 mA - 25 IGSS IFN5912 - 25 50 mA 500 mW 4 mW/C - 65C to 200C Test Conditions Gate Source Cutoff Voltage VGS(OFF) -1 -5 -1 -5 V VDS = 10V, ID = 1 nA Gate Source Voltage VGS - 0.3 -4 - 0.3 -4 V VDS = 10V, ID = 5 mA Drain Saturation Current (Pulsed) IDSS 7 40 7 40 mA VDS = 10V, VGS = OV 3000 10000 3000 10000 S VDG = 10V, ID = 5 mA 3000 10000 3000 10000 TA = 150C TA = 125C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs f = 1 kHz S VDG = 10V, ID = 5 mA f = 100 MHz 100 100 S VDG = 10V, ID = 5 mA f = 1 kHz Common Source Output Conductance gos 150 150 S VDG = 10V, ID = 5 mA f = 100 MHz Common Source Input Capacitance Ciss 5 5 pF VDG = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 pF VDG = 10V, ID = 5 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 20 20 nV/Hz VDG = 10V, ID = 5 mA f = 10 kHz Noise Figure NF 1 1 dB VDG = 10V, ID = 5 mA RG = 100 K f = 10 Hz Differential Gate Current |IG1 | - |IG2 | 20 20 nA VDG = 10V, ID = 5 mA TA = 125C Saturation Drain Current Ratio IDSS1 / IDSS2 0.95 1 Differential Gate Source Voltage VGS1 - VGS2 VGS1 - VGS2 10 15 mV VDG = 10V, ID = 5 mA 20 40 V/C VDG = 10V, ID = 5 mA TA = 25C TB = 125C 20 40 V/C VDG = 10V, ID = 5 mA TA = - 55C TB = 25C VDG = 10V, ID = 5 mA f = 1 kHz Gate Source Voltage Differential Drift T VGS1 - VGS2 T Transconductance Ratio gfs1 / gfs2 0.95 1 0.95 0.95 TO78 Package Pin Configuration See Section G for Outline Dimensions 1 Source, 2 Drain, 3 Gate, 4 Case, 5 Source, 6 Drain, 7 Gate, 8 Omitted www.interfet.com 1 1 VDS = 10V, VGS = OV 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-48 B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: IFN6449 Static Electrical Characteristics Min Max IFN6450 Min Max IFN6449 IFN6450 - 100 V - 100 V - 300 V - 200 V 10 mA 10 mA 800 mW 800 mW 6.4 mW/C 6.4 mW/C Process NJ42 Unit Test Conditions Gate Drain Breakdown Voltage V(BR)GDO - 300 - 200 V IG = - 10 A, I S = OA Gate Source Breakdown Voltage V(BR)GSO - 100 - 100 V IG = - 10 A, ID = OA Gate Reverse Current IGSS - 100 nA VGS = - 80V, VDS = OV - 100 A VGS = - 80V, VDS = OV Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) TA = 150C -2 - 15 -2 - 15 V VDS = 30V, ID = 4 nA IDSS 2 10 2 10 mA VDS = 30V, VGS = OV Common Source Forward Transfer Transmittance | Yfs | 0.5 3 0.5 3 mS VDS = 30V, VGS = OV f = 1 kHz Common Source Output Conductance gos 100 100 S VDS = 30V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 10 10 pF VDS = 30V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 5 5 pF VDS = 30V, VGS = OV f = 1 MHz Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 TO39 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com Databook.fxp 1/14/99 1:02 PM Page B-49 B-49 01/99 J108, J109 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Commutators Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: J108 Static Electrical Characteristics Min J109 Max Gate Source Breakdown Voltage V(BR)GSS - 25 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) -3 Drain Saturation Current (Pulsed) IDSS 80 Drain Cutoff Current ID(OFF) 3 Drain Source ON Resistance rds(on) Drain Gate Capacitance Min Process NJ450 Max - 25 -3 - 10 -2 - 25 V 50 mA 360 mW 3.27 mW/C Unit Test Conditions V IG = - 1 A, VDS = OV -3 nA VGS = - 15V, VDS = OV -6 V VDS = 5V, ID = 1 A 40 mA VDS = 15V, VGS = OV 3 nA VDS = 5V, VGS = - 10V 8 12 VGS = O, VDS < = 0.1V f = 1 kHz Cgd 15 15 pF VDS = OV, VGS = - 10V f = 1 MHz Source Gate Capacitance Cgs 15 15 pF VDS = OV, VGS = - 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = OV f = 1 MHz Dynamic Electrical Characteristics Switching Characteristics Typ Typ Turn ON Delay Time td(on) 3 3 ns Rise Time tr 1 1 ns Turn OFF Delay Time td(off) 4 4 ns Fall Time tf 18 18 ns TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ108, SMPJ109 VDD VGS(OFF) RL J108 J109 1.5 - 12 150 1.5 -7 150 V V Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-50 B-50 01/99 J110, J110A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Commutators Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: J110 Static Electrical Characteristics Min J110A Max Gate Source Breakdown Voltage V(BR)GSS - 25 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) 3 Drain Source ON Resistance rds(on) Drain Gate Capacitance Min Max - 25 -3 - 0.5 -4 10 - 0.5 Process NJ450 Unit Test Conditions V IG = - 1 A, VDS = OV -3 nA VGS = - 15V, VDS = OV -4 V VDS = 5V, ID = 1 A 10 - 25 V 50 mA 360 mW 3.27 mW/C mA VDS = 15V, VGS = OV 3 nA VDS = 5V, VGS = - 10V 18 25 VGS = O, VDS < = 0.1V f = 1 kHz Cgd 15 15 pF VDS = OV, VGS = - 10V f = 1 MHz Source Gate Capacitance Cgs 15 15 pF VDS = OV, VGS = - 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 85 85 pF VDS = VGS = OV f = 1 MHz Dynamic Electrical Characteristics Switching Characteristics Typ Typ Turn ON Delay Time td(on) 4 4 ns Rise Time tr 1 1 ns Turn OFF Delay Time td(off) 6 6 ns Fall Time tf 30 30 ns VDD VGS(OFF) RL J110 J110A 1.5 -5 150 1.5 -5 150 TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ110, SMPJ110A V V Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-51 B-51 01/99 J111, J112, J113 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Commutators Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J111 At 25C free air temperature Static Electrical Characteristics Min J112 Max - 35 Min J113 Max Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS - 35 Gate Source Cutoff Voltage VGS(OFF) -3 Drain Saturation Current (Pulsed) IDSS 20 Drain Cutoff Current ID(OFF) -1 -1 rds(on) 30 Drain Gate Capacitance Cdg Source Gate Capacitance Cgs Drain Gate + Source Gate Capacitance Cgd + Cgs Process NJ132 Max Unit V IG = - 1A, VDS = OV -1 nA VGS = - 15V, VDS = OV V VDS = 5V, ID = 1 A - 35 -1 - 10 Min -1 -1 -5 5 - 35 V 50 mA 360 mW 3.27 mW/C -3 2 Test Conditions mA VDS = 15V, VGS = OV -1 nA VDS = 15V, VGS = - 10V 50 100 VGS = OV, VDS = 0.1V f = 1 kHz 5 5 5 pF VDS = OV, VGS = - 10V f = 1 MHz 5 5 5 pF VDS = OV, VGS = - 10V f = 1 MHz 28 28 28 pF VDS = VGS = OV f = 1 MHz ns J111 Dynamic Electrical Characteristics Drain Source ON Resistance Switching Characteristics Typ Typ Typ 7 7 7 Turn ON Delay Time td(on) Rise Time tr 6 6 2 ns VDD 10 10 10 V Turn OFF Delay Time td(off) 20 20 20 ns VGS(OFF) - 12 -7 -5 V Fall Time tf 15 15 15 ns RL 800 1600 3200 TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ111, SMPJ112, SMPJ113 J112 J113 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-52 B-52 01/99 J174, J175 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Commutators Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: J174 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Dynamic Electrical Characteristics J175 Max 30 Min - 30 V 50 mA 360 mW 3.27 mW/C Process PJ99 Max 30 Unit Test Conditions V IG = 1 A, VDS = OV 1 nA VGS = 20V, VDS = OV 6 V VDS = - 15V, ID = - 10 nA - 20 - 125 - 7 - 70 mA VDS = - 15V, VGS = OV -1 -1 nA VDS = - 15V, VGS = 10V VGS = O, VDS < = 0.1V f = 1 kHz 1 5 10 3 Max Max 85 85 Typ Typ Drain Gate Capacitance Cgd 5.5 5.5 pF VDS = OV, VGS = 10V f = 1 MHz Source Gate Capacitance Cgs 5.5 5.5 pF VDS = OV, VGS = 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 32 32 pF VDS = VGS = OV f = 1 MHz td(on) 2 5 ns Rise Time tr 5 10 ns Turn OFF Delay Time td(off) 5 10 ns Fall Time tf 10 20 ns Switching Characteristics Turn ON Delay Time VDD VGS(OFF) RL VGS(ON) J174 J175 - 10 12 560 O -6 8 1.2 k O TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ174, SMPJ175 V V V Pin Configuration 1 Drain, 2 Gate, 3 Source 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-53 B-53 01/99 J176, J177 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Commutators Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: J176 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Max 30 Min Process PJ99 Max 30 1 4 -2 0.8 1 nA VGS = 20V, VDS = OV 2.25 V VDS = - 15V, ID = - 10 nA - 35 - 1.5 - 20 mA VDS = - 15V, VGS = OV -1 nA VDS = - 15V, VGS = 10V VGS = O, VDS < = 0.1V f = 1 kHz -1 Max 250 300 Typ Typ Dynamic Electrical Characteristics Test Conditions IG = 1 A, VDS = OV Max rds(on) Unit V 1 Dynamic Electrical Characteristics Drain Source ON Resistance J177 - 30 V 50 mA 360 mW 3.27 mW/C Drain Gate Capacitance Cgd 5.5 5.5 pF VDS = OV, VGS = 10V f = 1 MHz Source Gate Capacitance Cgs 5.5 5.5 pF VDS = OV, VGS = 10V f = 1 MHz Drain Gate + Source Gate Capacitance Cgd + Cgs 32 32 pF VDS = VGS = OV f = 1 MHz td(on) 15 20 ns Rise Time tr 20 25 ns Turn OFF Delay Time td(off) 15 20 ns Fall Time tf 20 25 ns Switching Characteristics Turn ON Delay Time TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ176, SMPJ177 VDD VGS(OFF) RL VGS(ON) J176 J177 -6 6 5.6 k O -6 3 10 k O V V V Pin Configuration 1 Drain, 2 Gate, 3 Source www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-54 B-54 01/99 J201, J202 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J201 At 25C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J202 Max - 40 Min Typ Process NJ16 Max Unit V IG = - 1A, VDS = OV - 100 pA VGS = - 20V, VDS = OV - 40 - 100 - 10 - 40 V 50 mA 360 mW 3.27 mW/C - 10 Test Conditions pA VDG = 20V, ID = IDSS(min) - 0.3 - 1.5 - 0.8 -4 V VDS = 20V, ID = 10 nA IDSS 0.2 1 0.9 4.5 mA VDSS = 15V, VGS = OV Common Source Forward Transconductance g fs 500 S VDS = 20V, VGS = OV f = 1 kHz Common Source Output Conductance g os 1 3.5 S VDS = 20V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 20V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 20V, VGS = OV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 5 5 nV/Hz VDS = 10V, VGS = OV f = 1 kHz Dynamic Electrical Characteristics 1000 TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ201, SMPJ202 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-55 B-55 01/99 J203, J204 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J203 At 25C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J204 Max - 40 Min Typ Process NJ16 Max Unit V IG = - 1A, VDS = OV - 100 pA VGS = - 20V, VDS = OV - 25 - 100 - 10 - 40 V 50 mA 360 mW 3.27 mW/C - 10 Test Conditions pA VDG = 20V, ID = IDSS(min) -2 V VDS = 20V, ID = 10 nA 3 mA VDS = 15V, VGS = OV 1500 S VDS = 20V, VGS = O V f = 1 kHz 10 2.5 S VDS = 20V, VGS = OV f = 1 kHz Ciss 4 4 pF VDS = 20V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 20V, VGS = OV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 5 10 nV/Hz VDS = 10V, VGS = OV f = 1 kHz -2 - 10 - 0.3 IDSS 4 20 0.2 1.2 Common Source Forward Transconductance g fs 1500 500 Common Source Output Conductance g os Common Source Input Capacitance Dynamic Electrical Characteristics TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ203, SMPJ204 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-56 B-56 01/99 J210, J211 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J210 At 25C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J211 Max - 25 Min Typ Process NJ26L Max Unit V IG = - 1A, VDS = OV - 100 pA VGS = - 15V, VDS = OV - 25 - 100 - 10 - 25 V 10 mA 360 mW 3.27 mW/C - 10 Test Conditions pA VDS = 20V, ID = 1 mA -1 -3 - 2.5 - 4.5 V VDS = 15V, ID = 1 nA IDSS 2 15 7 20 mA VDS = 15V, VGS = OV Common Source Forward Transconductance g fs 4000 12000 S VDS = 15V, VGS = O V f = 1 kHz Common Source Output Conductance g os 200 S VDS = 15V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 15V, VGS = OV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 10 10 nV/Hz VDS = 15V, VGS = OV f = 1 kHz Dynamic Electrical Characteristics 12000 6000 150 TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ210, SMPJ211 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-57 B-57 01/99 J212 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifier General Purpose Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: J212 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) -4 Drain Saturation Current (Pulsed) IDSS Typ - 25 V 10 mA 360 mW 3.27 mW/C Process NJ26L Max - 25 Unit Test Conditions V IG = - 1 A, VDS = OV pA VGS = - 15V, VDS = OV pA VDS = 20V, ID = 1 mA -6 V VDS = 15V, ID = 1 nA 15 40 mA VDS = 15V, VGS = O V 7000 12000 S VDS = 15V, VGS = O V f = 1 kHz 200 S VDS = 15V, VGS = O V f = 1 kHz - 100 - 10 Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos Common Source Input Capacitance Ciss 4 pF VDS = 15V, VGS = O V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 pF VDS = 15V, VGS = O V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 10 nV/Hz VDS = 15V, VGS = O V f = 1 kHz TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ212 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-58 B-58 01/99 J230, J231 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J230 At 25C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) Typ J231 Max - 40 Min Typ Process NJ16 Max Unit V IG = - 1A, VDS = OV - 250 pA VGS = - 30V, VDS = OV - 40 - 250 -2 - 40 V 50 mA 360 mW 3.27 mW/C -2 Test Conditions pA VDS = 20V, ID = OV - 0.5 -3 - 1.5 -5 V VDS = 20V, ID = 1 A IDSS 0.7 3 2 6 mA VDS = 20V, VGS = OV Common Source Forward Transconductance g fs 1000 3500 1500 4000 S VDS = 20V, VGS = OV f = 1 kHz Common Source Output Conductance g os 1.5 3 S VDS = 20V, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 4 4 pF VDS = 20V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 1 pF VDS = 20V, VGS = OV f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N nV/Hz VDS = 10V, VGS = OV f = 10 Hz nV/Hz VDS = 10V, VGS = OV f = 1 kHz Dynamic Electrical Characteristics 8 2 30 8 30 2 TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ230, SMPJ231 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-59 B-59 01/99 J232 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Audio Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: J232 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Operating Current IG Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Typ - 40 V 50 mA 360 mW 3.27 mW/C Process NJ16 Max - 40 - 250 -2 Unit Test Conditions V IG = - 1 A, VDS = OV pA VGS = - 30V, VDS = OV pA VDS = 20V, ID = OV -3 -6 V VDS = 20V, ID = 1 A 5 10 mA VDS = 20V, VGS = O V 2500 5000 S VDS = 20V, VGS = O V f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance gfs Common Source Output Conductance gos 5 S VDS = 20V, VGS = O V f = 1 kHz Common Source Input Capacitance Ciss 4 pF VDS = 20V, VGS = O V f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1 pF VDS = 20V, VGS = O V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N nV/Hz VDS = 10V, VGS = O V f = 10 Hz nV/Hz VDS = 10V, VGS = O V f = 1 kHz TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ232 20 6 30 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-60 B-60 01/99 J304, J305 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Mixers Oscillators VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J304 At 25C free air temperature: Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Typ J305 Max - 30 Min Typ Process NJ26 Max Unit V IG = - 1A, VDS = OV - 100 pA VGS = - 20V, VDS = OV - 30 - 100 - 30 V 10 mA 360 mW 3.27 mW/C Test Conditions -2 -6 - 0.5 -3 V VDS = 15V, ID = 1 nA 5 15 1 8 mA VDS = 15V, VGS = OV 4500 7500 3000 S VDS = 15V, VGS = OV f = 1 kHz S VDS = 15V, VGS = OV f = 100 MHz S VDS = 15V, VGS = OV f = 400 MHz S VDS = 15V, VGS = OV f = 1 kHz Dynamic Electrical Characteristics Common Source Forward Transconductance g fs Common Source Output Conductance g os Common Source Input Capacitance Ciss 3 3 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 0.85 0.85 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Output Capacitance Coss 1 1 pF VDS = 15V, VGS = OV f = 1 MHz Common Source Output Conductance gos 60 60 Common Source Output Susceptance bos 3600 Common Source Input Conductance gis 800 Common Source Input Susceptance bis Common Source Power Gain Gps Noise Figure NF 3000 4200 50 50 80 800 80 2000 800 80 2000 S VDS = 15V, VGS = OV f = 100 MHz S VDS = 15V, VGS = OV f = 400 MHz S VDS = 15V, VGS = OV f = 100 MHz S VDS = 15V, VGS = OV f = 400 MHz S VDS = 15V, VGS = OV f = 100 MHz S VDS = 15V, VGS = OV f = 400 MHz S VDS = 15V, VGS = OV f = 100 MHz 7500 S VDS = 15V, VGS = OV f = 400 MHz 20 dB VDS = 15V, ID = 5 mA f = 100 MHz 11 dB VDS = 15V, ID = 5 mA f = 400 MHz 1.7 dB dB VDS = 15V, ID = 5 mA RG = 1 f = 100 MHz 3.8 TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ304, SMPJ305 f = 400 MHz Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-61 B-61 01/99 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Mixers Oscillators VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating J308 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ J309 Max - 25 Min Typ Process NJ72 Max Unit V IG = - 1A, VDS = OV -1 nA VGS = - 15V, VDS = OV - 25 -1 -1 -1 - 6.5 12 60 - 25 V 10 mA 360 mW 3.27 mW/C Test Conditions -1 A VGS = - 15V, VDS = OV -1 -4 V VDS = 10V, ID = 1 nA 1 V VDS = OV, IG = 1 mA 12 30 mA VDS = 10V, VGS = OV S VDS = 10V, ID = 10 mA f = 1 kHz 250 S VDS = 10V, ID = 10 mA f = 1 kHz 1 TA = +125C Dynamic Electrical Characteristics Common Source Forward Transconductance g fs Common Source Output Conductance g os Common Gate Forward Transconductance g fg 13000 13000 S VDS = 10V, ID = 10 mA f = 1 kHz Common Gate Output Transconductance g og 150 100 S VDS = 10V, ID = 10 mA f = 1 kHz Gate Drain Capacitance Cdg 1.8 2.5 1.8 2.5 pF VDS = OV, VGS = - 10V f = 1 MHz Gate Source Capacitance Cgs 4 5 4 5 pF VDS = OV, VGS = - 10V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 10 10 nV/Hz VDS = 10V, ID = 10 mA f = 100 kHz Common Source Forward Transconductance Re(Yfs) 12 12 S VDS = 10V, ID = 10 mA f = 105 MHz Common Gate Input Conductance Re(Yig) 14 14 S VDS = 10V, ID = 10 mA f = 105 MHz Common Source Input Conductance Re(Yis) 0.4 0.4 S VDS = 10V, ID = 10 mA f = 105 MHz Common Source Output Conductance Re(Gos) 0.15 0.15 S VDS = 10V, ID = 10 mA f = 105 MHz 16 16 dB VDS = 10V, ID = 10 mA f = 105 MHz Common Gate Power Gain at Noise Match Noise Figure Gpg NF 8000 17000 10000 17000 250 11 11 dB VDS = 10V, ID = 10 mA f = 450 MHz 1.5 1.5 dB VDS = 15V, ID = 10 mA f = 105 MHz 2.7 2.7 dB VDS = 15V, ID = 10 mA f = 450 MHz TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ308, SMPJ309 Pin Configuration 1 Drain, 2 Source, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-62 B-62 01/99 J310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Mixer Oscillator VHF/UHF Amplifier Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation At 25C free air temperature: J310 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ Process NJ72 Max - 25 -2 24 - 25 V - 25 V 10 mA 360 mW Unit Test Conditions V IG = - 1 A, VDS = OV -1 nA VGS = - 15V, VDS = OV -1 A VGS = - 15V, VDS = OV - 6.5 V VDS = 10V, ID = 1 nA 1 V VDS = OV, IG = 1 mA 60 mA VDS = 10V, VGS = OV S VDS = 10V, ID = 10 mA f = 1 kHz S VDS = 10V, ID = 10 mA f = 1 kHz TA = + 125C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 8000 17000 Common Source Output Conductance gos 250 Common Gate Forward Transconductance gfg 1200 S VDS = 10V, ID = 10 mA f = 1 kHz Common Gate Output Transconductance gog 150 S VDS = 10V, ID = 10 mA f = 1 kHz Gate Drain Capacitance Cdg 1.8 2.5 pF VDS = O V, VGS = - 10V f = 1 MHz Gate Source Capacitance Cgs 4 5 pF VDS = O V, VGS = - 10V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 10 nV/Hz VDS = 10V, ID = 10 mA f = 100 Hz Common Source Forward Transconductance Re (Yfs) 12 S VDS = 10V, ID = 10 mA f = 105 MHz Common Gate Input Conductance Re (Yig) 14 S VDS = 10V, ID = 10 mA f = 105 MHz Common Source Input Conductance Re (Yis) 0.4 S VDS = 10V, ID = 10 mA f = 105 MHz Common Source Output Conductance Re (gos) 0.15 S VDS = 10V, ID = 10 mA f = 105 MHz Common Gate Power Gain at Noise Match Gpg 16 dB VDS = 10V, ID = 10 mA f = 105 MHz 11 dB VDS = 10V, ID = 10 mA f = 450 MHz Noise Figure NF 1.5 dB VDS = 15V, ID = 10 mA f = 105 MHz 2.7 dB VDS = 15V, ID = 10 mA f = 450 MHz TO226AA Package Surface Mount Dimensions in Inches (mm) SMPJ310 Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-63 B-63 01/99 P1086, P1087 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: P1086 Static Electrical Characteristics Min Max Gate Source Breakdown Voltage V(BR)GSS 30 Gate Reverse Current IGSS 2 Gate Source Cutoff Voltage VGS(OFF) 10 Saturation Drain Current (Pulsed) IDSS Drain Cutoff Current ID(OFF) Drain Reverse Current IDGO Drain Source ON Voltage VDS(ON) Static Drain Source ON Resistance P1087 Min Max 30 - 10 Process PJ99 Unit Test Conditions V IG = 1 A, VDS = OV 2 nA VGS = 15V, VDS = OV 5 V VDS = - 15V, ID = - 1 A mA VDS = - 20V, VGS = OV - 5.0 30 V 50 mA 360 mW 3.27 mW/C - 10 - 10 nA VDS = - 15V, VGS = 12V (P1086) - 0.5 - 0.5 A VGS = 7V (P1087) 2 2 nA VDG = - 15V, I S = OA 0.1 0.1 A VDG = - 15V, I S = OA - 0.5 - 0.5 V VGS = OV, ID = - 6 mA (P1086) - 0.5 - 0.5 V VGS = OV, ID = - 3 mA (P1087) rDS(ON) 75 150 I D = - 1 mA, VGS = OV Drain Source ON Resistance rds(on) 75 150 I D = O, VGS = OV f = 1 kHz Common Source Input Capacitance Ciss 45 45 pF VDS = - 15V, VGS = OV f = 1 kHz Common Source Reverse Transfer Capacitance 10 10 pF Crss 10 10 pF VDS = OV, VGS = 12V (P1086) VDS = OV, VGS = 7V (P1087) f = 1 MHz VDD = - 6V, VGS(ON) = OV TA = 85C TA = 85C Dynamic Electrical Characteristics Switching Characteristics Turn ON Delay Time td(on) 15 15 ns Rise Time tr 20 75 ns Turn OFF Delay Time td(off) 15 25 ns VD(ON) Fall Time tf 50 100 ns RL TO226AA Package Surface Mount Dimensions in Inches (mm) SMPP1086, SMPP1087 P1086 VGS(OFF) 12 P1087 7 V -6 -3 MA 910 1.8K Pin Configuration 1 Source, 2 Drain, 3 Gate www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor Wideband Differential Amplifiers At 25C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current V(BR)GSS Max Max Unit V IG = - 1 A, VDS = OV - 100 - 100 pA VGS = - 15V, VDS = OV - 250 - 250 nA VGS = - 15V, VDS = OV - 100 - 100 pA VDG = 10V, ID = 5 mA - 100 - 100 nA VDG = 10V, ID = 5 mA - 25 IGSS IG Process NJ30L - 25 Test Conditions Gate Source Cutoff Voltage VGS(OFF) - 1.0 -5 - 1.0 -5 V VDS = 15V, ID = 5 nA Gate Source Voltage VGS - 0.3 -4 - 0.3 -4 V VDS = 15V, ID = 5 mA Drain Saturation Current (Pulsed) IDSS 7 40 7 40 mA VDS = 10V, VGS = OV 3000 10000 3000 10000 S VDG = 10V, ID = 5 mA 3000 10000 3000 10000 TA = 150C TA = 125C Dynamic Electrical Characteristics Common Source Forward Transconductance gfs f = 1 kHz S VDG = 10V, ID = 5 mA f = 100 MHz 100 100 S VDG = 10V, ID = 5 mA f = 1 kHz Common Source Output Conductance gos 150 150 S VDG = 10V, ID = 5 mA f = 100 MHz Common Source Input Capacitance Ciss 5 5 pF VDG = 10V, ID = 5 mA f = 1 MHz Common Source Reverse Transfer Capacitance Crss 1.2 1.2 pF VDG = 10V, ID = 5 mA f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 20 20 nV/Hz VDG = 10V, ID = 5 mA f = 10 kHz Noise Figure NF 1 1 dB VDG = 10V, ID = 5 mA RG = 100 K f = 10 kHz Gate Source Differential Voltage VGS1 - VGS2 10 15 mV VDG = 10V, ID = 5 mA Gate Differential Current IG1 - IG2 20 20 nA VDG = 10V, ID = 5 mA TA = 125C Drain Saturation Current Ratio IDSS1 / IDSS2 0.95 1 0.95 1 VDG = 10V, VGS = OV Transconductance Ratio gfs1 / gfs2 1 0.95 1 VDG = 10V, ID = 5 mA f = 1 kHz Gate Source Differential Voltage With Temperature VGS1 - VGS2 T 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 0.95 20 40 V/C VDG = 10V, ID = 5 mA TA = 25C 20 40 V/C VDG = 10V, ID = 5 mA TB = 125C 20 40 V/C VDG = 10V, ID = 5 mA TA = 35C 20 40 V/C VDG = 10V, ID = 5 mA TB = 25C SOIC-8 Package Pin Configuration See Section G for Outline Dimensions 1 Source 1, 2 Drain 1, 3 Gate 1, 4 N/C, 5 Source 2, 6 Drain 2, 7 Gate 2, 8 Omitted www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-65 B-65 01/99 U290, U291 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C Choppers Low On Resistance Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: U290 Static Electrical Characteristics Min U291 Max Gate Source Breakdown Voltage V(BR)GSS - 30 Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) -4 Drain Saturation Current (Pulsed) IDSS 500 Drain Cutoff Current ID(OFF) Drain Source ON Voltage VDS(ON) Static Drain Source ON Resistance rDS(ON) 1 3 Drain Source ON Resistance rds(on) 1 3 Drain Gate OFF Capacitance Cdgo Source Gate OFF Capacitance Source Gate Plus Drain Gate Min Process NJ1800D Max - 30 Unit Test Conditions V IG = - 1 A, VDS = OV -1 -1 nA VGS = - 15V, VDS = OA -1 -1 A VGS = - 15V, VDS = OA - 4.5 V VDS = 15V, ID = 3 nA mA VDS = 10V, VGS = OV - 10 - 1.5 - 30 V 100 mA 500 mW 4 mW/C 200 TA = 150C 1 1 nA VDS = 5V, VGS = - 10V 1 1 A VDS = 5V, VGS = - 10V 30 70 mV VGS = OV, ID = 10 mA 2 7 VGS = OV, ID = 10 mA 2 7 VGS = OV, ID = O f = 1 kHz 30 30 pF VDG = 15V, IS = OV f = 1 MHz Csgo 30 30 pF VDG = 15V, IS = OV f = 1 MHz Ciss 160 160 pF VDG = OV, VGS = OV f = 1 MHz Turn ON Delay Time td(on) 15 15 ns Rise Time tr 20 20 ns VDD = 1.5V, ID(ON) = 30 mA RL = 50 VGS(ON) = OV Turn OFF Delay Time td(off) 15 15 ns (U290) VGS(OFF) = - 12 V Fall Time tf 20 20 ns (U291) VGS(OFF) = - 7V TA = 150C Dynamic Electrical Characteristics Switching Characteristics TO52 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-66 B-66 01/99 U308, U309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C. Mixers Oscillators VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating U308 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ U309 Max - 25 Min Typ Process NJ72 Max Unit V VGS = - 1A, VDS = OV - 150 pA VGS = - 15V, VDS = OV - 25 - 150 - 150 -1 -6 12 60 - 25 V 20 mA 500 mW 4 mw/C Test Conditions - 150 nA VGS = - 15V, VDS = OV -1 -4 V VDS = 10V, ID = 1 nA 1 V VDS = OV, IG = 10 mA 12 30 mA VDS = 10V, VGS = OV 1 TA = +125C Dynamic Electrical Characteristics 10 Common Gate Forward Transconductance Gfs 17 10 15 14 17 mS VDS = 10V, ID = 10 mA f = 1 kHz 15 mS VDS = 10V, ID = 10 mA f = 105 MHz 14 250 Common Gate Output Conductance Gog 250 mS VDS = 10V, ID = 10 mA f = 450 MHz S VDS = 10V, ID = 10 mA f = 1 kHz 0.18 0.18 S VDS = 10V, ID = 10 mA f = 105 MHz 0.32 0.32 S VDS = 10V, ID = 10 mA f = 450 MHz Drain Gate Capacitance Cdg 2.5 Gate Source Capacitance Cgs 5 Equivalent Short Circuit Input Noise Voltage e N Common Gate Power Gain Gpg Noise Figure NF 2.5 10 pF VDS = 10V, VGS = - 10V f = 1 MHz 5 pF VDS = 10V, VGS = - 10V f = 1 MHz 10 nV/Hz VDS = 10V, ID = 10 mA f = 100 kHz 14 16 14 16 dB VDS = 10V, ID = 10 mA f = 105 MHz 10 11 10 11 dB VDS = 10V, ID = 10 mA f = 450 MHz 1.5 2 1.5 2 dB VDS = 10V, ID = 10 mA f = 105 MHz 2.7 3.5 2.7 3.5 dB VDS = 10V, ID = 10 mA f = 450 MHz TO52 Package Surface Mount Dimensions in Inches (mm) SMPJ308/J309 Pin Configuration 1 Source, 2 Drain, 3 Gate & Case 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:33 AM Page B-67 B-67 01/99 U310 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C. Mixer Oscillator VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: U310 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ - 25 V 20 mA 500 mW 4 mW/C Process NJ72L Max - 25 Unit Test Conditions V IG = - 1 A, VDS = OV - 150 pA VGS = - 15V, VDS = OV - 150 nA VGS = - 15V, VDS = OV -6 V VDS = 10V, ID = 1 nA 1 V VDS = OV, IG = 10 mA 60 mA VDS = 10V, VGS = OV 17 mS VDS = 10V, ID = 10 mA f = 1 kHz 15 mS VDS = 10V, ID = 10 mA f = 105 MHz 14 mS VDS = 10V, ID = 10 mA f = 450 MHz S VDS = 10V, ID = 10 mA f = 1 kHz 0.18 S VDS = 10V, ID = 10 mA f = 105 MHz 0.32 S VDS = 10V, ID = 10 mA f = 450 MHz - 2.5 24 TA = 125C Dynamic Electrical Characteristics 10 Common Gate Forward Transconductance gfg 250 Common Gate Output Conductance gog Drain Gate Capacitance Cdg 2.5 pF VDS = 10V, VGS = - 10V f = 1 MHz Gate Source Capacitance Cgs 5 pF VDS = 10V, VGS = - 10V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N Common Gate Power Gain Gpg Noise Figure NF 10 nV/Hz VDS = 10V, ID = 10 mA f = 100 Hz 14 16 dB VDS = 10V, ID = 10 mA f = 105 MHz 10 11 dB VDS = 10V, ID = 10 mA f = 450 MHz TO52 Package Surface Mount See Section G for Outline Dimensions SMPJ310 1.5 2 dB VDS = 10V, ID = 10 mA f = 105 MHz 2.7 3.5 dB VDS = 10V, ID = 10 mA f = 450 MHz Pin Configuration 1 Source, 2 Drain, 3 Gate & Case www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-68 B-68 01/99 U311 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C. Mixer Oscillator VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: U311 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS 20 Common Gate Forward Transconductance gfg 1000 Common Gate Output Conductance gog Gate Drain Capacitance Gate Source Capacitance Typ - 25 V 10 mA 300 mW 2.4 mW/C Process NJ72L Max - 25 Unit Test Conditions V IG = - 1 A, VDS = OV - 150 pA VGS = - 15V, VDS = OV - 150 nA VGS = - 15V, VDS = OV -6 V VDS = 10V, ID = 1 nA 1 V VDS = OV, IG = 1 mA 60 mA VDS = 10V, VGS = OV S VDS = 10V, ID = 10 mA f = 1 kHz 250 S VDS = 10V, ID = 10 mA f = 1 kHz Cdg 2.5 pF VDS = 10V, ID = 10 mA f = 1 MHz Cgs 5 pF VDS = 10V, ID = 10 mA f = 1 MHz -1 TA = 150C Dynamic Electrical Characteristics 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 17000 TO72 Package Pin Configuration Dimensions in Inches (mm) 1 Source, 2 Drain, 3 Gate, 4 Case www.interfet.com Databook.fxp 1/13/99 2:09 PM Page B-69 B-69 01/99 U350 Hybrid Quad Silicon Junction Field-Effect Transistor Array Analog Multiplier VHF Double-Balanced Mixer Absolute maximum ratings at TA = 25C. Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: U350 Static Electrical Characteristics Min Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ Four Matched Process NJ72L Max - 25 -2 24 - 25 V 25 mA 400 mW 3.2 mW/C Unit Test Conditions V IG = - 1 A, VDS = OV -1 nA VGS = - 15V, VDS = OV -1 A VGS = - 15V, VDS = OV -6 V VDS = 10V, ID = 1 nA 1 V VDS = OV, IG = 1 mA 60 mA VDS = 15V, VGS = OV 90 VGS = OV, ID = mA f = 1 kHz 18 mS VDS = 10V, ID = 10 mA f = 1 kHz TA = 125C Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) 50 Common Source Forward Transconductance gfs Common Source Output Conductance gos 150 S VDS = 10V, ID = 10 mA f = 1 kHz Drain Gate Capacitance Cdgo 2.5 pF VGD = - 10V, IS = OV f = 1 MHz Gate Source Capacitance Csgo 5 pF VGS = - 10V, ID = OV f = 1 MHz (Conversion Gain) Gc 4 dB VDS = 20V, VGS = 1/2 VGS(OFF) RD = 1,700 f = 100 MHz Noise Figure NF 7 dB VDS = 20V, VGS = 1/2 VGS(OFF) RD = 1,700 f = 100 MHz Saturation Drain Current Ratio IDSS / IDSS 0.9 1 VDS = 15V, VDS = OV Gate Source Cutoff Voltage Ratio VGS(OFF) / VGS(OFF) 0.9 1 VDS = 15V, ID = 1 nA Common Source Forward Transconductance gfs / gfs 0.9 1 VDS = 15V, ID = 10 mA f = 1 kHz Differential Output Conductance Yos / Yos 0.9 1 VDS = 15V, ID = 10 mA f = 1 kHz 10 TO78 Package Pin Configuration Dimensions in Inches (mm) 1 Gate 1 & 3, 2 Drain 1 & 4, 3 Source 1 & 2, 4 Ground & Case, 5 Source 3 & 4, 6 Drain 2 & 3, 7 Gate 2 & 4, 8 Omitted www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 Databook.fxp 1/13/99 2:09 PM Page B-70 B-70 01/99 U430, U431 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25C. Balanced Mixers Differential Amplifiers U430 At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Total Device Dissipation (Derate 4 mW/C to150C) Storage Temperature Range Lead Temperature Min V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Gate Source Forward Voltage VGS(F) Drain Saturation Current (Pulsed) IDSS Typ U431 Max - 25 Min Typ Process NJ72 Max Unit V IG = - 1A, VDS = OV - 150 pA VGS = - 15V, VDS = OV - 25 - 150 - 150 -1 -4 12 30 500 mW - 65C to +150C 300C Test Conditions - 150 nA VGS = - 15V, VDS = OV -2 -6 V VDS = 10V, ID = 1 nA 1 V VDS = OV, IG = 10 mA 24 60 mA VDS = 10V, VGS = OV 1 TA = 150C Dynamic Electrical Characteristics Common Source Forward Transconductance Gfs Common Source Output Conductance Gos 10 17 10 12 17 mS VDS = 10V, ID = 10 mA f = 1 kHz 12 mS VDS = 10V, ID = 10 mA f = 100 MHz S VDS = 10V, ID = 10 mA f = 1 kHz S VDS = 10V, ID = 10 mA f = 100 MHz 250 250 0.15 0.15 Drain Gate Capacitance Cdg 5 5 pF VDS = OV, VGS = - 10V f = 1 MHz Source Gate Capacitance Cgs 2.5 2.5 pF VDS = OV, VGS = - 10V f = 1 MHz Equivalent Short Circuit Input Noise Voltage e N 10 10 nV/Hz VDS = 10V, ID = 10 mA f = 100 kHz Power Match Source Admittance gig 12 12 VDS = 10V, ID = 10 mA f = 100 MHz 3 VDS = 20V, RL = 2 k VGS = 1/2 VGS(OFF) f = 100 MHz Conversion Gain Gc Saturation Drain Current Ratio IDSS1 /IDSS2 0.9 1 0.9 1 VDS = 10V, VG = OV Gate Source Cutoff Voltage Ratio VGS(OFF)1 VGS(OFF)2 0.9 1 0.9 1 VDS = 10V, ID = 1 nA Transconductance Ratio gfs1 /gfs2 0.9 1 0.9 1 VDS = 10V, ID = 10 mA 3 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 dB TO78 Package Pin Configuration Dimensions in Inches (mm) 1 Source 1, 2 Gate 1, Drain 1, 4 Case, 5 Drain 2, 6 Gate 2, 7 Source 2, 8 Omitted www.interfet.com