Product Datasheet Search Results:
- 2N2484UB
- Microchip Technology
- Trans GP BJT NPN 60V 0.05A 360mW 4-Pin Case UB Waffle
- JANS DATA-JANS2N2484UB
- Microchip Technology
- Trans GP BJT NPN 60V 0.05A 360mW 4-Pin Case UB Waffle
- 2N2484UB
- Microsemi Corp.
- 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- 2N2484UBC
- Microsemi Corp.
- 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- JAN2N2484UB
- Microsemi Corp.
- 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- JANS2N2484UB
- Microsemi Corp.
- 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- JANS2N2484UBC
- Microsemi Corp.
- 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
- JANS2N2484UB-TR
- Microsemi
- JANS2N2484UB-TR
Product Details Search Results:
Microchip.com/2N2484UB
{"Collector Current (DC) ":"0.05(A)","Transistor Polarity":"NPN","Category ":"Bipolar Small Signal","Mounting":"Surface Mount","Emitter-Base Voltage":"6(V)","Rad Hardened":"No","Packaging":"Waffle","Power Dissipation":"0.36(W)","Operating Temp Range":"-65C to 200C","Output Power":"Not Required(W)","Collector-Base Voltage":"60(V)","DC Current Gain":"45","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
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Microchip.com/JANS DATA-JANS2N2484UB
{"Collector Current (DC) ":"0.05(A)","Transistor Polarity":"NPN","Category ":"Bipolar Small Signal","Mounting":"Surface Mount","Emitter-Base Voltage":"6(V)","Operating Temp Range":"-65C to 200C","Packaging":"Waffle","Power Dissipation":"0.36(W)","Rad Hardened":"No","Output Power":"Not Required(W)","Collector-Base Voltage":"60(V)","DC Current Gain":"45","Package Type":"CASE UB","Configuration":"Single","Pin Count":"4","Number of Elements":"1"}...
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Microsemi.com/2N2484UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"50mA","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 100\u00b5A, 1mA","Series":"-","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N2484(UA)(UB)(UBC)","Current - Collector Cutoff (Max)":"2nA","Supplier Device Package":"UB","Standard Package":"1","Mounti...
1473 Bytes - 05:48:46, 14 November 2024
Microsemi.com/2N2484UBC
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"225","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","T...
1285 Bytes - 05:48:46, 14 November 2024
Microsemi.com/JAN2N2484UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"50mA","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 100\u00b5A, 1mA","Series":"Military, MIL-PRF-19500/376","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N2484(UA)(UB)(UBC)","Current - Collector Cutoff (Max)":"2nA","Supplier Device Package":"UB","Sta...
1495 Bytes - 05:48:46, 14 November 2024
Microsemi.com/JANS2N2484UB
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"225","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR...
1335 Bytes - 05:48:46, 14 November 2024
Microsemi.com/JANS2N2484UBC
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"225","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configuration":"SINGLE","T...
1312 Bytes - 05:48:46, 14 November 2024
Microsemi.com/JANS2N2484UB-TR
858 Bytes - 05:48:46, 14 November 2024
Microsemi.com/JANS DATA-JANS2N2484UB
877 Bytes - 05:48:46, 14 November 2024
Microsemi.com/JANTX2N2484UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"50mA","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 100\u00b5A, 1mA","Series":"Military, MIL-PRF-19500/376","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N2484(UA)(UB)(UBC)","Current - Collector Cutoff (Max)":"2nA","Supplier Device Package":"UB","Sta...
1506 Bytes - 05:48:46, 14 November 2024
Microsemi.com/JANTXV2N2484UB
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"50mA","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"300mV @ 100\u00b5A, 1mA","Series":"Military, MIL-PRF-19500/376","Package / Case":"3-SMD, No Lead","Voltage - Collector Emitter Breakdown (Max)":"60V","Power - Max":"360mW","Packaging":"Bulk","Datasheets":"2N2484(UA)(UB)(UBC)","Current - Collector Cutoff (Max)":"2nA","Supplier Device Package":"-","Stan...
1512 Bytes - 05:48:46, 14 November 2024
Semicoa.com/2N2484UB
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, CERAMIC, CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"225","Collector Current-Max (IC)":"0.0500 A","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Number of Elements":"1","Terminal Position":"DUAL","Transistor Polarity":"NPN","Package Shape":"RECTANGULAR","Configura...
1283 Bytes - 05:48:46, 14 November 2024