JANS DATA-JANS2N2484UB - MICROCHIP TECHNOLOGY

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

NPN SILICON LOW POWER TRANSISTOR

Qualified per MIL-PRF-19500/376

T4-LDS-0058 Rev. 2 (110016) Page 1 of 6

DEVICES LEVELS

2N2484 2N2484UB JAN

2N2484UA 2N2484UBC * JANTX

JANTXV

JANS

* Available to JANS quality level only.

ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit

Collector-Emitter Voltage VCEO 60 Vdc

Collector-Base Voltage VCBO 60 Vdc

Emitter-Base Voltage VEBO 6.0 Vdc

Collector Current IC 50 mAdc

Total Power Dissipation @ TA = +25°C (1)

PT

360 mW

Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C

THERMAL CHARACTERISTICS

Parameters / Test Conditions Symbol Value Unit

Thermal Resistance, Ambient-to-Case

RθJA

°C/W

2N2484

2N2484UA

2N2484UB, UBC

325

275

350

1. See 19500/376 for Thermal Performance Curves.

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

IC = 10mAdc V(BR)CEO 60 Vdc

Collector-Emitter Cutoff Current

VCE = 45Vdc ICES 5.0 ηAdc

Collector-Base Cutoff Current

VCB = 45Vdc

VCB = 60Vdc ICBO 5.0

10

ηAdc

μAdc

Collector-Emitter Cutoff Current

VCE = 5.0Vdc

ICEO 2.0 ηAdc

TO-18 (TO-206AA)

2N2484

2N2484UA

2N2484UB, UBC

(UBC = Ceramic Lid Version)

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0058 Rev. 2 (110016) Page 2 of 6

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERISTICS

Emitter-Base Cutoff Current

IEBO

ηAdc

μAdc

VEB = 5.0Vdc

VEB = 6.0Vdc

2.0

10

ON CHARACTERISTICS (2)

Forward-Current Transfer Ratio

hFE

IC = 1.0

μ

Adc, VCE = 5.0Vdc

IC = 10μAdc, VCE = 5.0Vdc

IC = 100μAdc, VCE = 5.0Vdc

IC = 500μAdc, VCE = 5.0Vdc

IC = 1.0mAdc, VCE = 5.0Vdc

IC = 10mAdc, VCE = 5.0Vdc

45

200

225

250

225

500

675

800

Collector-Emitter Saturation Voltage

IC = 1.0mAdc, IB = 100μAdc VCE(sat) 0.3 Vdc

Base-Emitter Voltage

VCE = 5.0Vdc, IC = 100μAdc VBE(ON) 0.5 0.7 Vdc

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Forward Current Transfer Ratio

|hfe|

IC = 50

μ

Adc, VCE = 5.0Vdc, f = 5.0MHz

IC = 500μAdc, VCE = 5.0Vdc, f = 30MHz

3.0

2.0

0.7

Open Circuit Output Admittance

IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hoe 40

μmhos

Open Circuit Reverse-Voltage Transfer Ratio

IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hre 8.0 x 10-4

Input Impedance

IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hje 3.5 24

kΩ

Small-Signal Short-Circuit Forward Current Transfer Ratio

IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz hfe 250 900

Output Capacitance

VCB = 5.0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 5.0 pF

Input Capacitance

VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 6.0 pF

(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0058 Rev. 2 (110016) Page 3 of 6

PACKAGE DIMENSIONS

NOTE:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18

mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is

uncontrolled in L1 and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

FIGURE 1. Physical dimensions (similar to TO-18).

Dimensions

Symbol Inches Millimeters Notes

Min Max Min Max

CD .178 .195 4.52 4.95

CH .170 .210 4.32 5.33

HD .209 .230 5.31 5.84

LC .100 TP 2.54 TP 6

LD .016 .021 0.41 0.53 7,8

LL .500 .750 12.70 19.05 7,8

LU .016 .019 0.41 0.48 7,8

L1 .050 1.27 7,8

L2 .250 6.35 7,8

P .100 2.54

Q .040 1.02 5

TL .028 .048 0.71 1.22 3,4

TW .036 .046 0.91 1.17 3

r .010 0.25 10

α 45° TP 45° TP 6

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0058 Rev. 2 (110016) Page 4 of 6

NOTE:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Dimension CH controls the overall package thickness.

When a window lid is used, dimension CH must increase

by a minimum of .010 inch (0.254 mm) and a maximum

of .040 inch (1.020 mm).

4. The corner shape (square, notch, radius) may vary at the

manufacturer's option, from that shown on the drawing.

5. Dimensions LW2 minimum and L3 minimum and the

appropriate castellation length define an unobstructed

three-dimensional space traversing all of the ceramic

layers in which a castellation was designed.

(Castellations are required on the bottom two layers,

optional on the top ceramic layer.) Dimension LW2

maximum and L3 maximum define the maximum width

and depth of the castellation at any point on its surface.

Measurement of these dimensions may be made prior to

solder dipping.

6. The co-planarity deviation of all terminal contact points,

as defined by the device seating plane, shall not exceed

.006 inch (0.15mm) for solder dipped leadless chip

carriers.

7. In accordance with ASME Y14.5M, diameters are

equivalent to φx symbology.

FIGURE 2. Physical dimensions, surface mount (2N2484UA).

Dimensions

Symbol Inches Millimeters Notes

Min Max Min Max

BL .215 .225 5.46 5.71

BL2 .225 5.71

BW .145 .155 3.68 3.94

BW2 .155 3.94

CH .061 .075 1.55 1.91 3

L3 .003 .007 0.08 0.18 5

LH .029 .042 0.74 1.07

LL1 .032 .048 0.81 1.22

LL2 .072 .088 1.83 2.24

LS .045 .055 1.14 1.39

LW .022 .028 0.56 0.71

LW2 .006 .022 0.15 0.56 5

Pin no. 1 2 3 4

Transistor Collector Emitter Base N/C

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0058 Rev. 2 (110016) Page 5 of 6

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Hatched areas on package denote metallized areas

4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.

5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 3. Physical dimensions, surface mount (2N2484UB).

Dimensions Dimensions

Symbol Inches Millimeters Note Symbol Inches Millimeters Note

Min Max Min Max Min Max Min Max

BH .046 .056 1.17 1.42 LS1 .036 .040 0.91 1.02

BL .115 .128 2.92 3.25 LS2 .071 .079 1.80 2.01

BW .085 .108 2.16 2.74 LW .016 .024 0.41 0.61

CL .128 3.25 r .008 .203

CW .108 2.74 r1 .012 .305

LL1 .022 .038 0.56 0.97 r2 .022 .559

LL2 .017 .035 0.43 0.89

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland

1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

T4-LDS-0058 Rev. 2 (110016) Page 6 of 6

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = connected to the lid braze ring.

4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

FIGURE 4. Physical dimensions, surface mount (2N2484UBC).

Dimensions Dimensions

Symbol Inches Millimeters Note Symbol Inches Millimeters Note

Min Max Min Max Min Max Min Max

BH .046 .071 1.17 1.80

LS1 .036 .040 0.91 1.02

BL .115 .128 2.92 3.25

LS2 .071 .079 1.80 2.01

BW .085 .108 2.16 2.74

LW .016 .024 0.41 0.61

CL .128 3.25 r .008 .203

CW .108 2.74 r1 .012 .305

LL1 .022 .038 0.56 0.97 r2 .022 .559

LL2 .017 .035 0.43 0.89