2N6036
PNP Darlington
Power Transistor
Features
• This device is designed for general purpose amplifier and low-speed
switching applications.
Maximum Ratings*
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current, Continuous
Peak 4.0
8.0 A
IB Base Current 100 mA
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
PD Total Device Dissipation
Derate above 25OC 40
0.32 W
W/OC
PD Total Device Dissipation
Derate above 25OC 1.5
0.012 W
W/OC
RJC Thermal Resistance, Junction to Case 3.12 OC/W
RJA Thermal Resistance, Junction to Ambient 83.3 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Breakdown Voltage (1)
(IC=100mAdc, IE=0) 80 --- Vdc
ICEO Collector Cutoff Current
(VCB=60Vdc, IE=0) --- 100 uAdc
ICEX Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=80Vdc, VEB(off)=1.5Vdc, TC=125
OC) ---
--- 100
500 uA
mA
ICBO Collector-Cutoff Current
(VCB=80Vdc, IE=0) --- 0.5 mAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 2.0 mAdc
*Indicates JEDEC Registered Data
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E
A
D
F
G
H
J J
C
B
L
M
P
Q
N
R
K
PIN 1. EMITTER
PIN 2. COLLECTOR
1 2 3
PIN 3. BASE
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Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
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MCC
Symbol Parameter Min Max Units
DYNAMIC CHARACTERISTICS
h
FE
DC Current Gain
(V
CE
=3.0Vdc, I
C
=0.5Adc)
(V
CE
=3.0Vdc, I
C
=2.0Adc)
(V
CE
=3.0Vdc, I
C
=4.0Adc)
500
750
100
---
15000
---
---
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=2.0Adc, I
B
=8.0mA
dc)
(I
C
=4.0Adc, I
B
=40mAdc) --- 2.0
3.0 Vdc
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=4.0Adc, I
B
=40mAdc) --- 4.0 Vdc
V
BE(on)
Base-Emitter On Voltage
(I
C
=2.0Adc, V
CE
=3.0Vdc) --- 2.8 Vdc
DYNAMIC CHARACTERISTICS
|h
fe
| Small-Signal Current-Gain
(I
C
=0.75Adc, V
CE
=10Vdc, f=1.0MHz
) 25 --- ---
C
ob
Output Capacitance
(V
CB
=10Vdc, I
E
=0, f=0.1MHz) --- 200 pF
MCC
2N6036
40
00 20 40 60 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
20
10
30
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
200
0.04
VR, REVERSE VOLTAGE (VOLTS)
10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2
C, CAPACITANCE (pF)
100
50
30
TC = 25°C
Cib
70
Cob
Figure 2. Capacitance
20
6.0 10 20
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Revision: 2 2003/04/30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
6.0 k
0.04
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
300 0.06 0.1 0.2 0.6 1.0 4.0
600
800
400
hFE, DC CURRENT GAIN
1.0 k
2.0 k
VCE = 3.0 V
0.4 2.0
Figure 4. Collector Saturation Region
3.4
0.1
IB, BASE CURRENT (mA)
0.6 0.2 1.0 2.0 10 100
2.2
1.8
IC =
0.5 A
TJ = 25°C
1.0 A
2.6
3.0
0.5 5.0
2.2
0.04
IC, COLLECTOR CURRENT (AMP)
0.06 0.1 0.2 0.4 0.6 2.0 4.0
1.8
1.4
1.0
0.6
0.2
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 5. “On” Voltages
VBE @ VCE = 3.0 V
1.0
4.0 k
3.0 k
TC = 125°C
25°C
-55°C
20 50
6.0 k
0.04
IC, COLLECTOR CURRENT (AMP)
300 0.06 0.1 0.2 0.6 1.0 4.0
600
800
400
hFE, DC CURRENT GAIN
1.0 k
2.0 k
VCE = 3.0 V
0.4 2.0
4.0 k
3.0 k
TJ = 125°C
25°C
-55°C
1.4
1.0
2.0 A 4.0 A
3.4
0.1
IB, BASE CURRENT (mA)
0.6 0.2 1.0 2.0 10 100
2.2
1.8
IC =
0.5 A
TJ = 25°C
1.0 A
2.6
3.0
0.5 5.0 20 50
1.4
1.0
2.0 A 4.0 A
IC, COLLECTOR CURRENT (AMP)
2.2
0.04 0.06 0.1 0.2 0.4 0.6 2.0 4.0
1.8
1.4
1.0
0.6
0.2
V, VOLTAGE (VOLTS)
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
MCC
2N6036
www.mccsemi.com
Revision: 2 2003/04/30