JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAV199DW Multi-Chip DIODES
FEATURES
Power dissipation
P
CM: 0.2 W (Tamb=25℃)
Collector current
I
F : 200 mA
Collector-base voltage
V
R : 85 V
Operating and storage junction temperature range
T
J,Tstg: -55℃ to +150℃
MARKING:K52
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Reverse breakdown voltage V(BR) R I
R= 100µA 85 V
Reverse voltage leakage current IR V
R=75V
5 nA
Forward voltage VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
0.9
1.0
1.1
1.25
V
Junction capacitance Cj V
R=0V f=1MHz 2 pF
Reveres recovery time trr
IF=IR=10mA
Irr=0.1ХIR
RL=100Ω
3 nS
SOT-363
Typical Characteristics BAV199DW
