BZX79-C27/A52R - NXP - Pdf.Support

DATA SH EET

Product speciﬁcation

Supersedes data of 1999 May 25 2002 Feb 27

DISCRETE SEMICONDUCTORS

BZX79 series

Voltage regulator diodes

M3D176

2002 Feb 27 2

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

FEATURES

•Total power dissipation: max. 500 mW

•Two tolerance series: ±2%, and approx. ±5%

•Working voltage range: nom. 2.4 to 75 V (E24 range)

•Non-repetitive peak reverse power dissipation:

max. 40 W.

APPLICATIONS

•Low voltage stabilizers or voltage references.

DESCRIPTION

Low-powervoltageregulatordiodesinhermeticallysealed

leaded glass SOD27 (DO-35) packages. The diodes are

available in the normalized E24 ±2% (BZX79-B) and

approx. ±5% (BZX79-C) tolerance range. The series

consists of 37 types with nominal working voltages from

2.4 to 75 V.

Fig.1 Simplified outline (SOD27; DO-35) and

symbol.

The diodes are type branded.

handbook, halfpage

MAM239

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed circuit-board without metallization pad; lead length max.

2. Tie-point temperature ≤50 °C; max. lead length 8 mm.

ELECTRICAL CHARACTERISTICS

Total BZX79-B and BZX79-C series

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZSM non-repetitive peak reverse current tp= 100 µs; square wave;

Tj=25°C prior to surge see Tables 1 and 2 A

Ptot total power dissipation Tamb =50°C; note 1 −400 mW

Tamb =50°C; note 2 −500 mW

PZSM non-repetitive peak reverse power

dissipation tp= 100 µs; square wave;

Tj=25°C prior to surge; see Fig.3 −40 W

Tstg storage temperature −65 +200 °C

Tjjunction temperature −65 +200 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF= 10 mA; see Fig.4 0.9 V

2002 Feb 27 3

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

IRreverse current

BZX79-B/C2V4 VR=1V 50 µA

BZX79-B/C2V7 VR=1V 20 µA

BZX79-B/C3V0 VR=1V 10 µA

BZX79-B/C3V3 VR=1V 5 µA

BZX79-B/C3V6 VR=1V 5 µA

BZX79-B/C3V9 VR=1V 3 µA

BZX79-B/C4V3 VR=1V 3 µA

BZX79-B/C4V7 VR=2V 3 µA

BZX79-B/C5V1 VR=2V 2 µA

BZX79-B/C5V6 VR=2V 1 µA

BZX79-B/C6V2 VR=4V 3 µA

BZX79-B/C6V8 VR=4V 2 µA

BZX79-B/C7V5 VR=5V 1 µA

BZX79-B/C8V2 VR= 5 V 700 nA

BZX79-B/C9V1 VR= 6 V 500 nA

BZX79-B/C10 VR= 7 V 200 nA

BZX79-B/C11 VR= 8 V 100 nA

BZX79-B/C12 VR= 8 V 100 nA

BZX79-B/C13 VR= 8 V 100 nA

BZX79-B/C15 to BZX79-B/C75 VR= 0.7VZnom 50 nA

SYMBOL PARAMETER CONDITIONS MAX. UNIT

2002 Feb 27 4

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

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Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24

Tj=25°C unless otherwise speciﬁed.

BZX79-

Bxxx

Cxxx

WORKING VOLTAGE

VZ(V)

at IZtest =5mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ(mV/K)

at IZtest =5mA

(see Figs 5 and 6)

DIODECAP.

Cd(pF)

at f = 1 MHz;

VR=0V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp= 100 µs; Tamb =25°C

Tol. ±2% (B) Tol. approx.

±5% (C) at IZtest = 1 mA at IZtest =5mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0

2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0

3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0

3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0

3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0

3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0

4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0

4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0

5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0

5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0

6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0

6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0

7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0

8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0

9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0

10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0

11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5

12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5

13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5

15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0

16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5

18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5

20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5

22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25

24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25

2002 Feb 27 5

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

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Table 2 Per type, BZX79-B/C27 to BZX79-B/C75

Tj=25°C unless otherwise speciﬁed.

BZX79-

Bxxx

Cxxx

WORKING VOLTAGE

VZ(V)

at IZtest =2mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ(mV/K)

at IZtest =2mA

(see Figs 5 and 6)

DIODECAP.

Cd(pF)

at f = 1 MHz;

VR=0V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A)

at tp= 100 µs; Tamb =25°C

Tol. ±2% (B) Tol. approx.

±5% (C) at IZtest = 0.5 mA at IZtest =2mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0

30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0

33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9

36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8

39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7

43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6

47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5

51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4

56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3

62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3

68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25

75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

2002 Feb 27 6

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W

Rth j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W

GRAPHICAL DATA

handbook, full pagewidth

10−111010

2103104105

MBG930

102

103

tp (ms)

tptp

δ =

0.02

0.01

≤0.001

0.75

0.50

0.33

0.20

0.10

0.05

δ = 1

Rth j-a

(K/W)

Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.

2002 Feb 27 7

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

Fig.3 Maximum permissible non-repetitive peak

reverse power dissipation versus duration.

handbook, halfpage

MBG801

103

1 duration (ms)

PZSM

(W)

102

10−1

(1)

(2)

(1) Tj=25°C (prior to surge).

(2) Tj= 150 °C (prior to surge).

Fig.4 Typical forward current as a function of

forward voltage.

handbook, halfpage

0.6 1.0

300

100

200

MBG781

0.8 VF (V)

(mA)

Tj=25°C.

Fig.5 Temperature coefficient as a function of

working current; typical values.

handbook, halfpage

060

−2

−3

−1

MBG783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

BZX79-B/C2V4 to BZX79-B/C4V3.

Tj=25to150°C.

Fig.6 Temperature coefficient as a function of

working current; typical values.

handbook, halfpage

02016

−5

MBG782

4812 I

(mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

BZX79-B/C4V7 to BZX79-B/C12.

Tj=25to150°C.

2002 Feb 27 8

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

Note

1. The marking band indicates the cathode.

SOD27 DO-35A24 SC-40 97-06-09

Hermetically sealed glass package; axial leaded; 2 leads SOD27

UNIT b

max.

mm 0.56

max. G1

max.

25.44.251.85

min.

DIMENSIONS (mm are the original dimensions)

LD L

(1)

0 1 2 mm

scale

2002 Feb 27 9

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyother conditionsabovethose given inthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythat suchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusing orsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofany ofthese products,conveysno licenceor title

under any patent, copyright, or mask work right to these

products,and makes no representationsorwarrantiesthat

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2002 Feb 27 10

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

NOTES

2002 Feb 27 11

Philips Semiconductors Product speciﬁcation

Voltage regulator diodes BZX79 series

NOTES

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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Contact information

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Printed in The Netherlands 613514/03/pp12 Date of release: 2002 Feb 27 Document order number: 9397 750 09387