MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6676 2N6677 2N6678 UNITS
Collector-Emitter Voltage VCEV 450 550 650 V
Collector-Emitter Voltage VCEO 300 350 400 V
Emitter-Base Voltage VEBO 8.0 V
Continuous Collector Current IC 15 A
Peak Collector Current ICM 20 A
Continuous Base Current IB 5.0 A
Power Dissipation PD 175 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 1.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=Rated VCEV, VBE(off)=1.5V 100 μA
ICEV V
CE=Rated VCEV, VBE(off)=1.5V, TC=100°C 1.0 mA
IEBO V
EB=8.0V 2.0 mA
BVCEO I
C=200mA (2N6676) 300 V
BVCEO I
C=200mA (2N6677) 350 V
BVCEO I
C=200mA (2N6678) 400 V
VCE(SAT) I
C=15A, IB=3.0A 1.5 V
VBE(SAT) I
C=15A, IB=3.0A 1.5 V
hFE V
CE=3.0V, IC=15A 8.0
Cob V
CB=10V, IE=0, f=1.0MHz 500 pF
ft V
CE=10V, IC=1.0A, f=5.0MHz 3.0 10 MHz
td 0.1 μs
tr 0.6 μs
ts 2.5 μs
tf 0.5 μs
2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6676 SERIES
types are NPN Silicon Power Transistors designed for
high voltage switching applications.
MARKING: FULL PART NUMBER
VCC=200V, IC=15A, IB1=IB2=3.0A
tp=20μs, Duty Cycle≤2.0%
VBB≈6.0V, RL=13.5Ω
TO-3 CASE
R0 (26-July 2010)
www.centralsemi.com
2N6676
2N6677
2N6678
NPN SILICON
POWER TRANSISTOR
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
www.centralsemi.com
R0 (26-July 2010)
