IKW25T120
TrenchStop® Series
Power Semiconductors 1 Rev. 2.2 Sep 08
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP314D
• Short circuit withstand time – 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C VCE(sat),Tj=25°C Tj,max Marking Code Package
IKW25T120 1200V 25A 1.7V 150°CK25T120 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current
TC = 25°C
TC = 100°C
IC
50
25
Pulsed collector current, tp limited by Tjmax ICpuls 75
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
- 75
Diode forward current
TC = 25°C
TC = 100°C
IF
50
25
Diode pulsed current, tp limited by Tjmax IFpuls 75
A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C
tSC 10
µs
Power dissipation
TC = 25°C
Ptot 190 W
Operating junction temperature Tj -40...+150
Storage temperature Tstg -55...+150
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-247-3
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IKW25T120
TrenchStop® Series
Power Semiconductors 2 Rev. 2.2 Sep 08
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
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IKW25T120
TrenchStop® Series
Power Semiconductors 3 Rev. 2.2 Sep 08
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 0.65
Diode thermal resistance,
junction – case
RthJCD 1.0
Thermal resistance,
junction – ambient
RthJA 40
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA1200 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=25A
Tj=25°C
Tj=125°C
Tj=150°C
-
-
-
1.7
2.0
2.2
2.2
-
-
Diode forward voltage
VF VGE=0V, IF=25A
Tj=25°C
Tj=125°C
Tj=150°C
-
-
-
1.7
1.7
1.7
2.2
-
-
Gate-emitter threshold voltage VGE(th) IC=1mA,
VCE=VGE
5.0 5.8 6.5
V
Zero gate voltage collector current
ICES VCE=1200V,
VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
0.25
2.5
mA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V, IC=25A - 16 - S
Integrated gate resistor RGint 8
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IKW25T120
TrenchStop® Series
Power Semiconductors 4 Rev. 2.2 Sep 08
Dynamic Characteristic
Input capacitance Ciss - 1860 -
Output capacitance Coss - 96 -
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 82 -
pF
Gate charge QGate VCC=960V, IC=25A
VGE=15V
- 155 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 13 - nH
Short circuit collector current1) IC(SC) VGE=15V,tSC≤10µs
VCC = 600V,
Tj = 25°C
- 150 - A
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 50 -
Rise time tr - 30 -
Turn-off delay time td(off) - 560 -
Fall time tf - 70 -
ns
Turn-on energy Eon - 2.0 -
Turn-off energy Eoff - 2.2 -
Total switching energy Ets
Tj=25°C,
VCC=600V,IC=25A
VGE=0/15V,
RG=22Ω,
L
σ
2)=180nH,
C
σ
2)=39pF
Energy losses include
“tail” and diode
reverse recovery. - 4.2 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr - 200 - ns
Diode reverse recovery charge Qrr - 2.3 µC
Diode peak reverse recovery current Irrm - 21 A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25°C,
VR=600V, IF=25A,
diF/dt=800A/µs
- 390 -
A/µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
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IKW25T120
TrenchStop® Series
Power Semiconductors 5 Rev. 2.2 Sep 08
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 50 -
Rise time tr - 32 -
Turn-off delay time td(off) - 660 -
Fall time tf - 130 -
ns
Turn-on energy Eon - 3.0 -
Turn-off energy Eoff - 4.0 -
Total switching energy Ets
Tj=150°C
VCC=600V,IC=25A,
VGE=0/15V,
RG= 22Ω,
L
σ
1)=180nH,
C
σ
1)=39pF
Energy losses include
“tail” and diode
reverse recovery. - 7.0 -
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr - 320 - ns
Diode reverse recovery charge Qrr - 5.2 - µC
Diode peak reverse recovery current Irrm - 29 - A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=150°C
VR=600V, IF=25A,
diF/dt=800A/µs
- 320
A/µs
1) Leakage inductance L
σ
and Stray capacity Cσ due to dynamic test circuit in Figure E.
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IKW25T120
TrenchStop® Series
Power Semiconductors 6 Rev. 2.2 Sep 08
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
1
0A
2
0A
3
0A
4
0A
5
0A
6
0A
7
0A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0,1A
1A
10A
DC
10µs
tp=3µs
50µs
500µs
20ms
150µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 22Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
50W
100W
150W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
30A
40A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 150°C)
Ic
Ic
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IKW25T120
TrenchStop® Series
Power Semiconductors 7 Rev. 2.2 Sep 08
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V
0A
1
0A
2
0A
3
0A
4
0A
5
0A
6
0A
7
0A
15V
7V
9V
11V
13V
VGE=17V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V 6V
0A
10A
20A
30A
40A
50A
60A
70A
15V
7V
9V
11V
13V
VGE=17V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 150°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V 10V 12V
0A
10A
2
0A
3
0A
4
0A
5
0A
6
0A
7
0A
25°C
TJ=150°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
IC=25A
IC=50A
IC=15A
IC=8A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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IKW25T120
TrenchStop® Series
Power Semiconductors 8 Rev. 2.2 Sep 08
t, SWITCHING TIMES
0A 10A 20A 30A 40A
1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
5Ω 15Ω 25Ω 35Ω 45Ω
1 ns
10 ns
100 ns tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=22,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
tr
tf
td(on)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=25A, RG=22,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 1.0mA)
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IKW25T120
TrenchStop® Series
Power Semiconductors 9 Rev. 2.2 Sep 08
E, SWITCHING ENERGY LOSSES
10A 20A 30A 40A
0,0mJ
2,0mJ
4,0mJ
6,0mJ
8,0mJ
1
0,0mJ
1
2,0mJ
1
4,0mJ
Ets*
Eoff
*) Eon and Etsinclude losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
5Ω 15Ω 25Ω 35Ω
0 mJ
2 mJ
4 mJ
6 mJ
8 mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=22,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=25A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
50°C 100°C 150°C
0mJ
1mJ
2mJ
3mJ
4
mJ
5mJ
6mJ
7mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
E, SWITCHING ENERGY LOSSES
400V 500V 600V 700V 800V
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
7mJ
8mJ
9mJ
10mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=25A, RG=22,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=25A, RG=22,
Dynamic test circuit in Figure E)
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IKW25T120
TrenchStop® Series
Power Semiconductors 10 Rev. 2.2 Sep 08
VGE, GATE-EMITTER VOLTAGE
0nC 50nC 100nC 150nC 200nC
0V
5V
10V
15V
960V
240V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=25 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
12V 14V 16V
0µs
5µs
10µs
15µs
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
50A
100A
150A
200A
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
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IKW25T120
TrenchStop® Series
Power Semiconductors 11 Rev. 2.2 Sep 08
VCE, COLLECTOR-EMITTER VOLTAGE
0V
2
00V
4
00V
600V
0A
20A
40A
60A
1.5us
1us
0.5us
0us
IC
VCE
IC, COLLECTOR CURRENT
0V
200V
400V
600V
0A
2
0
A
4
0
A
6
0
A
1.5us1us
0.5us0us
IC
VCE
t, TIME t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=22, Tj = 150°C,
Dynamic test circuit in Figure E)
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=22, Tj = 150°C,
Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
10µs 100µs 1ms 10ms 100ms
0-3K/W
0-2K/W
0-1K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
R,(K/W)
τ
, (s)
0.229 1.10*10-1
0.192 1.56*10-2
0.174 1.35*10-3
0.055 1.52*10-4
C1=
τ
1/R1
R1R2
C2=
τ
2
/
R2
R,(K/W)
τ
, (s)
0.282 1.01*10-1
0.317 1.15*10-2
0.294 1.30*10-3
0.107 1.53*10-4
C1=
τ
1/R1
R1R2
C2=
τ
2
/
R2
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IKW25T120
TrenchStop® Series
Power Semiconductors 12 Rev. 2.2 Sep 08
trr, REVERSE RECOVERY TIME
400A/µs 600A/µs 800A/µs 1000A/µs
0ns
100ns
200ns
300ns
400ns
500ns
TJ=25°C
TJ=150°C
Qrr, REVERSE RECOVERY CHARGE
400A/µs 600A/µs 800A/µs 1000A/µs
0µC
1µC
2µC
3µC
4µC
5µC
TJ=25°C
TJ=150°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
Irr, REVERSE RECOVERY CURRENT
400A/µs 600A/µs 800A/µs 1000A/µs
0A
5A
1
0A
1
5A
2
0A
2
5A
3
0A
TJ=25°C
TJ=150°C
d
i
rr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
400A/µs 600A/µs 800A/µs 1000A/µs
-0A/µs
-100A/µs
-200A/µs
-300A/µs
-400A/µs TJ=25°C
TJ=150°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=25A,
Dynamic test circuit in Figure E)
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IKW25T120
TrenchStop® Series
Power Semiconductors 13 Rev. 2.2 Sep 08
IF, FORWARD CURRENT
0V 1V 2V
0A
2
0A
4
0A
6
0A 150°C
TJ=25°C
VF, FORWARD VOLTAGE
-50°C 0°C 50°C 100°C
0,0V
0,5V
1,0V
1,5V
2,0V
25A
15A
IF=50A
8A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as
a function of forward voltage
Figure 28. Typical diode forward voltage as a
function of junction temperature
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IKW25T120
TrenchStop® Series
Power Semiconductors 14 Rev. 2.2 Sep 08
5.44
0.55
6.04
5.49
1.68
3.68
4.17
20.82
16.25
15.70
1.05
3.50
19.80
13.10
3
MIN
1.90
4.90
2.27
1.07
1.85
1.90
0.238
0.216
0.066
0.145
0.164
0.075
0.820
0.640
0.618
0.022
0.193
0.089
0.042
0.073
0.041
0.075
0.138
0.780
0.516
0.68
6.30
6.00
17.65
2.60
5.10
14.15
3.70
21.10
16.03
20.31
1.35
4.47
2.41
5.16
2.53
1.33
2.11
MAX
2.16
0.027
0.214
3
0.248
0.236
0.695
0.557
0.102
0.201
0.831
0.631
0.053
0.146
0.799
0.176
MIN MAX
0.095
0.203
0.099
0.052
0.083
0.085
0
7.5mm
55
0
17-12-2007
03
Z8B00003327
2.87
2.87
0.113
0.113
3.38
3.13
0.133
0.123
M
M
PG-TO247-3
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IKW25T120
TrenchStop® Series
Power Semiconductors 15 Rev. 2.2 Sep 08
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,
v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=180nH
and Stray capacity Cσ =39pF.
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IKW25T120
TrenchStop® Series
Power Semiconductors 16 Rev. 2.2 Sep 08
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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