2SD2088
2003-02-04
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2088
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
• Zener diode included between collector and base.
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 ± 10 V
Collector-emitter voltage VCEO 60 ± 10 V
Emitter-base voltage VEBO 8 V
Collector current IC 2 A
Base current IB 0.5 A
Collector power dissipation PC 0.9 W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Equivalent Circuit
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
BASE
EMITTER
≈ 4 kΩ ≈ 800 Ω
COLLECTOR
2SD2088
2003-02-04
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 45 V, IE = 0 ― ― 10 µA
Emitter cut-off current IEBO V
EB = 8 V, IC = 0 ― ― 4 mA
Collector-emitter breakdown voltage V (BR) CEO I
C = 10 mA, IB = 0 50 60 70 V
DC current gain hFE V
CE = 2 V, IC = 1 A 2000 ― ―
Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 1 mA ― ― 1.5 V
Base-emitter saturation voltage VBE (sat) I
C = 1 A, IB = 1 mA ― ― 2.0 V
Transition frequency fT V
CE = 2 V, IC = 0.5 A ― 100 ― MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz ― 20 ― pF
Unclamped inductive load energy ES/B L = 10 mH, IC = 1.3 A, IB = ±50 mA 8.4 ― ― mJ
Turn-on time ton ― 0.4 ―
Storage time tstg ― 4.0 ―
Switching time
Fall time tf
IB1 = −IB2 = 1 mA, duty cycle ≤ 1%
― 0.6 ―
µs
Marking
Explanation of Lot No.
IB1
20 µs
IB2
VCC = 30 V
Output
30 Ω
IB2
IB1
Input
D2088 Product No.
Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2SD2088
2003-02-04
3
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
hFE – IC
Collector current IC (A)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
0.3
3
Ta = −55°C
100
25
Common emitter
IC/IB = 1000
1
1 3
0.6
0
0
0.8
1.6
0.8 1.6 2.4 3.2
Common emitter
VCE = 2 V
Ta = 100°C
25
−55
4.0
0.4
1.2
2.0
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
1.0
2.0
0.5
1.5
0
0
80 120 40 200 160
0
0
0.8
1.6
2 4 6 8
Common emitter
Ta = 25°C
IB = 170 µA
180
185
175
250
500
200
10
0.4
1.2
2.0
PC = 0.9 W
1
3
Common emitter
IC/IB = 1000
Ta = −55°C
25
100
1 3
5
0.3 0.5
DC current gain hFE
10000
0.01
30
500
1000
3000
5000
0.03 0.1 0.3 1 5
Ta = 100°C
25
−55
Common emitter
VCE = 2 V
3
50
100
300
2SD2088
2003-02-04
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Collector-emitter voltage VCE (V)
Safe Operating Area
Collector current IC (A)
1 10
0.01
0.1
5
0.05
0.1
0.3
0.5
1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
100 µs*
DC operation
Ta = 25°C
100
0.3
3
3 50 30
0.03
2SD2088
2003-02-04
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000707EA
A
RESTRICTIONS O N PRODUCT USE
