12
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ71 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS 50 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 50 V
Continuous Drain Current, TC = 55oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID14 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 56 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD40 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 50 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V
Zero Gate Voltage Drain Current IDSS TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 9A, VGS = 10V (Figure 8) - 0.09 0.1 Ω
Forward Transconductance (Note 2) gfs VDS = 25V, ID = 9A (Figure 11) 3.0 5.2 - S
Turn-On Delay Time td(ON) VCC = 30V, ID≈ 3A, VGS = 10V, RGS = 50Ω,
RL = 10Ω-2030 ns
Rise Time tr-5585 ns
Turn-Off Delay Time td(OFF) -7090 ns
Fall Time tf- 80 110 ns
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10) - 480 650 pF
Output Capacitance COSS - 280 450 pF
Reverse Transfer Capacitance CRSS - 160 280 pF
Thermal Resistance Junction to Case RθJC ≤ 3.1 oC/W
Thermal Resistance Junction to Ambient RθJA ≤ 75 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD TC = 25oC--14A
Pulsed Source to Drain Current ISDM TC = 25oC--56A
Source to Drain Diode Voltage VSD TJ = 25oC, ISD = 28A, VGS = 0V, (Figure 12) - 1.6 1.8 V
Reverse Recovery Time trr TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs,
VR = 30V - 120 - ns
Reverse Recovery Charge QRR - 0.15 - µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 820µH, IPEAK = 14A. (See Figures 14 and 15).
BUZ71