BFS17W
Jul-13-20011
NPN Silicon RF Transistor
For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
1
3
VSO05561
2
Type Marking Pin Configuration Package
BFS17W MCs 1 = B 2 = E 3 = C SOT323
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 2.5
Collector current IC25 mA
Peak collector current, f = 10 MHz ICM 50
Total power dissipation
TS
93 °C 1) Ptot 280 mW
Junction temperature T
j
150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS
205 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFS17W
Jul-13-20012
Electrical Characteristics a TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
min. max.typ.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 - V-
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 25 V, IE = 0
ICBO
-
-
-
-
µA
0.05
10
Emitter-base cutoff current
VEB = 2.5 V, IC = 0 IEBO - 100-
DC current gain
IC = 2 mA, VCE = 1 V
IC = 25 mA, VCE = 1 V
hFE
20
20
-
150
-
-
70
Collector-emitter saturation voltage
IC = 10 mA, IB = 1 mA VCEsat - 0.1 0.4 V
BFS17W
Jul-13-20013
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
min. max.typ.
AC characteristics
Transition frequency
IC = 2 mA, VCE = 5 V, f = 200 MHz
IC = 25 mA, VCE = 5 V, f = 200 MHz
fT
1
1.3
1.4
2.5
GHz
-
-
Collector-base capacitance
VCB = 5 V, f = 1 MHz Ccb 0.6- pF0.8
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz Cce 0.26 --
Input capacitance
VEB = 0.5 V, IC = 0 , f = 1 MHz Cibo - -1.45
Output capacitance
VCE = 5 V, VBE = 0 , f = 1 MHz Cobs - - 1.5
Noise figure
IC = 2 mA, VCE = 5 V, f = 800 MHz,
ZS = 0
F3.5- dB5
Transducer gain
IC = 20 mA, VCE = 5 V, ZS = ZL = 50
,
f = 500 MHz
|S21e|212.7 --
Linear output voltage
IC = 14 mA, VCE = 5 V, dim = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50
V01=V02 - mV-100
Third order intercept point
IC = 14 mA, VCE = 5 V, ZS = ZL = 50
,
f = 800 MHz
IP3- 23 - dBm
BFS17W
Jul-13-20014
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
200
240
mW
320
Ptot
Permissible Pulse Load RthJS = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFS17W
Jul-13-20015
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 4 8 12 16 20 V26
VCB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
pF
1.3
C
cb
Transition frequency fT = f (IC)
VCE = Parameter
0 5 10 15 20 mA 30
IC
0.0
0.5
1.0
1.5
2.0
GHz
3.0
f
T
10V
5V
3V
2V
1V
0.7V
