©2002 Fairchild Semiconductor Corporation SGH30N60RUFD Rev. B1
IGBT
SGH30N60RUFD
SGH30N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGB Ts) provide low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power s upplies ( UPS) and general inverter s
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Charac teris tics
Symbol Description SGH30N60RUFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C48 A
Collector Current @ TC = 100°C30 A
ICM (1) Pulsed Collector Current 90 A
IFDiode Continuous Forward Current @ TC = 100°C25 A
IFM Diode Maximum Forward Current 220 A
TSC Short Circuit Withstand Time @ TC =100°C10 us
PDMaximum Power Dissipation @ TC = 25°C 235 W
Maximum Power Dissipation @ TC = 100°C90 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for So ldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to- Case -- 0.53 °C/W
RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 0.83 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics , and servo controls.
GCETO-3PN
G
C
E
G
C
E
SGH30N60RUFD Rev. B1
SGH30N60RUFD
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G -E Th reshold Voltage IC = 30mA, VCE = VGE 5.0 6.0 8.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 30A, VGE = 15V -- 2.2 2.8 V
IC = 48A, VGE = 15V -- 2.5 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 1970 -- pF
Coes Output Capacitance -- 310 -- pF
Cres Reverse Transfer Capacitance -- 74 -- pF
Switching Characteristics
td(on) Turn- On Delay Time
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 30 -- ns
trRise Time -- 65 -- ns
td(off) Turn-Off D e l a y Time -- 54 80 ns
tfFall Time -- 138 200 ns
Eon Turn-On Switching Loss -- 919 -- uJ
Eoff Tu r n -Off Switchi ng Lo s s -- 814 -- uJ
Ets Total Switching Loss -- 1733 2430 uJ
td(on) Turn- On Delay Time
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 34 -- ns
trRise Time -- 67 -- ns
td(off) Turn-Off D e l a y Time -- 60 90 ns
tfFall Time -- 281 400 ns
Eon Turn-On Switching Loss -- 921 -- uJ
Eoff Turn- Off Sw it ching Loss -- 1556 -- uJ
Ets Total Switching Loss -- 2477 3470 uJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V
@ TC = 100°C 10 -- -- us
QgTotal Gate Charge VCE = 300 V, IC = 30A,
VGE = 15V
-- 85 120 nC
Qge Gate-Emitter Charge -- 17 25 nC
Qgc Gate-Collector Charge -- 39 55 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward V oltage IF = 25A TC = 25°C-- 1.4 1.7 V
TC = 100°C-- 1.3 --
trr Diode Reverse Recovery Time
IF= 25A,
di/dt = 200 A/us
TC = 25°C-- 50 95 ns
TC = 100°C-- 105 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 4.5 10 A
TC = 100°C-- 8.5 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 112 375 nC
TC = 100°C-- 420 --
SGH30N60RUFD Rev. B1
SGH30N60RUFD
©2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Vo ltage vs. VGE
02468
0
10
20
30
40
50
60
70
80
90 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collec tor - Em itter Voltage, VCE [V]
110
0
10
20
30
40
50
60
70
80
90
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125 ℃ - -----
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
-50 0 50 100 150
0
1
2
3
4
5
30A
60A
45A
IC = 15A
Common Emitter
VGE = 15V
Co llector - Emitter Voltage, V
CE [V]
Case Tem perature, TC [℃]
4 8 12 16 20
0
4
8
12
16
20 Common Emitter
TC = 25℃
60A
30A
IC = 15A
Collecto r - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20 Comm on Emitter
TC = 125℃
60A
30A
IC = 15A
Collec to r - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
0
5
10
15
20
25
30
35
40
0.1 1 10 100 1000
Duty cycle : 50%
TC = 100℃
Power Dissipation = 45W
VCC = 300V
Load Curren t : p eak of s q uar e w ave
Frequency [KHz]
Load Current [A]
SGH30N60RUFD Rev. B1
SGH30N60RUFD
©2002 Fairchild Semiconductor Corporation
15 30 45 60
100
1000
Tf
Toff
Toff
Tf
Comm o n E mitter
VGE = ±15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
Switching Time [ns]
Collector Current, IC [A]
Fig 7. Capacitance Characteristics Fig 8. Turn-O n Ch ar ac teristics vs.
Gate Resistance
Fig 9 . Turn-Off C haracte ri stics v s.
Gate Resistance Fig 10. S witching Los s vs. G ate R esistanc e
Fig 11. Turn-On Characteristics vs.
Collector Current Fig 12. Tur n-Of f Ch ar act er i st ic s vs .
Collector Current
110
0
500
1000
1500
2000
2500
3000
3500
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
110100
10
100
1000 Common Emitter
VCC = 300V, VGE = ±15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------ Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
110100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
Swi t chin g Time [ n s]
Gate Resistance, RG [Ω]
110100
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
Switching Loss [uJ]
Gate Resistance, RG [ Ω]
15 30 45 60
10
100
1000
Ton
Tr
Com m o n E m it t er
VGE = ±15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
Switching Time [ns]
Collector Curre nt, I C [A]
SGH30N60RUFD Rev. B1
SGH30N60RUFD
©2002 Fairchild Semiconductor Corporation
Fig 14. Gate C harge C har acterist i cs
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 17. Tra nsient Thermal Imped anc e of IGBT
Fig 13. Sw itching Los s vs. Co l lect or Current
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Thermal Resp onse, Zthjc [℃/W]
Rectangular Pulse Duration [sec]
15 30 45 60
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
VGE = ±15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
Swi t chin g Lo ss [uJ]
Collector Curre nt, I C [A]
0 20406080100
0
3
6
9
12
15
200 V
300 V
VCC = 10 0 V
Common Emitter
RL = 10Ω
TC = 25℃
Gate - Emitter Voltage, V
GE [ V ]
Gate Charge, Qg [ nC ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
0.3 1 10 100 1000
0.1
1
10
100
200
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearl y wit h i ncrea se
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (C on ti nuous )
IC MAX. (P ul s e d)
Collector Current, I
C [A]
Collector-Emitter Voltage, VCE [V]
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 20V, TC = 100℃
Collector C urrent, I
C [A]
Collector-Emitter Voltage, VCE [V]
SGH30N60RUFD Rev. B1
SGH30N60RUFD
©2002 Fairchild Semiconductor Corporation
Fig 19. Rever se R ecovery C ur re ntFig 18. Forward Characteristics
Fig 20. Stored C harge Fig 21. Reverse Recovery Time
1
10
100
0123
TC = 25℃ ━━
TC = 100℃ -- --- -
Forward Voltage Drop, VFM [V]
Forward Current, I
F [A]
100 1000
1
10
100 VR = 200V
IF = 25A
TC = 25℃ ━━
TC = 100℃ ------
Reverse Recovery Current, I
rr [A]
di/dt [A/us]
100 1000
0
200
400
600
800
1000 VR = 200V
IF = 25A
TC = 25℃ ━━
TC = 100℃ ------
Stored Recovery Charge, Q
rr [nC]
di/dt [A / us ]
100 1000
20
40
60
80
100
120 VR = 200V
IF = 25A
TC = 25℃ ━━
TC = 100℃ ------
Reverce Recovery Time, t
rr [ns]
di/dt [A/us ]
©2002 Fairchild Semiconductor Corporation SGH30N60RUFD Rev. B1
SGH30N60RUFD
Mechanical Dimensions
Dimensions in Millimeters
TO-3PN
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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