DSA 50 C 100 QB V RRM = 100 V I FAV = 2x 25 A V F = 0.72 V Schottky Diode Gen High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DSA 50 C 100 QB Backside: cathode Features / Advantages: Applications: Package: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Housing: TO-3P Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current rIndustry standard outline r compatible with TO-247 rEpoxy meets UL 94V-0 rRoHS compliant Ratings VF forward voltage min. 100 V VR = 100 V 0.45 mA VR = 100 V TVJ = 125 C 5 mA TVJ = 25 C 0.90 V 1.07 V 0.72 V 0.90 V TC = 155 C 25 A TVJ = 175 C 0.45 V IF = 25 A IF = 50 A IF = 25 A IF = 50 A TVJ = 125 C I FAV average forward current threshold voltage rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current t = 10 ms (50 Hz), sine CJ junction capacitance VR = 12 V; f = 1 MHz TVJ = 25 C (c) 2010 IXYS all rights reserved Unit max. TVJ = 25 C TVJ = 25 C VF0 rectangular d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. 7.3 m 0.95 K/W 175 C TC = 25 C 160 W TVJ = 45C 230 A -55 Data according to IEC 60747and per diode unless otherwise specified 289 pF 20101129a DSA 50 C 100 QB Ratings Symbol Definition min. Conditions I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 50 0.25 -55 Weight A K/W 150 C 5 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N I RMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo D S A 50 C 100 QB IXYS Part No. Date Code Order Code abcd Ordering Standard Part Name DSA 50 C 100 QB Similar Part DSA50C100HB DSA60C100PB IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Marking on Product DSA50C100QB Package TO-247AD (3) TO-220AB (3) Delivering Mode Tube = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) Base Qty Code Key 30 504033 Voltage class 100 100 Data according to IEC 60747and per diode unless otherwise specified 20101129a DSA 50 C 100 QB Outlines TO-3P IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20101129a DSA 50 C 100 QB 70 10 60 1 150C 50 IF 40 [A] 30 800 125C IR CT 600 0.1 100C [mA] 10 75C [pF] 400 0.01 TVJ = 150C 125C 25C 20 50C TVJ = 25C 25C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 200 0.0001 0 0 20 40 60 80 Fig. 1 Maximum forward voltage drop characteristics 0 20 70 70 60 40 60 80 100 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR 80 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR DC 60 50 d = 0.5 50 P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 40 [A] 100 VR [V] VF [V] IF(AV) 1000 TVJ=175C [W] 30 30 20 20 10 10 0 0 0 50 100 150 200 0 10 20 TC [C] 30 40 50 60 70 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1.0 0.8 0.6 ZthJC Single Pulse 0.4 Rthi [K/W] 0.026 0.172 0.227 0.435 0.09 [K/W] 0.2 0.0 0.0001 0.001 0.01 0.1 1 ti [s] 0.0005 0.011 0.072 0.34 1.5 Note: All curves are per diode 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20101129a