IRF1503PBF - INFINEON TECHNOLOGIES AG

HEXFET® Power MOSFET

This design of HEXFET® Power MOSFETs utilizes

the lastest processing techniques to achieve extremely

low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating. These combine

to make this design an extremely efficient and reliable

device for use in a wide variety of applications.

VDSS = 30V

RDS(on) = 3.3mΩ

ID = 75A

Description

07/14/10

www.irf.com 1

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Features

IRF1503PbF

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 0.45

RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

RθJA Junction-to-Ambient ––– 62

Thermal Resistance

TO-220AB

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 240

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 170 A

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75

IDM Pulsed Drain Current 960

PD @TC = 25°C Power Dissipation 330 W

Linear Derating Factor 2.2 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy510 mJ

EAS (tested) Single Pulse Avalanche Energy Tested Value980

IAR Avalanche CurrentSee Fig.12a, 12b, 15, 16 A

EAR Repetitive Avalanche EnergymJ

TJOperating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Absolute Maximum Ratings

PD-95438A

Typical Applications

Industrial Motor Drive

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on) Static Drain-to-Source On-Resistance ––– 2.6 3.3 mΩVGS = 10V, ID = 140A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA

gfs Forward Transconductance 75 ––– ––– S VDS = 25V, ID = 140A

––– ––– 20 µA VDS = 30V, VGS = 0V

––– ––– 250 VDS = 30V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V

QgTotal Gate Charge ––– 130 200 ID = 140A

Qgs Gate-to-Source Charge ––– 36 54 nC VDS = 24V

Qgd Gate-to-Drain ("Miller") Charge ––– 41 62 VGS = 10V

td(on) Turn-On Delay Time ––– 17 ––– VDD = 15V

trRise Time ––– 130 ––– ID = 140A

td(off) Turn-Off Delay Time ––– 59 ––– RG = 2.5Ω

tfFall Time ––– 48 ––– VGS = 10V 

Between lead,

––– ––– 6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance ––– 5730 ––– VGS = 0V

Coss Output Capacitance ––– 2250 ––– pF VDS = 25V

Crss Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5

Coss Output Capacitance ––– 7580 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 2290 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 3420 ––– VGS = 0V, VDS = 0V to 24V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

LDInternal Drain Inductance

LSInternal Source Inductance ––– –––

IGSS

5.0

IDSS Drain-to-Source Leakage Current

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V 

trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 140A, VDD = 15V

Qrr Reverse RecoveryCharge ––– 110 170 nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

240

960

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Starting TJ = 25°C, L = 0.049mH

RG = 25Ω, IAS = 140A. (See Figure 12).

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Notes:

 Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS .

 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

 This value determined from sample failure population. 100%

tested to this value in production.

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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0. 1 110 100

VDS, Drai n-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 1 5V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 25V

20µs PULSE WIDTH

0 40 80 120 160 200

ID, Drain-to-Source Current (A)

120

160

200

Gfs, Forward Transconductance (S)

TJ = 25°C

TJ = 175°C

VDS = 25V

20µs PULSE WIDTH

Fig 4. Typical Forward Transconductance

Vs. Drain Current

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.0 0.4 0.8 1.2 1.6 2.0

VSD, Source-toDrain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

0 40 80 120 160 200

QG Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

VDS= 24V

ID= 140A

1 10 100

VDS , Drain-toSource Voltage (V)

100

1000

10000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

110 100

VDS, Drain-to-Source Voltage (V)

2000

4000

6000

8000

10000

C, Capacitance (pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C gs + C gd , C ds

SHORTED

Crss = C

Coss = C

ds + C

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJC C

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

120

160

200

240

T , Case Temperature ( C)

I , Drain Current (A)

LIMITED BY PACKAGE

Fig 10. Normalized On-Resistance

Vs. Temperature

-60 -40 -20 020 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

240A

IRF1503PbF

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25 50 75 100 125 150 175

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

59A

100A

140A

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 14. Threshold Voltage Vs. Temperature

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

-75 -50 -25 025 50 75 100 125 150 175 200

TJ , Temperature ( °C )

1.0

2.0

3.0

4.0

VGS(th) Gate threshold Voltage (V)

ID = 250µA

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Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche Energy

Vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

4. PD (ave) = Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed

Tjmax (assumed as 25°C in Figure 15, 16).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

100

1000

10000

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs

avalanche pulsewidth, tav

assuming ∆Tj = 25°C due to

avalanche losses. Note: In no

case should Tj be allowed to

exceed Tjmax

0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

200

300

400

500

600

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 50% Duty Cycle

ID = 140A

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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P. W .

Period

* VGS = 5V for Logic Level Devices







RGVDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



VDS

90%

10%

VGS

d(on)

d(off)

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

10V

VDD

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 07/2010

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-220AB package is not recommended for Surface Mount Application.

TO-220AB Part Marking Information

TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

INT E RNAT IONAL PART NUMBER

RE CTIF IE R

LOT CODE

AS S E MB L Y

LOGO

YEAR 0 = 2000

DATE CODE

WEE K 19

LINE C

LOT CODE 1789

E XAMP LE: T HIS IS AN IRF1010

Note: "P" in ass embly line pos ition

indicates "L ead - F ree"

IN T HE ASS EMB L Y LINE "C"

AS S EMB LE D ON WW 19, 2000

Notes:

1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/

2. For the most current drawing please refer to IR website at http://www.irf.com/package/