© 2010 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20100709a
VUO 70-16NO7
VRSM VRRM Types
V V
1700 1600 VUO 70-16NO7
Symbol Conditions Maximum Ratings
IdAV
TC = 100°C, module 70 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 550 A
VR = 0 t = 8.3 ms (60 Hz), sine 600 A
TVJ = TVJM t = 10 ms (50 Hz), sine 500 A
VR = 0 t = 8.3 ms (60 Hz), sine 550 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 1520 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1520 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 1250 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ±15% Nm
(10-32 UNF) 44 ±15% lb.in.
Weight typ. 110 g
IdAV = 70 A
VRRM = 1600 V
Symbol Conditions Characteristic Values
IRVR= VRRM TVJ = 25°C < 0.5 mA
VR= VRRM TVJ = TVJM <10mA
VFIF= 150 A TVJ = 25°C < 1.7 V
VT0 For power-loss calculations only 0.8 V
rT8mΩ
RthJC per diode; DC current 1.45 K/W
per module 0.242 K/W
RthJH per diode, DC current 1.9 K/W
per module 0.317 K/W
dSCreeping distance on surface 16.1 mm
dACreepage distance in air 7.5 mm
aMax. allowable acceleration 50 m/s2
Features
• Package with copper base plate
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• ¼" fast-on power terminals
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode unless otherwise stated
for resistive load at bridge output
Three Phase
Rectifier Bridge
E
D
C
B
A
© 2010 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions. 20100709a
VUO 70-16NO7
11.5
0
5
10
15
20
25
30
IF
VF
A
V
T=150°C
T=25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
550 500
I
------
I
FS M
F( OV)
0 V
RRM
1/ 2 V
RRM
1 V
RRM
604020
0
25
50
75
100
125
150
175
200
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
2.76
1.26
0.76
0.51
0.38 0.26 = RTHCA [K/W]
IFAVM [A] Tamb [K]
050100150
[W]
PVTOT
PSD 41
50 100 150 200
0
20
40
60
80 DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C )
C
I
dAV
[A]
0.01 0.1 110
1
2
3
K/W
Zth
t[s]
ZthJK
ZthJC
2 4 6 1
0
TVJ=45°C
TVJ=150°C
t [ms ]
1
10
10
10
2
3
4
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig. 3 I2dt versus time (1-10ms)
per diode or thyristor
Fig. 4 Power dissipation versus direct output current
and ambient temperature
Fig.5 Maximum forward current
at case temperature
Fig. 6 Transient thermal impedance per diode/thyristor, calculated
