1/10
www.dynexsemi.com
DCR1020SF
FEATURES
■Double Side Cooling
■High Surge Capability
APPLICATIONS
■High Power Drives
■High Voltage Power Supplies
■DC Motor Control
■Welding
■Battery Chargers
VOLTAGE RATINGS
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1020SF63
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
VDRM 6500V
IT(AV) 640A
ITSM 10700A
dVdt 1000V/µs
dI/dt 100A/µs
DCR1020SF
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4245-4.0 DS4245-5.0 July 2001
6500
6400
6300
6200
6100
6000
DCR1020SF65
DCR1020SF64
DCR1020SF63
DCR1020SF62
DCR1020SF61
DCR1020SF60
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Type Number Repetitive Peak
Voltages
VDRM VRRM
V
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
2/10
www.dynexsemi.com
DCR1020SF
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol Parameter Conditions
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
Single Side Cooled (Anode side)
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
UnitsMax.
Half wave resistive load 515 A
- 809 A
- 765 A
Half wave resistive load 377 A
- 592 A
- 530 A
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol Parameter Conditions
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
Single Side Cooled (Anode side)
IT(AV) Mean on-state current
IT(RMS) RMS value
ITContinuous (direct) on-state current
UnitsMax.
Half wave resistive load 640 A
- 1005 A
- 967 A
Half wave resistive load 473 A
- 742 A
- 682 A
3/10
www.dynexsemi.com
DCR1020SF
SURGE RATINGS
Conditions
10ms half sine; Tcase = 125oC
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 125oC
VR = 0
Max. Units
Symbol Parameter
ITSM Surge (non-repetitive) on-state current
I2tI
2t for fusing
ITSM Surge (non-repetitive) on-state current
I2tI2t for fusing 0.562 x 106A2s
10.7 kA
0.36 x 106A2s
8.5 kA
THERMAL AND MECHANICAL DATA
dc
Conditions Min. Max. Units
oC/W- 0.038Anode dc
Clamping force 19.5kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
0.004
Double side -
125 oC
Tvj Virtual junction temperature
Tstg Storage temperature range
Reverse (blocking)
Single side
Thermal resistance - junction to case
Rth(j-c) Single side cooled
Symbol Parameter
Clamping force 18.0 22.0 kN
–55 125 oC
-
On-state (conducting) - 135 oC
- 0.008 oC/W
oC/W
Cathode dc - 0.052 oC/W
Double side cooled - 0.022 oC/W
-
4/10
www.dynexsemi.com
DCR1020SF
DYNAMIC CHARACTERISTICS
VTM
ParameterSymbol Conditions
Maximum on-state voltage At 1800A peak, Tcase = 25oC
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC
From 67% VDRM to 1000A
Gate source 30V, 15Ω
tr ≤ 0.5µs. Tj = 125oC.
dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.
Typ. Max. Units
- 3.6 V
- 150 mA
- 1000 V/µs
Repetitive 50Hz -30A/µs
Non-repetitive - 100 A/µs
Rate of rise of on-state current
dI/dt
VT(TO) Threshold voltage At Tvj = 125oC
rTOn-state slope resistance At Tvj = 125oC
tgd Delay time
1.2-V
- 1.92 mΩ
0.5 1.5 µs
VD = 67% VDRM, Gate source 30V, 15Ω
Rise time 0.5µs, Tj = 25oC
IT = 1000A, tp = 1ms, Tj = 125˚C,
VRM = 100V, dIRR/dt = 10A/µs,
VDR = 67% VDRM, dVDR/dt = 25V/µsµs-600Turn-off timetq
ILLatching current Tj = 25oC, VD = 10V
IHHolding current Tj = 25oC
- 600 mA
- 200 mA
GATE TRIGGER CHARACTERISTICS AND RATINGS
VDRM = 5V, Tcase = 25oC
ConditionsParameterSymbol
VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC
IGT Gate trigger current
VGD Gate non-trigger voltage At VDRM Tcase = 125oC
VFGM Peak forward gate voltage Anode positive with respect to cathode
VFGN Peak forward gate voltage Anode negative with respect to cathode
VRGM Peak reverse gate voltage
IFGM Peak forward gate current Anode positive with respect to cathode
PG(M) Peak gate power See Gate Characteristics curve/table
PG(AV) Mean gate power
- 3.0 V
- 300 mA
- 0.25 V
-30V
- 0.25 V
-5V
-10A
- 150 W
-5W
Typ. Max. Units
5/10
www.dynexsemi.com
DCR1020SF
CURVES
VTM Equation:-
VTM = A + Bln (IT) + C.IT+D.√IT
Where A = 0.25863
B = 0.322589
C = 0.002564
D = -0.061059
these values are valid for Tj = 125˚C for IT 100A to 2000A
Fig.2 Maximum (limit) on-state characteristics Fig.3 Maximum (limit) on-state characteristics
0
200
400
600
800
1000
1200
1400
1600
1800
2000
123456
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
T
j
= 125˚C
Instantaneous on-state voltage, V
T
- (V)
Instantaneous on-state current, I
T
- (A)
800
700
600
500
400
300
200
100
0
1.0 3.02.52.01.5
T
j
= 125˚C
6/10
www.dynexsemi.com
DCR1020SF
Fig.4 Sine wave power dissipation curves Fig.5 Sine wave power dissipation curves
Fig.6 Square wave power dissipation curves Fig.7 Square wave power dissipation curves
Mean on-state current, IT(AV) - (A)
Power loss - (W)
180˚
120˚
90˚
60˚
30˚
15˚
0 100 200 300 400 500 600 700
0
500
1000
1500
2000
2500
Conduction angle
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
180˚
120˚
90˚
60˚
30˚
15˚
0 50 100 150 200 250 300 350
0
100
200
300
400
500
600
700
800
Conduction angle
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
D.C.
180˚
120˚
90˚
60˚
30˚
0 200 400 600 800 1000
0
500
1000
1500
2000
2500
Conduction angle
Mean on-state current, I
T(AV)
- (A)
Power loss - (W)
D.C.
180˚
120˚
90˚
60˚
30˚
0100 200 300 400 500
0
100
200
300
400
500
600
700
800
Conduction angle
7/10
www.dynexsemi.com
DCR1020SF
Fig.8 Gate characteristics
Fig.9 Gate characteristics
Gate trigger current, I
GT
- (A)
Gate trigger voltage, V
GT
- (V)
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
j
= 125˚C
T
j
= 25˚C
T
j
= -40˚C
Preferred gate drive area
Upper limit
Lower limit
Pulse Width
µs
100
200
500
1000
10000
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Frequency Hz
Table gives pulse power P
GM
in Watts
Gate trigger current, I
GT
- (A)
Gate trigger voltage, V
GT
- (V)
012345678910
0
5
10
15
20
25 Upper Limit
Lower Limit
5W
10W
20W
50W
100W
8/10
www.dynexsemi.com
DCR1020SF
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1101234550
ms Cycles at 50Hz
Duration
0
0.1
I
2
t value - (A
2
s x 10
6
)
I
2
t
I
2
t = Î
2
x t
2
0.2
25
0.3
10 20 30
0.4
Fig.10 Stored charge
Fig.12 Surge (non-repetitive) on-state current vs time
(with 50% VRRM @ Tcase = 125˚C)
Fig.11 Reverse recovery current
10000
1000
100
Total stored charge, Q
RA3
- (µC)
0.1 1.0 10
Rate of decay of on-state current, dI/dt - (A/µs) 100
Max
Min
Conditions:
T
j
= 125˚C
I
T
= 550A
V
R
= 100V
I
RR
Q
RA3
I
T
dI/dt 25% I
RR
1000
100
10
Peak reverse recovery current, I
RR
- (A)
0.1 1.0 10
Rate of decay of on-state current, dI/dt - (A/µs) 100
Max
Min
Conditions:
T
j
= 125˚C
I
T
= 550A
V
R
= 100V
Fig.13 Transient thermal impedance - junction to case
0.1
0.01
0.001
Thermal Impedance - junction to case - (˚C/W)
0.001 0.01 0.1 1.0 10
Time - (s)
Anode side cooled
Double side
cooled
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
9/10
www.dynexsemi.com
DCR1020SF
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6x2.0 deep (in both electrodes)
Ø48 nom
27.0
25.4
Ø1.5
Cathode
Gate
Anode
Ø48 nom
Ø76 max
Nominal weight: 450g
Clamping force: 19.5kN ± 10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: F
Cathode tab
10/10
www.dynexsemi.com
DCR1020SF
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4245-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
