DCR1020SF DCR1020SF Phase Control Thyristor Advance Information Replaces January 2000 version, DS4245-4.0 DS4245-5.0 July 2001 FEATURES KEY PARAMETERS Double Side Cooling VDRM 6500V High Surge Capability IT(AV) 640A ITSM APPLICATIONS 10700A dVdt 1000V/s High Power Drives dI/dt 100A/s High Voltage Power Supplies DC Motor Control Welding Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V DCR1020SF65 6500 DCR1020SF64 6400 DCR1020SF63 6300 DCR1020SF62 6200 DCR1020SF61 6100 DCR1020SF60 6000 Lower voltage grades available. Conditions Tvj = 0 to 125C, IDRM = IRRM = 150mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1020SF63 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/10 www.dynexsemi.com DCR1020SF CURRENT RATINGS Tcase = 60C unless stated otherwise. Symbol Parameter Conditions Max. Units 640 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 1005 A Continuous (direct) on-state current - 967 A 473 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 742 A Continuous (direct) on-state current - 682 A Conditions Max. Units 515 A IT Half wave resistive load CURRENT RATINGS Tcase = 80C unless stated otherwise. Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 809 A Continuous (direct) on-state current - 765 A 377 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 592 A Continuous (direct) on-state current - 530 A IT Half wave resistive load 2/10 www.dynexsemi.com DCR1020SF SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 8.5 kA VR = 50% VRRM - 1/4 sine 0.36 x 106 A2s 10ms half sine; Tcase = 125oC 10.7 kA VR = 0 0.562 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.022 o Anode dc - 0.038 o Cathode dc - 0.052 o Double side - 0.004 o Single side - 0.008 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range -55 125 o Clamping force 18.0 22.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 19.5kN with mounting compound C/W C/W C/W C Virtual junction temperature C C kN 3/10 www.dynexsemi.com DCR1020SF DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Maximum on-state voltage At 1800A peak, Tcase = 25oC - 3.6 V Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 150 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. - 1000 V/s - 30 A/s Rate of rise of on-state current From 67% VDRM to 1000A Gate source 30V, 15 tr 0.5s. Tj = 125oC. Repetitive 50Hz dI/dt Non-repetitive - 100 A/s VTM IRRM/IDRM Threshold voltage At Tvj = 125oC - 1.2 V rT On-state slope resistance At Tvj = 125oC - 1.92 m tgd Delay time VD = 67% VDRM, Gate source 30V, 15 Rise time 0.5s, Tj = 25oC 0.5 1.5 s tq Turn-off time VRM = 100V, dIRR/dt = 10A/s, VDR = 67% VDRM, dVDR/dt = 25V/s 600 - s IL Latching current Tj = 25oC, VD = 10V - 600 mA IH Holding current Tj = 25oC - 200 mA Typ. Max. Units VT(TO) IT = 1000A, tp = 1ms, Tj = 125C, GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC - 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC - 300 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC - 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode - 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode - 0.25 V VRGM Peak reverse gate voltage - 5 V IFGM Peak forward gate current Anode positive with respect to cathode - 10 A PG(M) Peak gate power See Gate Characteristics curve/table - 150 W PG(AV) Mean gate power - 5 W 4/10 www.dynexsemi.com DCR1020SF CURVES 2000 800 Tj = 125C Tj = 125C 1800 700 1600 Instantaneous on-state current, IT - (A) Instantaneous on-state current, IT - (A) 600 1400 500 1200 1000 400 800 300 600 200 400 100 200 0 1 2 3 4 5 Instantaneous on-state voltage, VT - (V) 6 0 1.0 Fig.2 Maximum (limit) on-state characteristics VTM Equation:VTM = A + Bln (IT) + C.IT+D.IT 1.5 2.0 2.5 Instantaneous on-state voltage, VT - (V) 3.0 Fig.3 Maximum (limit) on-state characteristics Where A = 0.25863 B = 0.322589 C = 0.002564 D = -0.061059 these values are valid for Tj = 125C for IT 100A to 2000A 5/10 www.dynexsemi.com DCR1020SF 800 2500 700 2000 Power loss - (W) Power loss - (W) 600 1500 1000 Conduction angle 180 120 90 60 30 15 500 0 0 100 200 300 400 500 600 Mean on-state current, IT(AV) - (A) 500 400 300 Conduction angle 180 120 90 60 30 15 200 100 0 0 700 Fig.4 Sine wave power dissipation curves 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 350 Fig.5 Sine wave power dissipation curves 2500 800 700 2000 Power loss - (W) Power loss - (W) 600 1500 1000 Conduction angle D.C. 180 120 90 60 30 500 0 0 200 400 600 800 Mean on-state current, IT(AV) - (A) Fig.6 Square wave power dissipation curves 1000 500 400 300 Conduction angle D.C. 180 120 90 60 30 200 100 0 0 100 200 300 400 Mean on-state current, IT(AV) - (A) 500 Fig.7 Square wave power dissipation curves 6/10 www.dynexsemi.com DCR1020SF 10 Upper limit Lower limit 9 Gate trigger voltage, VGT - (V) 8 7 6 Preferred gate drive area Table gives pulse power PGM in Watts Pulse Width 5 Tj = -40C 4 Tj = 25C 3 Tj = 125C s 100 200 500 1000 10000 Frequency Hz 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate trigger current, IGT - (A) 0.7 0.8 0.9 1.0 7 8 9 10 Fig.8 Gate characteristics 25 Upper Limit Lower Limit 5W 10W 20W 50W 100W Gate trigger voltage, VGT - (V) 20 15 10 5 0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) Fig.9 Gate characteristics 7/10 www.dynexsemi.com DCR1020SF 1000 Conditions: Tj = 125C IT = 550A VR = 100V Peak reverse recovery current, IRR - (A) Total stored charge, QRA3 - (C) 10000 Max 1000 Min IT QRA3 Max 1.0 10 Rate of decay of on-state current, dI/dt - (A/s) 10 0.1 100 Fig.10 Stored charge 15 0.3 I2t 10 0.2 5 0.1 ms 1 2 3 45 10 0 20 30 50 Cycles at 50Hz Duration Fig.12 Surge (non-repetitive) on-state current vs time (with 50% VRRM @ Tcase = 125C) Thermal Impedance - junction to case - (C/W) 0.4 I2t value - (A2s x 106) Peak half sine wave on-state current - (kA) 20 10 100 0.1 I2t = I2 x t 2 1 1.0 10 Rate of decay of on-state current, dI/dt - (A/s) Fig.11 Reverse recovery current 25 0 Min 100 25% IRR IRR dI/dt 100 0.1 Conditions: Tj = 125C IT = 550A VR = 100V Anode side cooled Double side cooled 0.01 0.001 0.001 Conduction d.c. Halfwave 3 phase 120 6 phase 60 0.01 Effective thermal resistance Junction to case C/W Double side 0.022 0.024 0.026 0.027 0.1 Time - (s) Anode side 0.038 0.040 0.042 0.043 1.0 10 Fig.13 Transient thermal impedance - junction to case 8/10 www.dynexsemi.com DCR1020SF PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole O3.6x2.0 deep (in both electrodes) Cathode tab Cathode O76 max O48 nom 27.0 25.4 O1.5 Gate O48 nom Anode Nominal weight: 450g Clamping force: 19.5kN 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F 9/10 www.dynexsemi.com DCR1020SF POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4245-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 www.dynexsemi.com