© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 9
1Publication Order Number:
BAS70−04LT1/D
BAS70-04LT1G
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
•Extremely Fast Switching Speed
•Low Forward Voltage
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR70 V
Non−Repetitive Peak Forward
Surge Current (t ≤ 1.0 s)
IFSM 100 mA
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
225
1.8
mW
mW/°C
Operating Junction and Storage
Temperature Range
TJ, Tstg −55 to +150 °C
Thermal Resistance
Junction−to−Ambient
RqJA 508
(Note 1)
311
(Note 2)
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ minimum pad.
2. FR−4 @ 1.0 x 1.0 in pad.
70 VOLTS SCHOTTKY
BARRIER DIODE
Device Package Shipping†
ORDERING INFORMATION
SOT−23
(TO−236AB)
CASE 318
ANODE
1
CATHODE
2
3
CATHODE/ANODE
1
2
3
MARKING DIAGRAM
CG = Specific Device Code
M = Date Code*
G= Pb−Free Package
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†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
BAS70−04LT1G SOT−23
(Pb−Free)
3000 / Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
CG M G
G
BAS70−04LT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
Reverse Breakdown Voltage (IR = 10 μA) V(BR)R 70 −V
Total Capacitance (VR = 0 V, f = 1.0 MHz) CT−2.0 pF
Reverse Leakage (VR = 50 V)
(VR = 70 V)
IR−
−
0.1
10
μA
Forward Voltage (IF = 1.0 mA) VF−410 mV
Forward Voltage (IF = 10 mA) VF−750 mV
Forward Voltage (IF = 15 mA) VF−1.0 V
100
0 0.1
VF
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5.0 10 15 20 50
1.4
0
VR, REVERSE VOLTAGE (VOLTS)
1.2
0.4
0.2
0
CT, CAPACITANCE (pF)
5.0 10 15 50
IF, FORWARD CURRENT (mA)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40°C
25°C
TA = 150°C
25°C
IR, REVERSE CURRENT (μA)
1.0
-55°C
125°C
150°C
100
2520
0.6
0.8
1.0
0.6 0.7
125°C
85°C
30 35 40 45
25 30 35 40 45
0.8 0.9
BAS70−04LT1G
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3
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BAS70−04LT1/D
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