BA157-E3/73 - Vishay [General Semiconductor]

Document Number: 88536 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 26-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

Fast Switching Plastic Rectifier

BA157 thru BA159

Vishay General Semiconductor

FEATURES

• Fast switching for high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for consumer

and telecommunication.

Note

• These devices are not AEC-Q101 qualified.

MECHANICAL DATA

Case: DO-204AL, molded epoxy body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 1.0 A

VRRM 400 V to 1000 V

IFSM 20 A

trr 150 ns, 250 ns, 500 ns

IR5.0 μA

VF1.3 V

TJ max. 125 °C

DO-204AL (DO-41)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BA157 BA158 BA159D BA159 UNIT

Maximum repetitive peak reverse voltage VRRM 400 600 800 1000 V

Maximum RMS voltage VRMS 280 420 560 700 V

Maximum DC blocking voltage VDC 400 600 800 1000 V

Maximum average forward rectified current

0.375" (9.5 mm) lead length at TA = 55 °C IF(AV) 1.0 A

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load IFSM 20 A

Maximum operation junction temperature TJ- 65 to + 125 °C

Maximum storage temperature TSTG - 65 to + 150 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88536

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 26-Oct-09

BA157 thru BA159

Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Characteristics

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL BA157 BA158 BA159D BA159 UNIT

Maximum instantaneous

forward voltage 1.0 A VF1.3 V

Maximum DC reverse current

at rated DC blocking voltage TA = 25 °C IR5.0 μA

Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 150 250 500 ns

Typical junction capacitance 4.0 V, 1 MHz CJ12 pF

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

BA158-E3/54 0.33 54 5500 13" diameter paper tape and reel

BA158-E3/73 0.33 73 3000 Ammo pack packaging

Ambient Temperature (°C)

Average Forward Current (A)

025 50 75 100 125 150 175

0.2

0.4

0.6

0.8

1.0

0.375" (9.5 mm) Lead Length

60 Hz

Resistive or Inductive Load

Peak Forward Surge Current (A)

110 100

Number of Cycles at 60 Hz

= 55 °C

8.3 ms Single Half Sine-Wave

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

0.4 0.6 1.0 1.2 1.4 1.6 2.0

0.01

0.1

100

0.8 1.8

= 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

Percent of Rated Peak Reverse Voltage (%)

20 60 80 100

0.01

100

0.1

Instantaneous Reverse Current (μA)

TJ = 25 °C

TJ = 100 °C

Document Number: 88536 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 26-Oct-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

BA157 thru BA159

Vishay General Semiconductor

Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Reverse Voltage (V)

Junction Capacitance (pF)

0.1 110 100

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

0.01 0.1 110 100

0.1

100

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

DO-204AL (DO-41)

0.107 (2.7)

0.080 (2.0)

DIA.

0.034 (0.86)

0.028 (0.71)

DIA.

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160 (4.1)

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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